光电倍增管在磷酸液声致发光实验中的应用

对不同厚度液体进行光强测量,深入探索空化气泡的运动,研究发光机理很有意义。用超声激励法在磷酸液体中实现多泡声致发光,研究不同共振频率下发光的特点。利用光电倍增管多次测量发光强度相互比较,结果是在液体厚度10 cm、驱动频率f=21.061kHz和f=20.316kHz时,周期性较好为50μs,液体通过漩涡集中气泡可以使更多气泡发光;在液体厚度3 mm、驱动频率f=17.91kHz和f=19kHz时,周期性很好为25μs;且光信号都较强。结论是磷酸中声致发光强度、周期与液体厚度、驱动频率密切相关。本文以磷酸液多泡声致发光实验研究为基础,从内部和外部原理来出发,详细介绍了光电倍增管在多泡声致发光光强测量中的实用,为今后研究者提供了一些经验。根据实验过程中遇到的一些实际问题提出了建议和改善意见。     

Preliminary results for the design,fabrication,and performance of a backside-illuminated avalanche drift detector

The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.     

LED毫伏级待测电动势实验仪的设计及其稳定性的研究

为了满足电位差计实验对毫伏级待测电动势需求,设计了LED毫伏级待测电动势实验仪,并对其稳定性进行了研究.待测电动势实验仪是通过光电转换来实现的,输出的毫伏级电动势在电位差计实验仪的各个测量点都能稳定,能够满足箱式电位差计测量范围和精度要求,是比较理想的箱式电位差计实验配套仪器,能够大大提高学生的实验效率和教师对实验设计的选择性,实验效果良好.     

第八届全国暨华人有机分子和聚合物发光与光电特性学术会议(第一轮通知)

"全国暨华人有机分子和聚合物发光与光电特性学术会议"是每两年举行一次的全国性专业学术活动,旨在为从事有机/聚合物发光、激光、光伏材料及器件等研究和应用领域的专家、学者提供一个进行学术与信息交流的平台,同时也是对近两年来在上述领域所取得的研究成果和技术进步进行一次全面、集中的检阅。     

硅太阳电池表面多孔硅的制备与作用

利用电化学方法在硅太阳能电池的金字塔上面刻蚀一层多孔硅,研究多孔硅对硅表面反射率、光电转换量子效率的影响以及氧化对不同波长的光电转换量子效率的影响。研究发现氢氟酸浓度对反射率没有明显的影响,而电化学反应时间可以调制反射率最低波长点,最终获得综合反射率低至2%的优质减反效果。多孔硅的存在使得300～500 nm的光电转换量子效率降低,500 nm以上长波的光电转换量子效率增加。氧气氛围中的快速退火能够有效降低少数载流子的表面复合,从而增加短波段的光电转换量子效率。     

紫外光响应杂化太阳能电池

太阳能是一种取之不尽、用之不竭的清洁能源,太阳能电池是高效开发利用太阳能的关键。目前所开发的太阳能电池主要利用可见光,而光子能量高的紫外光很少得到利用。由于紫外光响应的太阳能电池目前还未见报道,开发紫外光响应的太阳能电池对光伏电池和光电器件的理论研究和实际应用都具有重要意义。     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

半绝缘GaAs的欧姆接触电极材料Ag/Co掺杂的非晶碳膜制备与检测

稳定的欧姆接触对半导体器件的正常工作起到至关重要的作用.目前市场上主要采用金/金锗镍合金作为n型GaAs的电极材料,工艺复杂,成本高昂.本文研究了一种新型的、廉价的适用于半绝缘GaAs的欧姆接触电极材料Ag/Co掺杂的非晶碳膜及其制备过程,以便于读者对半导体器件的制备工艺和流程有所了解.     

半绝缘GaAs光电导开关的超线性时间响应分析

报道了用1064nm激光脉冲触发电极间隙为3mm的横向半绝缘GaAs 光导开关的实验结果.对半绝缘GaAs光电导开关的超线性时间响应特性做了分析,表明半绝缘GaAs材料EL2能级对电子和空穴的俘获截面有较大的差异,这种较大的差异造成开关对激光脉冲的超快响应.     

增量式轴角编码器的电子细分及零位处理

使用单片机对增量式光电轴角编码器产生的叠栅条纹信号进行计数和电子细分,便可将轴的机械转动模拟量转换成数字量;加上固定参考零位后,可使编码器具有"记忆"功能,因此对如何解决零位技术问题做了详细分析说明,并给出了实际解决方案.