某些厚透镜和透镜系统的初级特性

描述某些厚透镜和透镜系统的初级特性。其光轴上的一些点与节点和主点有类似的特性。对这些点进行了分析,并叙述了它们的一些作用。     

一种新型的二元光学器件——多位相光束分束器的制作

本文报道了用于多光束分束器的反射式16位相值二元光学器件的制作。该二元光学器件把一束光束分成5×5光束阵列。测量的衍射效率为76.16%,接近理论设计值79.68%。该二元光学器件的有效孔径为10mm×10mm。     

Infrared Spectroscopic Analysis of Chrysene and 1.2-Benzanthracence in Wax films

Chrysene and 1.2-benzanthracene are successfully doped in a solid wax film and their vibrational spectra in gooo--400cm^-1 are discussed. The harmonic frequencies and relative intensities of both the molecules observed in the film are compared with theoretical values calculated by the density functional theory （DFT） model as well as with the previous experimental data. The effects on spectra due to change of matrix and some additional bands observed in the wax film are also reported. Excellent agreement in the spectral positions and strengths between the experiments and DFT values are found.     

BRD96N光调制吸收增强现象的实验研究

通过光谱响应特性实验和记录／读出图像实验，研究了基因变异型细菌视紫红质（BR_D96N）分子膜对单色光的光调制特性.发现BR_D96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象，且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程，其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系，分析了560nm—600nm范围内出现图像反转的实验现象. 关键词： 细菌视紫红质D96N分子膜 光谱响应 吸收增强现象 图像反转现象     

近场光学显微技术

本文在介绍近场光学显微镜原理的基础上，对近场光学显微技术进行了一定深度的探讨，并着重研究了纳米级探针的制作和纳米级样品与探针间距的控制这两个近场光学显微技术中的关键问题，说明了近场光学显微探针的工作方式，阐述了近场光学成像的衬度类型，介绍了近场光学显微技术在多个领域的应用。在参考大量国内外最新研究成果的基础上，提出了一些个人的见解。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Gain Characteristics of Er^3＋-Doped Phosphate Glass Fibres

An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er^3＋-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.SdB/cm. The pump threshold is about 50mW at the wavelength of 1534nm, and below 70roW at 1550nm. The gain linewidth of the Er^3＋-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

宽带Ⅱ-Ⅵ族半导体及其低维结构的生长和光学性质研究进展

本文系自1979年以来，宽带Ⅱ-Ⅵ族半导体研究组取得的主要研究成果的简要介绍。取得的主要研究成果可分为如下六个方面：第一，系统地研究了宽带Ⅱ-Ⅵ族半导体在电场激发下的自由激子发射；第二，创造性地提出并实 利用宽带Ⅱ-Ⅵ族超晶格的室温激子效应来实现在蓝绿区快响应的光学双稳的物理思想；第三，深入研究了宽带Ⅱ-Ⅵ族超晶格中的激子行为以及激子与元激发态的相互作用，为利用激子获得有效蓝色自发和受激发射提供物理基础和实验途径；第四，研究了ZnSe基非对称双量子阱和组合超晶格中激子的隧穿以及激子的自发和受激发射；第五，CdSe和ZnSeS自组装量子点的生长及其形成机理；第六，ZnO薄膜的生长及其紫外发射特性。