两种调制方式下主从激光器同步性能的理论研究

 以单周期信号为例,数值模拟并讨论了注入频率和注入光场波动强度对主从式半导体激光器同步性能的影响。分别通过直接调制和外部调制两种方式获得单周期信号,并采用改进的参数——相似指数评价系统的同步性能。研究结果表明：当注入强度足够大时,系统实现注入锁定同步,外部调制的相似指数大于内部调制;注入强度恒定时,同步品质几乎不受调制指数的影响,而受调制频率的影响;由于内部、外部调制引起主激光器的输出反相,两种调制方式下同步品质随调制频率的变化趋势也相反。     

光注入提高半导体激光器混沌载波发射机的带宽

外光反馈下的半导体激光器可视为混沌载波发射机.数值研究发现，外部强光注入可以显著提高混沌载波发射机的带宽，带宽提高的程度在一定范围内与注入光的强度成正比.当外部光注入系数k_inj=0.39时，混沌载波的带宽由无光注入时的2.7GHz增大到14.5GHz，提高了5倍多.研究还发现，在相同的注入强度条件下，当注入光的频率比半导体激光器的中心频率高2—4GHz时，可实现最大限度的带宽增强.此外，适当提高半导体激光器的偏置电流也可以在一定程度上提高其产生的混沌载波的带宽. 关键词： 半导体激光器 混沌 带宽     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

基于半导体光放大器的干涉型器件中噪声特性的分析

分析了基于半导体光放大器(SOA)的干涉仪分别处于“开”、“关”两种工作状态时的输出信噪比及噪声指数,发现当干涉仪处于“开”态时输出信噪比有所恶化,并导出了附加噪声因子的表达式。实验结果进一步证明了理论分析的正确性。     

阿耳费罗夫（Alferof，Zhores I，1930-）俄国物理学家（Physicist，Russia）

阿耳费罗夫主要从事半导体异质结构方面的研究工作，因而导致异质结晶体管、发光二极管和双异质结半导体激光器的发明。异质结晶体管的工作频率比普通晶体管高100倍，噪声小，适合做微波晶体管、高速开关管和光电晶体管。阿耳费罗夫因这方面的成就，与克勒默（Kroemer）分享Y2000年诺贝尔物理学奖。他曾来我国访问，并被南京大学聘为名誉教授。     

利用可调谐半导体激光光谱技术对含尘气体中NH3的测量

利用可调谐半导体激光吸收光谱技术(TDLAS)并结合波长调制,在近红外波段1531.7nm处对常温常压下的NH3进行浓度测量.在10 m的长程吸收池内得到了25×10-6的浓度信号,并且在25×10-5-400×10-6浓度范围内二次谐波信号与浓度具有良好的线性关系.讨论了粉尘颗粒对于二次谐波信号的干扰,并提出了利用激光强度线性拟合解决颗粒对气体测量干扰的方法.     

Electronic Structure and Optical Properties of Semiconducting Orthorhombic BaSi2

Full potential linearized augmented plane wave （FPLAPW） method calculations are carried out for semiconducting orthorhombic BaSi2. The optical properties and the origin of the different optical transitions are investigated. Our calculated band gap of 1.0918eV is indirect, which is in good agreement with the experimental result. The bonds between Ba and Si are considered to be electrovalent bond. The anlsotropy in the imaginary part ε2（w） and real part εl（w） of the optical dielectric tensor are analysed. The contributions of various transition peaks are explained from the imagnary part of the dielectric function.     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Persistent spin current in a quantum wire with weak Dresselhaus spin——orbit coupling

The spin current in a parabolically confined semiconductor heterojunction quantum wire with Dresselhaus spin--orbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin--orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.     

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.