中微子物理若干前沿问题

 在过去的几年间,大量的实验结果已经表明中微子有非零质量以及轻子味混合。这一进展为我们打开了一个全新的值得探索的基本粒子世界。关于中微子我们已经知道了多少,我们想要发现什么?本文将从理论与唯象的观点进行阐述。目前中微子物理的前沿问题主要包括:中微子真的发生味转化吗?有几代中微子?存在惰性中微子吗?中微子的质量是多少?中微子是马约拉纳粒子还是狄拉克粒子?轻子味混合矩阵的混合角有多大?轻子味混合矩阵包含CP破坏位相吗?如果包含,那么在中微子振荡和无中微子双β衰变中,这些位相会导致可探测的CP破坏效应吗?     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

Orlicz范数下的Hardy-Hilbert不等式

给出了Orlicz范数下的Hardy-Hilbert不等式的一种形式,建立了当N-函数M(u)及其余N-函数N(u)均满足Δ′条件时Orlicz范数下的积分型及双级数型Hardy-Hilbert不等式.     

一个改进的Hardy-Hilbert不等式

通过建立权系数的不等式,得到一个改进的Hardy-Hilbert不等式.     

环面上具有间断梯度的势函数的模拟退火

本文证明了环面上具有间断梯度的势函数的模拟退火过程：dXt=-VU(Xt)dt √2dWt概率收敛到势函数的全局极小集附近。     

Hajek—Renyi不等式的推广及其应用

对Hajek-Renyi不等式进行了推广，利用推广的不等式给出了随机变量序列绝对平均意义下的强大数定律的一个条件．     

Duration-Dependent Asymmetry in Photoionization of H atoms in Few-Cycle Laser Pulses

The photoionization of H atoms irradiated by few-cycle laser pulses is studied numerically. The variations of the total ionization, the partial ionizations in opposite directions, and the corresponding asymmetry with the carrier-envelope phase in several pulse durations are obtained. We find that besides a stronger modulation on the partial ionizations, the change of pulse duration leads to a shift along carrier-envelope （CE） phase in the calculated signals. The phase shift arises from the nonlinear property of ionization and relates closely to the Coulomb attraction of the parent ion to the ionized electron. Our calculations show good agreement with the experimental observation under similar conditions.     

关于算子方程AX=XAX与AX=XA=XAX

用A的不变子空间作参数，给出了算子方程AX＝XAX的全部解。当A是单射或稠值域时，或者当A是正规算子时，给出了算子方程AX＝XA＝XAX的全部解。我们还给出正规算子X是算子方程AX＝XZ＝XAX的解的充分必要条件。     

Theoretical Studies on the Si（001）-SiO2 Interface Structure

1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…