列文虎克（Leeuwenhoek，Antonie van，1632-1723）荷兰微生物学家（Microbiologist，Netherlands）

列文虎克幼年没有受过正规教育。1648年到阿姆斯特丹一家布店当学徒。中年以后被指派做市政事务工作。这种工作收入不少，又很轻松，使他有较充裕的时间从事喜爱的磨制透镜的工作，并且用之观察细微物体。由于勤奋及天赋，他磨制的透镜远远超过同时代人。制造的放大镜，形式很多。他一生磨制了400多个透镜。其中有一个，放大率竟达到270倍。他是第一个用放大镜看到微生物的人。     

端面抽运四镜折叠腔Nd∶YVO4激光器的研究

基于传输矩阵理论,针对端面抽运的z型折叠腔Nd∶YVO4固体激光器的谐振腔设计进行了数值模拟,详细分析了腔内各参量对谐振腔稳定性的影响.由模拟结果推断,z型腔激光器具有两个稳区,并且稳区的范围可通过谐振腔各分臂的臂长来调节.利用相同的光学元件在不同的稳区范围设计了两种热稳腔,指出了长短腔型各自的利弊.实验考察了输出功率随腔长改变的变化情况,在不同腔长下的不同稳区分别获得了稳定的1 342 nm激光输出,谐振腔稳区范围的变化规律与理论计算基本符合.     

温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了－10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明：随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出：该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

一维光子晶体缺陷模的偏振特性研究

利用周期结构的布洛赫定理推导了一维无限光子晶体缺陷模方程,研究了缺陷模的偏振特性,以及在不同入射角和缺陷层厚度下缺陷模位置的变化.利用传输矩阵方法对有限周期数光子晶体也进行了研究,分别对应一维无限光子晶体和有限周期数光子晶体给出了数值计算结果.通过比较这两者的数值结果得出了缺陷模随入射角和缺陷层厚度变化的一般规律.     

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HL-2A装置1MW/68GHz/1s电子回旋共振加热传输系统有两条传输线，每条传输线包括波纹波导、换向波导和直流隔离器。HE11模式微波在波导中传输，微波损失小且模式纯度高。用激光校准及用热敏纸测量短脉冲微波模式分布的手段确保传输线的准直性。传输线的倾斜角度小于0.0054rad。     

光学波段菲波纳契序列一维光子晶体纳米膜传输特性研究

为了研究光学波段菲波纳契序列一维光子晶体纳米膜的传输特性,应用传输矩阵方法数值模拟各种情况下的透射率即传输函数随频率的变化.数值结果表明在正入射时,菲波纳契序列一维光子晶体中的禁带宽度、中心位置、数目都与构成序列的项数、组元物理厚度、组成序列组元初始次序、组元折射率差值都对传输特性有较大影响,在可见光区组元折射率差值越大越易形成较宽禁带,进一步研究广义菲波纳契序列一维光子晶体纳米膜的传输特性,发现比典型情况更易在可见光区形成禁带.     

Transmission Frequency Properties of Elastic Waves along a Hetero-Phononic Crystal Waveguide

We investigate the propagation properties of hetero-phononic crystal waveguides by the improved eigen-mode matching theory, which can be used at same time to calculate both the transmission （reflection） coefficient and band structure. The numerical results show that the transmission frequency range is the same as the common range for two uniform waveguides composing the hereto-system, and the gap of any composite waveguide is also the gap of the hetero-phononic crystals waveguide.     

Probabilistic Controlled Teleportation of a Triplet W State

A scheme for probabilistic controlled teleportation of a triplet W state from the sender Alice to the distant receiver Bob is proposed. In this scheme, an m-qubit GHZ state serves as the control parameter. The m control qubits are shared by m（s1, s2… sm） spatially-separated supervisors. With the aid of local operations and individual measurements, including Bell-state measurement, Von Neumann measurement, and mutual classical communication, etc., Bob can faithfully reconstruct the original state by performing relevant unitary transformations. However, even if one participant does not cooperate during the process, the receiver Bob cannot fully recover the original state. This protocol can be extended to probabilistic controlled teleportation of an arbitrary N-qubit state and some other N-qubit entangled states.     

Helical Shell Structures of Ni-A1 Alloy Nanowires and Their Electronic Transport Properties

Six kinds of Ni-A1 alloy nanowires are optimized by means of simulated annealing. The optimized structures show that the Ni-A1 alloy nanowires are helical shell structures that are wound by three atomic strands, which is very similar to the case with pure metallic nanowires. The densities of states （DOS）, transmission function T（ E）, current-voltage （I - V） curves, and the conductance spectra of these alloy nanowires are also investigated. Our results indicate that the conductance spectra depend on the geometric structure properties and the ingredients of the alloy nanowires. We observe and study the nonlinear contribution to the I-V characteristics that are due to the quantum size effect and the impurity effect. The addition of Ni atoms decreases the conductance of the Ni-A1 alloy nanowire because the doping atom Ni change the electronic band structures and the charge density distribution. The interesting statistical results shed light on the physics of quantum transport at the nano-scale.     

Electron Transport in Ga-Rich InxGa1-xN Alloys

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys grown by metal-organic vapour phase epitaxy （MOVPE） technique are carried out as a function of temperature （15-350 K）. Within the experimental error, the electron concentration in Inx Ga1-x N alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys are considered in the metallic phase near the Mort transition. It has been shown that the temperaturedependent metallic conductivity can be well explained by the Mort model that takes into account electron-electron interactions and weak localization effects.