五阶势MKdV方程的一个不变性

§1Introduction Asweknow,Backlundtransformation[1-3]isaverypowerfulwayforfindingnonline evolutionequations.Inrecentdecades,Painlevéanalysis[4]hasbecomeaverypopu methodtoobtainBacklundtransformation.Inreference[5],fordevelopingthetheory Painlevéanalysis,AndrewPickeringintroduceanewexpansionvariableZwhichsatisf thefollowingRicattiSystem:Zx=1-AZ-BZ2,Zt=-C+(AC+Cx)Z-(D-BC)Z2.(1.Astheapplicationofthenewexpansionvaraible,thepotentialfifth-orderMKd equation(PMKdV5)-vxt+(vxxxxx-10k2v2…     

实对称五对角矩阵Procrustes问题

本文研究了实对称五对角矩阵Procrustes.利用矩阵的奇异值分解简化问题,得到了实对称五对角矩阵X极小化,最后给出数值算例说明方法的有效性.     

Electromagnetic transmission in configurations composed of two one-dimensional perfect electric conductor metal gratings

We study transmission properties in configurations composed of two single metal gratings with different thicknesses. Choosing the perfect electric conductor excludes the influence of intrinsic material dispersion on transmission behaviors; and as such, we aim to reveal the contribution of geometric dispersion to electromagnetic transmission. Transmission suppression line, instead of a transmission suppression point, is discovered, denoting the curve of the wavelength versus the interval or the lateral displacement between the two single gratings when the transmission suppression appears. A simplified model is proposed to comprehend the underlying physics of this special phenomenon.     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

2,3,3,3-四氟丙烯的合成研究

本文综述了目前2,3,3,3-四氟丙烯（HFO-1234yf）的合成路线,包括氟-氯交换、脱卤化氢、脱卤、脱卤醇、脱次氯酸乙酰酯、脱水、加氢脱卤、脱氢、高温热解、SF₄参与的氟化反应、脱羧等。其中,以2-氯-3,3,3-三氟丙烯（HCFO-1233xf）为原料的氟-氯交换路线、以1,1,1,2,3-五氟丙烷（HFC-245eb）为原料的脱氟化氢路线和2-氯-1,1,1,2-四氟丙烷（HCFC-244bb）为原料的脱氯化氢路线均具有原料容易合成得到、容易实现气相连续化大规模生产的优势,具有工业化价值。另外,分析对这些路线拥有独立知识产权的氟化工企业现状,提出今后HFO-1234yf领域的研究重点。     

红壤中痕量五氯酚的气相色谱法测定

五氯酚因其对生物体的广谱毒性和诱突变性，被我国和其他许多国家列为环境优先监测的持久性有机污染物之一。它在红壤地区曾广泛大量的使用，给环境造成一定的负面影响。本文探讨了应用超声波萃取、乙酸酐衍生化和气相色谱／电子捕获检测器(GC／ECD)测定红壤中痕量五氯酚的方法，并对不同的影响因素进行了对比，确定了一种较可靠的方法。该法的回收率为89％-101％。     

基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管

Organic-inorganic hybrid perovskite methylammonium lead iodide (CH₃NH₃PbI₃) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH₃NH₃PbI₃ single crystal with tantalum pentoxide (Ta₂O₅) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10^-5 cm²·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO₂ as the bottom gate dielectric. In addition, the effect of light illumination on the CH₃NH₃PbI₃ single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH₃NH₃PbI₃ single crystal. Different from a CH₃NH₃PbI₃ polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark (V_GS (gate-source voltage)=V_DS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta₂O₅ as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH₃NH₃PbI₃ also has potential for use in ambipolar transistors.     

Ti基IrO2＋Ta2O5阳极在H2SO4溶液中的电解时效行为

研究了450 ℃制备所得Ti/70％IrO2 30％Ta2O5（摩尔分数）高寿命阳极在H2SO4溶液电解过程中电极的物理、化学及电化学性能的时效行为.结果发现，整个电解过程可分为“活化”、“稳定”及“失效”三个阶段.在“活化”及“稳定”区内主要发生电极表面活性氧化物的溶解，涂层中IrO2金红石相的（110）、（101）晶面择优取向随电解时间延长而减弱，而（002）晶面择优增强.但是在“失效区”内，各晶面的择优程度却不随电解时间的变化而变化，这表明在“失效区”内氧化物的损失机制发生了变化.电化学阻抗谱测试表明，电极的析氧电化学反应电阻随电解时间的延长发生缓慢而连续的上升，而整个电极的物理阻抗在“失效区”内却发生突升现象.X射线衍射分析（XRD）表明，随电解时间的延长TiO2金红石相的衍射强度增大，达“失效区”时衍射强度发生突升.根据实验现象特别是“失效区”内阳极的时效行为提出高寿命Ti基氧化物涂层阳极的失效机制.     

Y3+,W6+掺杂的矿物锂快离子导体Li1.2+x-yYxTi1.9-xAl0.1Si0.1WyP2.9-yO12系统的合成与表征

以LiTi2(PO4)3为母体,以天然高岭石为起始原料,经高温固相反应制得了一系列新的锂快离子导体Li1.2+x-yYxTi1.9-xAl0.1Si0.1WyP2.9-yO12(以下简称Y-W-Lisicon).X射线粉末衍射分析结果表明,在x＝0.10,y≤0.20及x＝0.20,y≤0.20的组成范围内能得到空间群为R3c,类似于Nasicon的三方结构,但在上述组成范围内均有杂相存在.应用交流阻抗技术测定电导率的结果表明,起始组成为x=0.10,y=0.10的样品在室温下具有较高的离子电导率,为1.65×10-5 S·cm-1;组成为x=0.20,y=0.10的样品在573 K时具有较高的离子电导率,为6.53×10-3 S·cm-1,该样品的分解电压为3.0 V.     

电沉积AuInSe2半导体薄膜上的电化学振荡现象

研究了电沉积制得的ＡｕＩｎＳｅ２半导体薄膜上过氧化氢阴极还原过程中产生的电化学振荡行为，对影响该振荡行为的一些因素如半导体薄膜的后处理、溶液组成、传质、光照、化学浸渍作用等进行了分析，同时采用外界周期性光照和外接小幅度正弦波电位来调节振荡频率，为金铟硒半导体薄膜发展成为光电传感器件提供了一定的理论与实践基础．