Yb3+掺杂铝氟磷酸盐玻璃的光谱和激光性能

研究了Yb3 掺杂铝氟磷酸盐 (AFP)玻璃的吸收光谱、荧光光谱 ,测量了Yb3 离子的荧光有效线宽 (Δλeff>5 5nm)以及2 F5 2 能级的荧光寿命 (τmax=2ms)及随掺杂浓度的变化 .应用倒易法计算了Yb3 的发射截面 ,其发射截面可达 0 6 6 82 3pm2 ,且激光增益系数τfσemi达 1 2 89ms.pm2 .评估了Yb3 在AFP玻璃中的激光性能 ,发现其具有较理想的激发态最小粒子数 (0 15 )、饱和抽运强度 (8 3kW cm2 )和最小抽运强度 (1 2 4 5kW cm2 )值及良好的热稳定性 .研究结果表明掺Yb3 氟磷酸盐玻璃是实现高功率超短可调谐激光器的理想增益介质 .     

Nanoporous Structure in Low-Dielectric Films with Positronium Annihilation Lifetime Spectroscopy

We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributions, and interconnectivity, by using depth profiled positronium annihilation lifetime spectroscopy (PALS). It is found that PALS has good sensitivity to probe both interconnected and closed pores in the range from 0.3nm to 3Onto, even in the film buried beneath a diffusion barrier. A series of low dielectric constant films of organosilicon-silsequioxane with different weight percentages of porogen have been comparatively investigated. The PALS technique can be used to distinguish the open porosity from the closed one, to determine the pore size, and to detect the percolation threshold with the increasing porosity that represents the transition from closed pores to interconnected pores.Furthermore, the pore percolation length can be derived.     

镍中氢与缺陷互作用的正电子寿命和多普勒展宽研究

采用正电子寿命和多普勒展宽技术研究了退火、回复及冷轧镍中氢与缺陷的互作用．结果表明：冷轧镍充氢后正电子平均寿命和多普勒展宽S参数上升，并且寿命谱的两成分拟合出现一个390ps的长寿命分量；而退火及回复镍充氢后正电子平均寿命和多普勒展宽S参数均不改变．因此认为冷轧镍充氢后正电子参数（平均寿命和S参数）的上升取决于氢和空位的互作用，与氢和位错的互作用无关；氢空位对也可以作为聚集空位的核心 关键词：     

指数分布下步加试验中的区间估计

在交叉步进应力加速寿命试验中，假定在各组应力下产品的寿命分布为指数分布，对于定数截尾样本，求加速方程中系数的线性无偏估计（ＢＬＵＥ）。在此基础上本文通过构造某些枢轴量，并用Ｍｏｔｅ－Ｃａｒｌｏ方法给出了加速系数及正常应力下，产品可靠性特征量的置信区间。最后给出了一个数值例子。     

一种漂移室定位子性能反常现象的研究

研究了一种漂移室定位子性能的反常现象,它关系到定位子的使用寿命．着重测量了暗电流和随机噪声与时间、高压及温度的关系.     

学部委员钱临照教授主持SN一九八七A超新星事件

 从本期起,本刊连续刊载中国原子能科学研究院研究员杨桢写的《SN 1987A超新星事件》.本栏主持人、中国科大副校长、学部委员钱临照先生大病初愈,便审阅此稿,写下了情真意切的评语.钱先生评语不长,我们加了标题后一同发表,希望更多的学者与读者关心《物理前沿》栏目,使她办得更出色.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

上海光源储存环束流托歇克寿命研究

上海同步辐射装置(SSRF)是目前在建的第3代专用同步辐射光源. 其储存环电子能量3.5GeV, 设计束团发射度3.9nm•rad. 托歇克寿命将是影响束流寿命的最主要因素, 它主要受限于储存环的能量接受度. 储存环的能量接受度不但取决于 高频电压, 同时也受动力学孔径和物理孔径的影响. 因此能量接受度的计算将是复杂的. 通过计算机模拟跟踪的方法计算储存环各点的能量接受度, 其程序是建立在Accelerator Toolbox(AT)基础上的自编程序. 通过这些能量接受度数据给出更加准确的托歇克寿命, 并且分析了感兴趣的不同运行条件下的托歇克寿命的变化情况.     

High Voltage Pulse Power and the Technics for the Capacitor Power-Storage Type

Lower hybrid wave （LHW）, electro cyclotron （EC） and neutral beam injection （NBI） etc. are the important methods of auxiliary heating. They would be devoted to the HL-2A tokamak step by step. In order to satisfy the debug of each system and the need of the experiment, the system should be equipped with high voltage pulse power （HVPP） according to the requirement.