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排序方式: 共有2169条查询结果,搜索用时 16 毫秒
31.
Yongsheng Liu Jincang Zhang Shixun Cao Xiaoyong Zhang Xi Li Kang Deng 《Solid State Communications》2006,138(2):104-109
In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, TC increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition Ts and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and Ts is ∼91 K. 相似文献
32.
Jong Seong Bae Kyoo Sung Shim Soung-soo Yi Young Soo Kim 《Applied Surface Science》2006,252(13):4564-4568
The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y2−xGdxO3:Eu3+ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li+ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y2−xGdxO3:Eu3+ thin films. In particular, the incorporation of Li and Gd into the Y2O3 lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y1.35Gd0.6O3:Eu3+ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y2O3:Eu3+ thin films. 相似文献
33.
Yiming Huai Mahendra PakalaZhitao Diao Dmytro ApalkovYunfei Ding Alex Panchula 《Journal of magnetism and magnetic materials》2006
Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (Jc0) down to 2 MA/cm2, which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlOx MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed. 相似文献
34.
Applying Parikh's quantum tunneling model, we study the quantum tunneling radiation of Reissner-Nordström de Sitter black hole with a global monopole. The result shows that the tunneling rates at the event
horizon and the cosmic horizon are related to Bekenstein-Hawking entropy
if we take the energy conservation into consideration, and the true radiate
spectrum is not precisely thermal. 相似文献
35.
R. Guerrero F.G. Aliev R. Villar J. Hauch M. Fraune G. Güntherodt K. Rott H. Brückl G. Reiss 《Journal of magnetism and magnetic materials》2006
We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm2. The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm2) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure. 相似文献
36.
Qingrong Zheng Gang Su Jian Wang Hong Guo 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,25(2):233-238
We report a theoretical analysis of the phonon thermal conductance, κ(T), for single wall carbon nanotubes (SWCN). In a range of low temperatues up to 100 K, κ(T) of perfect SWCN is found to increase with temperature, approximately, in a parabolic fashion. This is qualitatively consistent
with recent experimental measurements where the tube-tube interactions are negligibly weak. When the carbon-carbon bond length
is slightly varied, κ(T) is found to be qualitatively unaltered which implies that the anharmonic effect does not change the qualitative behavior
of κ(T).
Received 12 June 2001 相似文献
37.
WANG Zhaoying WU Xing 《Chinese Journal of Lasers》2002,11(2):81-83
Using specially coated mirrors, an output energy of 0.97 J at 1.32 μm from a Nd3 : YAG pulse laser is obtained with pumping energy of 66 J. The repetition rate is 1 pulse/sec and the slope efficiency is 1.7%. The repetition rate can be changed from 1 pulse/sec to 10 pulses/sec. 相似文献
38.
采用密度泛函理论(DFT)中的B3LYP方法,在LANL2DZ基组水平上优化WmBn(m+n≤7)团簇的几何结构,得到它们的基态构型,并对基态构型的平均结合能、二阶能量差分、能隙及WIB键级进行计算.结果表明:WBn团簇的基态构型均是平面结构;当m≥2且m+n≥4时,除W3B团簇外,其余团簇的基态结构均为立体结构;团簇的热力学稳定性随W原子个数的增加越来越好,W-W键的强度明显高于W-B和B-B键,W原子对团簇的稳定性起主导作用;W2B2和W3B团簇最稳定. 相似文献
39.
40.
M. B. Freiler M. C. Shih S. Kim M. Levy I. P. Herman R. Scarmozzino R. M. Osgood Jr. 《Applied Physics A: Materials Science & Processing》1996,63(2):143-151
We present a study of pattern-transfer and etch-induced damage in photon-induced cryoetching. Features with effective radii as small as 100 nm have been formed in both bulk and layered GaAs/AlGaAs materials. A measurement of the photoluminescence of etch-defined deep- submicrometer structures material suggests that this form of etching results in minimal process-induced damage. Modeling of the luminescence vs feature size for these features shows that the luminescence is limited only by carrier diffusion and non-radiative surface recombination. 相似文献