Vapour Recoil Effect on a Vapour Liquid System with a Deformable Interface

A new two-sided model of vapour-liquid layer system with a deformable interface is proposed. In this model, the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory. We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.     

黄河水悬浮泥沙中金属含量的X射线荧光法测定

本文研究X射线荧光压片法测定黄河水悬浮泥沙中Cu、Zn、Ni、Mn、Fe、Zr、Sr、Rb、Ti元素的条件，并用峰背比法和非线性方法研究了样品稀释比与X射线强度间的线性关系。本法用GSD参考标样所建立的元素含量与X射线强度间的线性函数式线性良好，相关系数R值除Ti为0.98外，其余8种元素均在0.99以上，其余8种元素均在0.99以上。方法的可靠性用GSD参考标样检验，各元素测定结果的相对标准偏差均在3.6%以下。     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

双面金属包覆介质波层模序数的判别方法

在双面金属包覆介质波导中，随着介质层厚度的变化，会出现TM0模与TM1模的分离和简并两种状态，从而影响衰减全反射（ATR）谱中模序数的确认。通过对金属波层的理论分析和实验研究，提出了三种模序数确认方法：本征角计算法、吸收峰全峰半宽比较法和吸收峰峰间距比较法，实现了两种状态下对模序数的准确判断。     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

应力对La0.83Sr0.17MnO3薄膜输运性能的影响

采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明，LSMO薄膜属于正交晶体结构，薄膜取向与膜厚度 有关，当膜厚度为450nm或680nm时，主要取向〈200〉，而膜厚度为900nm时取向为〈020〉 ：根据离子对相互作用能和谐振子模型，得到了红外吸收与Mn—O—Mn键长和键角关系式，6 00cm^-1附近红外吸收与晶格常数b的变化有关；块体与薄膜的金属—绝缘体转变 温度(T_MI)存在较大差别，薄膜转变温度显著低于块体，并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化，引起键角改变及JT效应是转变温度变化的主 要原因. 关键词： 单晶硅 晶格常数 金属—绝缘体转变温度 应力诱导     

Non-Achievability of Metal-Insulator Transition in Two-Dimensional Systems

We present a simple demonstration of the nonfeasibility of metal-insulator transition in an exactly two-dimensional （2D） system. The Hartree-Fock potential in the 3D system is suitably modified and presented for the 2D case. The many body effects are included in the screening function, and binding energies of a donor are obtained as a function of impurity concentration so as to find out the possible way leading metal-insulator transition in the 2D system. While solving for the binding energy for a shallow donor in an isolated well of a GaAs/Ga1-x Als As superlattice system within the effective mass approximation, it leads to unphysical results for higher concentrations. It shows that the phase transition, the bound electron entering into the conduction band whereby （H）min=0, is not possible beyond this concentration. The results suggest thai a phase transition is impossible in 213 systems, supporting the scaling theory of localization. The results are compared with the existing data available and discussed in the light of existing literature.     

高纯金属镨中痕量稀土杂质的电感耦合等离子体原子发射光谱分析及光谱干扰的校正

本文提出了PGS-2型平面光栅光谱仪(色散率0.18纳米,二级光谱)与PlasmaTherm ICP-5000D射频发生器联用,乙醇预去溶方式进样,同时直接测定高纯金属镨中5个痕量稀土杂质元素的方法。并讨论了基体浓度对检出限的影响以及光谱干扰及其校正方法。当样品溶液中镨的浓度为5毫克/毫升时,测定下限分别为镧、钕和钐0.002%,铈0.003%和钇0.0005%。获得了良好的实验结果,其相对标准偏差为1.2-6.2%。     

手性金属试剂催化的不对称羟氰化反应

介绍了近年来发展起来的手性金属试剂催化的不对称羟氰化反应，并对其催化机理进行了讨论。