Naphthyl azomesogens with lateral chloro groups

A homologous series of azomesogens, 2″-[4-(4′-n-alkoxybenzoyloxy)-2-chlorophenylazo] naphthalenes, with lateral chloro groups was synthesised. All the homologues synthesized exhibit enantiotropic nematic mesophase. The mesomorphic properties of the present series are compared with other structurally related series to evaluate the effect of lateral chloro group and its position on mesomorphism This paper was presented at the 10th National Conference on Liquid Crystals held at Bangalore, India during 9–11 October 2003.     

Photorefractive Four-Wave Mixing Switches Utilizing Pockels Effect -Longitudinal and Lateral Switches-

We carried out detailed calculations for photorefractive wave-mixing switches based on one of three crystals with high electro-optic coefficients, namely, BaTiO₃, Strontium Barium Niobate (SBN (0.75)), and Potasium Sodium Strontium Barium Niobate (KNSBN). A comparison of results for the three crystals shows that a 0_-cut BaTiO³ crystal is suitable for a longitudinal switch and requires a voltage of about 80 for a 2-mm-thick crystal to induce sufficient phase mismatch. The electrodes must be transparent for the incident and diffracted beams. A 45_-cut SBN (0.75) crystal, however, is suitable for a lateral switch and requires a voltage of about 150 for a 1-mm-wide crystal. The electrodes do not need to be transparent.     

透镜初级球差的横向剪切干涉条纹研究

利用玻璃平行平板构成简单的横向剪切干涉仪可以观察到单薄透镜形成的准直光束的剪切干涉条纹,由干涉条纹分布求出对应的几何像差和离焦量.用焦距为190 mm的单薄透镜做实验,实验结果与计算机模拟结果符合,说明可以从剪切干涉条纹的分布求出透镜的轴向调整误差和初级球差.     

横向放大率法测定光具组的基点

介绍了用横向放大率法确定两薄透镜组成的光具组基点的原理和方法,该方法采用线阵光电耦合器件(CCD)测量物经光学系统成像的横向放大率,进一步提高了测量精度.     

Membrane-oxide semiconductor field-effect transistor (MOSFET) sensors

MOSFET-sensors can be considered as membrane-oxide-semiconductor field-effect transistors. MOSFETs can be divided into ISFETs, GasFETs, BioFETs, these sensors being sensitive to ion, gas, biomolecules respectively and there is also a possibility to fabricate MOSFET reference electrode (RefFET). The development and theoretical treatment of various type of MOSFET-sensors are presented in this paper.     

A Novel Anti-Inflammatory d-Peptide Inhibits Disease Phenotype Progression in an ALS Mouse Model

Amyotrophic lateral sclerosis (ALS) is a progressive neurodegenerative disease characterised by selective neuronal death in the brain stem and spinal cord. The cause is unknown, but an increasing amount of evidence has firmly certified that neuroinflammation plays a key role in ALS pathogenesis. Neuroinflammation is a pathological hallmark of several neurodegenerative disorders and has been implicated as driver of disease progression. Here, we describe a treatment study demonstrating the therapeutic potential of a tandem version of the well-known all-d-peptide RD2 (RD2RD2) in a transgenic mouse model of ALS (SOD1*G93A). Mice were treated intraperitoneally for four weeks with RD2RD2 vs. placebo. SOD1*G93A mice were tested longitudinally during treatment in various behavioural and motor coordination tests. Brain and spinal cord samples were investigated immunohistochemically for gliosis and neurodegeneration. RD2RD2 treatment in SOD1*G93A mice resulted not only in a reduction of activated astrocytes and microglia in both the brain stem and lumbar spinal cord, but also in a rescue of neurons in the motor cortex. RD2RD2 treatment was able to slow progression of the disease phenotype, especially the motor deficits, to an extent that during the four weeks treatment duration, no significant progression was observed in any of the motor experiments. Based on the presented results, we conclude that RD2RD2 is a potential therapeutic candidate against ALS.     

General analysis of the measurements of the lateral crystal lattice moduli of semicrystalline polymers by x-ray diffraction and the application to nylon 6

A mathematical representation based on a linear elastic theory is proposed by which one may investigate the dependences of molecular orientation and crystallinity on the crystal lattice moduli and linear thermal expansion coefficients in the direction perpendicular to the chain axis as commonly measured by x-ray diffraction. In the theoretical calculation, a previously introduced model was employed in which oriented crystalline phase is surrounded by oriented amorphous phase and the strains of the two phases at the boundary are identical. The mathematical analysis indicated that the lateral crystal lattice moduli and linear thermal coefficients as measured by x-ray diffraction may be different from the intrinsic crystal moduli and linear thermal coefficients of a crystal unit cell, depending on the structure of the polymer solid. The numerical calculation was applied to nylon 6. As a result, it may be confirmed that the lateral crystal lattice moduli measured by x-ray diffraction are sensitive to the morphology of the bulk speciments and close to the intrinsic crystal moduli if the morphology of the test specimen can be represented by a parallel model with respect to the original stretching longitudinal direction.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

横向外延过生长磷化铟材料的生长速率模型

分别考虑气相扩散和掩膜表面扩散过程，建立了金属有机化学气相沉积条件下横向外延过生长的速率模型. 在砷化镓衬底上外延磷化铟条件下，模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系. 通过讨论掩膜/窗口宽度的影响，说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素. 以上结论与实验结果一致. 关键词： 横向外延 生长模型 扩散 生长速率