陶行知（Tao Xing-Zhi，1891-1946）中国教育家（Educationist，China）

陶行知，原名文浚，后改知行，又改行知。安徽省歙县人。1914年留学美国，曾师从实用主义教育家杜威学习。1916年回国后，任南京高等师范学校教务主任，继任中华教育改进社总干事，推动平民教育运动，最早注意到乡村教育问题。1926年起草发表了《中华教育改进社改造全国乡村教育宣言》。宣传生活教育，要求教育与实际相结合，为人民大众服务。设想以教育为主要手段来改善人民的生活。     

Quark Virtuality and QCD Vacuum Condensates

Based on the Dyson-Schwinger equations (DSEs) in the ‘rainbow‘ approximation, we investigate the quark virtuality in the vacuum state and quantum-chromodynamics (QCD) vacuum condensates. In particular, we calculate the local quark vacuum condensate and quark-gluon mixed condensates, and then the virtuality of quark. The calculated quark virtualities are λu,d^2 0.7 GeV^2 for u, d quarks, and λs^2=1.6 GeV^2 for s quark. Our theoretical predictions are consistent with empirical values used in QCD sum rules, and also fit to lattice QCD predictions.     

混凝土靶球形腔膨胀侵彻模型应用

Bishop等人于1945年开始用解析方法研究侵彻机理，导出了柱形腔和球形腔的准静态v膨胀方程，后来这种方法被称为空腔膨胀理论。目前，空腔膨胀理论已经在多种不同材料靶的侵彻研究中获得较为普遍的应用。Forrestal等人于1997年提出了一个适用于混凝土材料靶的球对称空腔膨胀侵彻模型，模型对靶结构的描述是将其压力与体积应变的关系理想化为不可压或线性可压，而将剪切强度与压力的关系理想化为由一拉伸阈值表示的Mohr-Coulomb准则。     

中国古算筹早期算法及“大衍之数”“太一算”新探

一、古籍记载及现代人推演的“太一算” 《数术记遗》中记载了“太一算，太一之行，去来九道”。现代日本学者、中国学者对“太一算”有如图1、图2、图3的推想图。     

中国现代珠算史料（1962年～1988年）

九、中国珠协若干重要会议 中国珠协开创之初，尽管人、财、物极端困难，但在财政部、中国科协的部分财力支持下，每年也要开十次左右会议。这里不可能也无必要评加叙述。但是，有关重大转折问题的会议，追述一下很有必要。     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

C59N单分子整流器

通过将单个C59N分子置于双势垒隧道结中，从而利用单电子隧穿效应和C59N分子的特殊能级结构，我们成功地实现了一种新型的单分子整流器件．实验中这个整流器件的正向导通电压约为0．5-0．7V，反向击穿电压约为1．6—1．8V．理论分析表明，中性C59N分子的半占据费米能级以及在不同充电情况下费米能级的不对称移动是形成整流效应的主要原因．其构成原理也决定了该器件具有稳定、易重复的特点．     

充分发挥物理学在建设创新型国家中的基础作用

胡锦涛主席在全国科技大会上提出的，坚持走中国特色自主创新道路，建设创新型国家的口号，正在激励全国各族人民为实现我国中长期发展目标而奋斗．如何理解、实践这个口号，把每个行业、每个领域建设成创新型子系统，从而使整个国家有效地向着创新型国家目标发展，是13亿中国人民共同的任务，是历史赋予当代炎黄子孙的使命。我们必须在深入学习、研究理解胡锦涛主席关于“坚持走中国特色的自主创新道路，为建设创新型国家而奋斗”重要讲话的基础上，对本专业领域的创新型发展提出奋斗目标，作出科学规划。为此，我们就此主题谈一些想法，以期引起物理学界和教育界的朋友们深入思考、研究。     

New Spinor Field Realizations of the Non-Critical W3 String

We investigate the new spinor field realizations of the W3 algebra, making use of the fact that the W3 algebra can be linearized by the addition of a spin-1 current. We then use these new realizations to build the nilpotent Becchi-Rouet-Stora-Tyutin charges of the spinor non-critical W3 string.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.