Novel ethero atoms containing polyesters based on 2,6‐naphthalendicarboxylic acid: A comparative study with poly(butylene naphthalate)

Poly(butylene naphthalate) (PBN), poly(diethylene naphthalate) (PDEN), and poly(thiodiethylene naphthalate) (PTDEN) were synthesized and characterized in terms of chemical structure and molecular weight. The polyesters were examined by TGA, DSC, and DMTA. All the polymers showed a good thermal stability, even though depending on chemical structure. At room temperature they appeared as semicrystalline materials; the effect of the introduction along the PBN polymer chain of ether oxygen atoms or sulfur ones was a lowering in the T_g value, a decrement of T_m, and a decrease of the crystallization rate. Changing in chemical structure also affects the main α absorption associated with the glass transition which moves to lower temperature and whose energetic requirements decrease. The results were explained as due to the presence of highly flexible C? S? C or C? O? C bonds in the polymeric chain. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1694–1703, 2007     

Anomalies in the Structural Chemistry of Silicon

In contrast to carbon, silicon fails to form multiple bonds that are stable at room temperature. Consequently molecules in which silicon exhibits coordination numbers (CN) of 1, 2, and 3 may only be obtained at very high or low temperatures. Under these conditions their structural features, including multiple bonds, resemble those of carbon. On the other hand, silicon is capable of forming various hexacoordinated compounds making use of its d orbitals. Nitrogen and oxygen bonded to silicon develop an unusual stereochemistry: planar nitrogen, nearly or completely linear oxygen, and considerable shortening of SiN, SiO, and SiF bonds are specific examples. N(SiR₃)₂ and CH₂SiR₃ ligands permit stabilization of unusually low CNs of many metals and give rise to amino and alkyl derivatives of unexpectedly high stability due to the particular electronic, the R₃Si group.     

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Plasma-chemical reduction of SiCl₄ in mixtures with H₂ and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H₂ ratio strongly affects the plasma composition as well as the deposition (r _D) and etch (r _E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiCl_x species, which are the precursors of the film growth. Chemisorption of SiCl_x and the reactive surface reaction SiCl_x+H–SiCl_(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr _D [SiCl_x][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H₂ ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.     

Cadmium colloids from non-aqueous solvents

Cadmium colloids have been prepared by Chemical Liquid Deposition (CLD). The metal is evaporated to yield atoms which are solvated at liquid nitrogen temperature, and upon warming, stable liquid colloids are formed with particle size ranging between 25–100 Å. Zeta potentials were calculated according to the conversion of Hunter and the Hückel equation, for ethanol and dimethyl sulphoxide. UV/VIS measurement of most of the black colloids showed absorption band around 280 nm. For comparison, we prepared CdS colloid with size 400–625 Å. The colloids are stable to oxidation in air and/or oxygen bubbling. The synthesis of colloids and films from Cd with acetone, 2-butanone, ethanol, 2-propanol, 2-methoxyethanol, DMF and DMSO is reported. Transmission Electron Microscopy (TEM) allows us to determine particle size.     

Influence of Carbon Multiple Treatments on the Photoelectrical Properties of Porous Glasses

We have studied the influence of multiple carbon treatments on the properties of silica porous glasses. Each step of each carbon treatment started with filling the voids of porous glass with carbon. During the following anneal carbon interacted with the walls of the voids. It was shown that low dimensional silicon clusters were formed inside the voids as a result of this reaction. In the experiments the photoluminescence spectra and conductivity of carbon-processed specimens were measured. The size-distribution of voids in porous glasses was calculated from absorption—desorption isotherms. An original technique was proposed that allowed to obtain the size-distribution of silicon clusters from the positions of peaks in the photoluminescence spectra. Correlation between the photoluminescence intensity and the sizes of pores was revealed. The observed oscillations in the shapes of the photoluminescence spectra in subsequent cycles of carbon treatment are explained by changes of the number of clusters corresponding to definite peaks in the size distribution spectra.     

超短光脉冲作用下的二能级原子

考虑到光场的振幅随时间分布的影响时,我们重新研究了光场与二能级原子相互作用的跃迁几率问题。在强光信号作用下,经过一定的数学代换后,上能级几率的求解可归结为类希尔方程求解;在弱光信号作用下,利用转动波近似(RWA),给出了二能级原子跃迁几率的解析表达式,并讨论了几种典型脉冲光场的分布。     

Electrolytical production of Ni + Mo + Si composite coatings with enhanced content of Si

Ni + Mo + Si composite coatings were prepared by co-deposition of nickel with molybdenum and silicon powders from a nickel solution in which Mo and Si particles were suspended by stirring. The layers have been deposited on a carbon steel substrate (St3S) under galvanostatic conditions. The content of Si in deposited layers was about 2-5 wt.% depending on deposition current density and the value of electric charge. For comparison Ni + Mo composite coatings were obtained under analogous current conditions. Composite coatings of enhanced Si content (15 wt.%) were deposited from an electrolyte in which 40 g/dm³ of Si covered with electroless plated nickel was dispersed. Deposition current density was equal 0.1 A/cm² and the value of electric charge Q = 500 C/cm². The thickness of the coatings was about 100-300 μm depending on their kind, electric charge and the deposition current density. Surface and cross-section morphology were investigated by scanning electron microscope (SEM). All deposited coatings are characterized by great, developed surface area. No internal stresses causing their cracking were observed. Chemical composition of the layers was determined by X-ray fluorescence spectroscopy (XRF) method and quantitative X-ray analysis (QXRD). It was stated, that the content of molybdenum and silicon in Ni + Mo + Si coatings depends on deposition current density and the amount of the powder in bath. The results of structural investigation of the obtained layers by the X-ray diffraction (XRD) method show, that they consist in crystalline Mo or Mo and Si phases built into Ni matrix. Moreover, Ni + Mo + Si composite coatings were modified by thermal treatment. It has been found that the thermal treatment of Ni + Mo + Si composite coatings caused that the new phases (NiSi, Mo₂Ni₃Si and Ni₆Mo₆C_1.06) were obtained.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.