金属和金属氧化物热反应的实验探究

报道了有关金属和金属氧化物之间热反应的实验,经研究发现,一种金属都能在高温下夺取另一种金属性比它弱的金属氧化物中的氧,能够将另一种金属从氧化物中还原出来。     

掺钴氧化锌稀磁半导体的SEM及X射线能谱微分析研究

采用水热法,以CoCl₂·6H₂O为前驱物,KOH作为矿化剂合成了掺钴氧化锌稀磁半导体晶体。利用扫描电子显微镜(SEM)及X射线能谱仪(XREDS)对合成晶体的微观形貌、表面及内部掺杂元素Co的相对含量和分布的均匀性进行了研究。研究结果表明：水热法合成的掺Co氧化锌晶体具有多种微观形貌,较大的晶体具有极性生长特性。随晶体形貌不同,显露面也发生了相应改变。不同微观形貌的晶体其Co含量有所差异,较大的晶体掺杂Co元素相对含量大于较小的晶体,+c(1011)显露面Co元素的含量比+c(1010)面高,锥柱状晶体其区别尤为明显。大的晶体内部存在着少量的氧化钴团簇,晶体表面与晶体内部Co元素分布相对均匀。由于Co2+具有磁性,因此,氧化钴团簇的存在将对氧化锌稀磁半导体晶体的磁性产生一定的影响。     

Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure

This paper investigates the capacitance--voltage ($C$--$V$) characteristics of F doping SiCOH low dielectric constant films metal--insulator--semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF7755, 6855http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057701https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111779F-SiCOH, low-k dielectrics, capacitance--voltage characteristicProject supported by the National Natural Science Foundation of China (Grant No.~10575074).2/4/2009 12:00:00 AMThis paper investigates the capacitance--voltage ($C$--$V$) characteristics of F doping SiCOH low dielectric constant films metal--insulator--semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF$_{3})$ electron cyclotron resonance plasmas. With the CHF$_{3}$/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of $C$--$V$ curves and the increase of flat-band voltage $V_{\rm FB}$ from $-6.1$~V to 32.2~V are obtained. The excursion of $C$--$V$ curves and the shift of $V_{\rm FB}$ are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF$_{3}$/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small $V_{\rm FB}$ of 2.0~V.半导体结构;电压特性;电容电压;绝缘体;薄膜;金属;电子回旋共振等离子体;兴奋剂This paper investigates the capacitance-voltage （C-V） characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasilox-ane [DMCPS） and trifluromethane （CHF3） electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of fiat-band voltage VFB from -6.1 V to 32.2V are obtained. The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0V.     

铋系半导体光催化材料

近年来,铋系半导体材料因其在可见光辐照下对难降解有机物具有良好的催化作用而成为新型光催化材料的研究热点之一。本文综述了国内外铋系光催化剂的研究动态和主要成果。铋系光催化剂在可见光范围内有明显的吸收,具有较好的光催化活性。此外,大多数铋系光催化剂在反应过程中具有较高的稳定性。通过改进制备方法、掺杂负载、构建异质结等技术,可以有效提高铋系半导体材料的可见光吸收性能或抑制光生电子和空穴的复合,从而进一步提高其光催化性能。尽管铋系光催化剂由于其导带位置比氢的氧化还原电位低,但是通过设计合成新的能带结构可使其满足氧化和还原水的能带要求,从而实现铋系光催化剂在光解水制氢中的应用。最后,对铋系光催化剂未来的发展趋势进行了展望,并强调针对特殊用途和结合量化计算方法对开发新型铋系光催化剂的重要性。     

Complementarity of CFD, experimentation and reactor models for solving challenging fluidization problems

Experimentalists, numerical modellers and reactor modellers need to work together, not only just for validation of numerical codes, but also to shed fundamental light on each other＇s problems and underlying assumptions. Several examples are given, Experimental gas axial dispersion data provide a means of choosing the most appropriate boundary condition （no slip, partial slip or full slip） for particles at the wall of fluidized beds. CFD simulations help to identify how close ＂two-dimensional＂ experimental columns are to being truly two-dimensional and to representing three-dimensional columns. CFD also can be used to provide a more rational means of establishing assumptions needed in the modelling of two-phase fluidized bed reactors, for example how to deal with cases where there is a change in molar flow （and hence volumetric flow） as a result of chemical reactions.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

Novel deep—submicron x—ray lithography process for T—shaped gate patterns

The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.     

自旋电子学和相干态

自旋电子学是近年来发展起来的一个新研究领域,它研究固体,特别是半导体中的电子自旋相干态,实验发现,自旋相干态能够保持足够长的时间（几百ps量级）,因此有可能用来制造一个固态的量子计算机,但是制造实际的自旋电子器件,首先需要解决的是将自旋极化电子（或穴穴）注入半导体中的方法和如何检测它们。     

半导体量子器件物理讲座：第五讲 弹道输运器和量子干涉器件

当器件的尺度小型与电子的平均自由程相当时,电子的输运可以看作弹道输运。文章介绍了隧穿热电子晶体管输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器,如果器件的尺寸进一步减小,电子的波动特性也必须考虑,文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理。     

半导体异质结及其在光电子学中的应用—2000年诺贝尔物理奖评述

瑞典皇家科学院2000年10月10日宣布,将2000年度诺贝尔物理奖授予三位科学家,他们是俄罗斯科学院圣彼得的堡约飞技术物理研究所的Zh.Alferpv、美国加利福尼亚大学的Herbert Kroemer和美国德克萨斯仪器公司的Jack S.Kilby,以表彰他们为现代信息技术,特别是他们发明的高速晶体管、激光二极管和集成电路（芯片）所作出的奠基性贡献,Kilby由于发明并发展了集成电路技术而获奖,通过这项发明,微电子学成为所有现代技术的基础,Kilby的获奖成果已有另文（见2001年第3期《物理》）述评,Alferov和Kroemer则是由于他们在半导体异质结及其在电子和光电子学中的应用方面的突出贡献而获奖,该不仅就两位诺贝尔物理奖得主在异质结及其在光电子中的应用方面的贡献进行评述。