Composition dependence of unipolar resistance switching in TaOx thin films

Amorphous TaO_x thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaO_x/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta₂O₅ in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaO_x film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaO_x films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Scanning tunneling lithography of silicon nanoparticle films

Monolayer and bi-layer silicon nanoparticle (SiNP) films with wide band gaps (up to 4 eV) have been produced in UHV with narrow size distributions of particles with 2-4 nm diameters and were studied using scanning tunneling microscopy (STM) and spectroscopy (STS). The films then were manipulated by applying different values for the tunneling resistance. Nanoparticle fusion and fission processes allow to shape the particles in the films in various ways and to write in white and black on the film template.     

On Poincaré-Friedrichs Type Inequalities for the Broken Sobolev Space ${\rm W}^{2,1}$

We are concerned with the derivation of Poincaré-Friedrichs type inequalities in the broken Sobolev space $W^{2,1}$($Ω$; $\mathcal{T}_h$) with respect to a geometrically conforming, simplicial triagulation $\mathcal{T}_h$ of a bounded Lipschitz domain $Ω$ in $\mathbb{R}^d$ , $d$ $∈$ $\mathbb{N}$. Such inequalities are of interest in the numerical analysis of nonconforming finite element discretizations such as ${\rm C}^0$ Discontinuous Galerkin (${\rm C}^0$${\rm DG}$) approximations of minimization problems in the Sobolev space $W^{2,1}$($Ω$), or more generally, in the Banach space $BV^2$($Ω$) of functions of bounded second order total variation. As an application, we consider a ${\rm C}^0$${\rm DG}$ approximation of a minimization problem in$BV^2$($Ω$) which is useful for texture analysis and management in image restoration.     

Field-induced ionization and Coulomb explosion of nitrogen

Femtosecond-laser field-induced ionization and Coulomb explosion of diatomic nitrogen were systematically investigated using time-of-flight mass and photoelectron spectrometry. Both linearly and circularly polarized femtosecond laser pulses were used at intensities varying from 5×10¹³ to 2×10¹⁵ W/cm². Strong N₂ ⁺, N₂ ²⁺, N⁺, N²⁺ and N³⁺ ion signals were observed for horizontally polarized pulses. Moreover, signals from the atomic ions exhibited a double-peak structure. Suppression of ionization was observed for circularly polarized pulses, while for vertically polarized pulses, only N₂ ⁺ and N₂ ²⁺ ions were observed. The angular distributions of the ions were measured under zero-field conditions in the ionization zone. The atomic ions N⁺, N²⁺ and N³⁺ exhibited highly anisotropic distributions, with maxima along the laser polarization vector and zeroes normal to the laser polarization vector. In contrast to the atomic ions, N₂ ⁺ exhibited a strong isotropic angular distribution. These observations indicate that dynamic alignment is responsible for the observed anisotropic angular distribution of the atomic ions. The kinetic energy spectrum of the photoelectrons is featureless and broad, extending above the ponderomotive potential of the laser pulse. The angular distribution is markedly anisotropic, with a maximum along the laser polarization vector. These observations further support the notion that the field-ionization mechanism is dominant under our experimental conditions. Received: 29 January 2002 / Revised version: 15 March 2002 / Published online: 12 July 2002     

Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors

The effects of annealing on structure and laser-induced damage threshold (LIDT) of Ta₂O₅/SiO₂ dielectric mirrors were investigated. Ta₂O₅/SiO₂ multilayer was prepared by ion beam sputtering (IBS), then annealed in air under the temperature from 100 to 400 °C. Microstructure of the samples was characterized by X-ray diffraction (XRD). Absorption of the multilayer was measured by surface thermal lensing (STL) technique. The laser-induced damage threshold was assessed using 1064 nm free pulsed laser at a pulse length of 220 μs.

It was found that the center wavelength shifted to long wavelength gradually as the annealing temperature increased, and kept its non-crystalline structure even after annealing. The absorbance of the reflectors decreased after annealing. A remarkable increase of the laser-induced damage threshold was found when the annealing temperature was above 250 °C.     

On the angular dependence of gaps in 1-D Si/SiO2 periodic structures

A multilayer of silicon and silicon dioxide was used to study the angular dependence of reflectance maxima originating from interference and bulk optical properties. Silicon dioxide has a lattice resonance in the infrared causing an interval of high reflectance for wavelengths around 9 μm. The multilayer was designed such that the interference maxima do not overlap/interact with the material related reflectance maximum. In this way the different angular behavior for the two types of reflectance maxima can be studied simultaneously. Experimental and calculated reflectance spectra for s- and p-polarized light for angles of incidence between 0° and 90° collected for every 5° are presented. The reflectance features caused by interference generally move to shorter wavelengths with increasing angle of incidence, and the materials related peak is widened for (s-polarized light) and excitation of the longitudinal modes was observed for p-polarized light.     

On the Green’s function and iterative solutions of loop quantum cosmology

Here we shall find the Green’s function of the difference equation of loop quantum cosmology. To illustrate how to use it, we shall obtain an iterative solution for closed model and evaluate its corresponding Bohmian trajectory.     

Applications of the Wold decomposition to the study of row contractions associated with directed graphs

Based on a Wold decomposition for families of partial isometries and projections of Cuntz-Krieger-Toeplitz-type, we extend several fundamental theorems from the case of single vertex graphs to the general case of countable directed graphs with no sinks. We prove a Szego-type factorization theorem for CKT families, which leads to information on the structure of the unit ball in free semigroupoid algebras, and show that joint similarity implies joint unitary equivalence for such families. For each graph we prove a generalization of von Neumann's inequality which applies to row contractions of operators on Hilbert space which are related to the graph in a natural way. This yields a functional calculus determined by quiver algebras and free semigroupoid algebras. We establish a generalization of Coburn's theorem for the -algebra of a CKT family, and prove a universality theorem for -algebras generated by these families. In both cases, the -algebras generated by quiver algebras play the universal role.

     

Primary result of ^236U measurement with accelerator mass spectrometry at CIAE

The rare isotope ^236U has a half-life of 2.342（3）×107 years, and is produced principally by thermal neutron capture on ^235U. The isotopic atom ratio of ^236U/^238U depends on the integral thermal neutron flux received by the material of interest. ^236U is potentially useful as a ＂fingerprint＂ for indicating the presence of neutron-irradiated uranium usually originating from nuclear activity. By extracting negative molecular ion UO^- from the uranium oxide target, simulating the ^236U^16O^- beam transport with ^238U^16O^- and ^208Pb2^16O^- pilot molecular ion beam, transporting the ^236U-containing ion beam with a high resolution injection magnet analyzer and electrostatic analyzer system, and finally identifying and detecting ^236U with a time-of-flight detector （TOF）, a method for AMS （Accelerator Mass Spectrometry） measurement of ^236U was established on the HI-13 Accelerator AMS system at China Institute of Atomic Energy.     

{Well-posedness of degenerate differential equations with infinite delay in Holder continuous function spaces

Using operator-valued $\dot{C}^\alpha$-Fourier multiplier results on vector- valued H\"older continuous function spaces, we give a characterization for the $C^\alpha$-well-posedness of the first order degenerate differential equations with infinite delay $(Mu)"(t) = Au(t) + \int_{-\infty}^t a(t-s)Au(s)ds + f(t)$ ($t\in\R$), where $A, M$ are closed operators on a Banach space $X$ such that $D(A)\cap D(M)\neq \{0\}$, $a\in L^1_{\rm{loc}}(\R_+)\cap L^1(\mathbb{R}_+; t^\alpha dt)$.