Disentangling the Effects of Thickness of the Neutron Skin and Symmetry Potential in Nucleon Induced Reactions on Sn Isotopes

The effects of density dependence of symmetry energy and the thickness of the neutron skin in proton （neutron） induced reactions on Sn isotopes are investigated by means of the improved molecular dynamics model. The investigation shows that the target size dependence of the reaction cross sections for proton induced reactions on Sn isotopes is sensitive to the density dependence of the symmetry energy and less sensitive to the thickness of the neutron skin of the target nuclei, but that, for neutron induced reactions on Sn isotopes, it is less sensitive to the density dependence of the symmetry energy and sensitive to the thickness of the neutron skin of the target nucleus.     

Effect of Annealing on Structural and Magnetic Properties of a Thick （Ga,Mn）As Layer

We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115K by postgrowth annealing for a 500-nm (Ga,Mn)As layer.Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.     

Theoretical analysis of the acoustical characteristics of suspended micro-perforated panel absorbers

Sound absorption characteristics of suspended micro-perforated panel absorbers were investigated theoretically. The method of half thickness model of such panel absorber with quadripole analysis was used for predicting its acoustic performance. The analysis results show that the predictions agree well with the measurements of absorption in the reverberation chamber. The factors affecting the absorption characteristics for such absorbers were discussed, and some rules as design guidelines were given.     

制备均一性靶丸过程中的影响因素

在激光聚变实验中,高球形度、高厚度均一性的靶丸经常通过乳液微封装方法来制备。利用T.Norimatsu的模型研究在靶丸制备过程中,界面间表面张力、油相粘度、壳层尺寸、壳层厚度的影响。结果显示:较大的表面张力,较小的壳层尺寸,会使胶囊具有更好的均一性。当外部变形形式不同的时候,油相的粘度对于壳层均一性会有不同作用。     

多孔介质高温蓄热的热性能分析

高温蓄热是太阳能热发电、高温热利用中的重要组成部分。本文对基于多孔介质和熔融盐流体的高温蓄热过程进行了计算分析,对蓄热时间、流体进口温度、进口速度对斜温层温度分布的影响进行了分析。结果表明进口温度对斜温层厚度的影响较小,进口速度的增加会导致斜温层厚度的增加。同时对流体和多孔介质的温度差进行了分析,得到了应用于局部热平衡和非热平衡的雷诺数判据。     

旋涂法制备WO3薄膜电致变色性能

"智能窗"大规模推广顺应可持续发展潮流,三氧化钨(WO_3)是生产"智能窗"的一种重要电致变色材料,但调控WO_3薄膜电致变色性能机制仍待进一步研究。采用旋涂法制备WO_3薄膜,重点研究了溶液浓度和旋涂次数对调控WO_3薄膜电致变色性能的影响。通过表面轮廓仪测量薄膜厚度,X射线衍射(XRD)测量薄膜结晶情况,原子力显微镜(AFM)和扫描电子显微镜(SEM)分析薄膜表面形貌,光谱仪测量薄膜初始态、着色态和褪色态的透射率。实验结果表明,随着溶液浓度增加(0. 2～1. 0 mol/L),薄膜厚度从9. 7 nm增加到33. 3 nm,透射率调制能力从0%提升到37. 0%;多次旋涂薄膜厚度线性增长,线性拟合优度(R~2)达0. 98,5次旋涂后透射率调制能力达51. 3%。改变溶液浓度和旋涂次数都是调控薄膜透射率调制能力的有效手段,精准调控薄膜透射率调制能力对设计不同应用场景的电致变色器件具有重大意义。     

厚度误差对THz-TDS的测量不确定度分析

阐述了基于菲涅尔公式的透射式太赫兹时域光谱系统提取样品光学常数的方法和原理,分析了样品厚度误差对THz-TDS测量不确定度的影响,并建立了相应的不确定度模型。进行太赫兹时域光谱测量实验,提取硅片在太赫兹波段的折射率,并计算了误差对提取样品折射率的影响。结果表明,随着厚度误差的增大,系统测量偏差也随之增大。对于较厚样品,相同厚度误差对其测量结果影响较小。样品厚度为994μm时,在厚度存在1μm的测量误差情况下,系统测量折射率的偏差为0.001 2,接近模型的仿真值。实验结果验证了厚度误差对测量不确定度模型的有效性,了解了厚度误差对系统测量结果的影响情况,对测量过程及结果分析具有一定的指导意义。     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

基于PTCDA的有机/无机光敏二极管结构优化

以p型硅和苝四甲酸二酐(perylene-3,4,9,10-tetracarboxylic acid dianhydride,PTCDA)为异质结,梳状金(Au)薄膜作为顶电极和光入射窗口制备了光敏二极管。研究表明,PTCDA的厚度和Au电极的厚度对光敏二极管的光响应度有很大的影响。对比不同PTCDA厚度的器件性能,在PTCDA厚度为100 nm时,光响应度最高达到0.3 A/W。进而采用最优化的100 nm厚的PTCDA薄膜制备硅基光敏二极管,对比不同Au电极厚度的器件性能。在Au厚度为20 nm时,器件的光响应度达到最优化的0.5 A/W。