全文获取类型
收费全文 | 1861篇 |
免费 | 468篇 |
国内免费 | 191篇 |
专业分类
化学 | 625篇 |
晶体学 | 11篇 |
力学 | 16篇 |
综合类 | 3篇 |
数学 | 43篇 |
物理学 | 1822篇 |
出版年
2024年 | 3篇 |
2023年 | 23篇 |
2022年 | 53篇 |
2021年 | 50篇 |
2020年 | 69篇 |
2019年 | 53篇 |
2018年 | 48篇 |
2017年 | 52篇 |
2016年 | 63篇 |
2015年 | 71篇 |
2014年 | 83篇 |
2013年 | 114篇 |
2012年 | 80篇 |
2011年 | 95篇 |
2010年 | 99篇 |
2009年 | 160篇 |
2008年 | 98篇 |
2007年 | 181篇 |
2006年 | 216篇 |
2005年 | 97篇 |
2004年 | 112篇 |
2003年 | 118篇 |
2002年 | 89篇 |
2001年 | 99篇 |
2000年 | 92篇 |
1999年 | 65篇 |
1998年 | 68篇 |
1997年 | 41篇 |
1996年 | 37篇 |
1995年 | 18篇 |
1994年 | 20篇 |
1993年 | 11篇 |
1992年 | 9篇 |
1991年 | 3篇 |
1990年 | 6篇 |
1989年 | 2篇 |
1988年 | 3篇 |
1987年 | 2篇 |
1986年 | 6篇 |
1985年 | 3篇 |
1984年 | 2篇 |
1982年 | 1篇 |
1981年 | 2篇 |
1980年 | 2篇 |
1979年 | 1篇 |
排序方式: 共有2520条查询结果,搜索用时 31 毫秒
1.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0). 相似文献
2.
3.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
4.
Hubert Grudziński 《Reports on Mathematical Physics》2004,53(2):317-328
The eigenvalues and eigenfunctions of an elementary 3-fermion 2-body operator 3P2g∧I1A3∑1≤i≤j≤3P2g(i, j)A3 acting on a 3-particle antisymmetric finite-dimensional Hilbert space have been found. Here Pg2 denotes the projection operator onto a 2-particle antisymmetric function g2, while A3 denotes the 3-particle antisymmetrizing operator. 相似文献
5.
R. Gerbaldo G. Ghigo G. Giunchi L. Gozzelino F. Laviano E. Mezzetti 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(3):297-300
We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB2. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the
material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis.
A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous
polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous
part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration,
at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic
granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a
network of strongly coupled Josephson junctions.
Received 31 May 2001 and Received in final form 5 December 2001 相似文献
6.
Long range one-dimensional ordering of lead phthalocyanine monolayer on InSb(1 0 0) (4 × 2)/c(8 × 2)
Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction. 相似文献
7.
Jun Fujii Giancarlo Panaccione Giorgio Rossi Giancarlo Trimarchi 《Surface science》2006,600(18):3884-3887
Bulk carbon impurities segregate at the Fe(1 0 0) surface and, upon thermal annealing, can form metastable surface phases with local and long range order and peculiar electronic properties. We present a surface science study of C-segregated Fe(1 0 0) with scanning tunneling microscopy, angle resolved photoemission, and ab initio calculations of the surface structure and electron states. In particular the c(3√2 × √2) structure, observed for 0.67 atomic layers of C segregated at the iron surface, is found to be due to self-organized carbon stripes made of zig-zag chains. The strong hybridization between C and Fe was observed in ARPES spectra. 相似文献
8.
The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD). 相似文献
9.
Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation. 相似文献
10.
就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究,并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结,其结电阻与面积的积 矢的绝对误差在10% 以内,隧穿磁电阻的绝对误差在7% 以内,样品的磁性隧道结性质具有较好的均匀性和一致性,可以满足研制磁随机存储器存储单元演示器件的基本要求.
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
4英寸热氧化硅衬底 相似文献