鞅方法在一类破产问题中的应用

本文从鞅条件出发 ,推导出了总理赔过程分别为复合 Poisson过程与复合二项过程 ,利率强度波动为带跳的 Poisson过程情形下的调节方程 ,并由此得到了一些有趣的结果。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

基因芯片荧光图象采集与分析

描述了基因芯片荧光图象的光学共聚焦成象,大范围高速扫描与控制,数据采集的原理和方法.并讨论了基因芯片荧光图象的分析算法,即模板定位与阈值分割相结合的半自动算法,并将其计算结果与完全采用人工分割算法的结果进行了比较.     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

A Facile Synthesis of Silver-Coated Composite Particles by Swelling Surface Method

We report a facile and rapid method for fabrication of composite particles consisting of a polystyrene (PS) core and a uniform silver shell. The process involves the PS colloid surface swelling, the anchoring of silver ions and nanoparticles onto the surfaces, and the subsequent growth of metal seeds in a short period. The present approach has the advantages of simplicity and high efficiency. The TEM images show the morphology of the obtained PS core-silver shell particles, and their chemical composition and crystallinity are analysed by x-ray diffraction. To our knowledge, this is the first study based on swelling PS surface for synthesis of silver-coated PS particles and may be implemented for preparing other metal-coated PS particles.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

ACTA MATHEMATICA SCIENTIA

Information for Authors Scope The aim of ACTA MATHEMATICA SCIENTIA is to present to the specialized readers （from the level of graduate students upwards） important new achievements in the areas of mathematical sciences. The journal considers for publication of original research （expository） papers in all areas related to the frontier branches of mathematics with other science and technology.     

Instructions to Authors

General COMMUNICATIONS IN THEORETICAL PHYSICS is published monthly by the Chinese Physical Society through the Institute of Theoretical Physics, the Chinese Academy of Sciences. Articles in this journal are abstracted/indexed in Science Citation Index （SCI）, Science Citation Index Expanded （also known as SciSearch）, ISI Alerting Services, and Current Contents/Physical, Chemical and Earth Sciences;     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.