Dynamique multi-contact d'un système de solides tridimensionnels rigidesMulti-contact dynamics of a set of three-dimensional rigid bodies

This study is in keeping with the general pattern of dynamical simulations of a set of rigid three-dimensional bodies submitted to unilateral contact constraints with dry friction. An exact formulation (respecting the contact and friction laws) of the problem of predicting the system accelerations and the contact status, in further evolution is proposed. A numerical treatment of this kind of nonlinear problem is presented. This approach is applied to a simple multi-contact example, and yields results in agreement with those of analytical and numerical type, known for this example. To cite this article: C. Le Saux et al., C. R. Mecanique 331 (2003).     

ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO

There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB₂/Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10⁻³ Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB₂. The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.     

Perfluorocarbon-Hydrocarbon Discrete Intermolecular Aggregates: An Exceptionally Short N⋯I Contact

1-Iodoperfluoroheptane ( 1a ) and tetramethylethylenediamine ( 2 , TMEDA) form the 2:1 ratio stable aggregate 3a and a similar behaviour is shown by 1-iodoperfluoroalkanes 1b-e and iodopentafluorobenzene 1f . These aggregates have been characterised in solution by 1 H/ 19 F-NMR spectroscopy and in the solid state through IR and single crystal X-ray diffraction. The determined structure of 3a (triclinic, a =6.2283(10), b =9.250(2), c =15.098(3) Å, f =81.369(5), g =81.397(5), n = 86.010(5), V =849.3(3) A m 3 , T =175(3) K, space group P-1 (No. 2), Z =1; d (calc)=2.167 g cm m 3 ; 4121 independent reflections, 3665 with I o >2( I o ); final refinement gave R1=0.0400, wR2=0.0901) showed the second shortest N > I interaction found in the crystallographic literature [2.762(3) Å] and the interdigitation of perfluorocarbon and hydrocarbon modules due to co-operative -C-H > F-C- interactions. Calculations to quantify these latter interactions have been also performed.     

An electrical characterization of a hetero-junction nanowire (NW) PN diode (n-GaN NW/p-Si) formed by dielectrophoresis alignment

This is a report on the electrical characterization of gallium nitride (GaN) nanowire (NW) p–n junction diodes. These diodes were formed by assembling n-GaN NWs on p-Si (1 0 0) substrates using alternating current (AC) dielectrophoresis (DEP). The AC DEP was optimized with a bias voltage of 15 V_p−p at a frequency of 1 kHz. The hetero-junction single GaN nanowire p-n diode (n-GaN NW/p-Si) showed well-defined current rectifying behavior with a forward voltage drop of 1.2–2.0 V at a current density of 10–60 A/cm². The GaN nanowire p–n diodes had a high parasite resistance in the range of >470 kΩ. We observed that these high resistances were mostly the result of the metal contacts to the n-GaN NWs. We also found that these parasite resistances were reduced by the formation of an additional capping layer on the top of the n-GaN NW as well as high temperature annealing.     

Charge transport at the protein–electrode interface in the emerging field of BioMolecular Electronics

The emerging field of BioMolecular Electronics aims to unveil the charge transport characteristics of biomolecules with two primary outcomes envisioned. The first is to use nature's efficient charge transport mechanisms as an inspiration to build the next generation of hybrid bioelectronic devices towards a more sustainable, biocompatible and efficient technology. The second is to understand this ubiquitous physicochemical process in life, exploited in many fundamental biological processes such as cell signalling, respiration, photosynthesis or enzymatic catalysis, leading us to a better understanding of disease mechanisms connected to charge diffusion. Extracting electrical signatures from a protein requires optimised methods for tethering the molecules to an electrode surface, where it is advantageous to have precise electrochemical control over the energy levels of the hybrid protein–electrode interface. Here, we review recent progress towards understanding the charge transport mechanisms through protein–electrode–protein junctions, which has led to the rapid development of the new BioMolecular Electronics field. The field has brought a new vision into the molecular electronics realm, wherein complex supramolecular structures such as proteins can efficiently transport charge over long distances when placed in a hybrid bioelectronic device. Such anomalous long-range charge transport mechanisms acutely depend on specific chemical modifications of the supramolecular protein structure and on the precisely engineered protein–electrode chemical interactions. Key areas to explore in more detail are parameters such as protein stiffness (dynamics) and intrinsic electrostatic charge and how these influence the transport pathways and mechanisms in such hybrid devices.     

A tuberculosis model: The case of ‘reasonable’ and ‘unreasonable’ infectives

Epidemics such as tuberculosis (TB), can be represented by a finite number of states and transition rules that govern the spread of the disease in each discrete time step. This paper uses a graph theoretic approach to investigate TB interactions in a community where infectives are categorized. A threshold value, , for ‘reasonable’ infectives is proposed. The results show that an epidemic will not ensue as long as the threshold is surpassed. Simulations presented show that unreasonable infectives can amplify the epidemic.     

Conductance histograms and conducting channels in atomic-scale metallic contacts

Properties of the conductance and transport channels of atomic-scale contacts are discussed within the free electron model. In agreement with recent experiments, we find that, owing to the contribution of evanescent channels, even when the conductance is close to an integer number N of conductance quanta more than N channels may contribute significantly to the current. We show that the observation of peaks at integer multiples of G₀ in conductance histograms is not a signature of conductance quantization of individual contacts. However, the observed peaks can still be associated to the quantum nature of electron transport in metallic contacts.     

High performance of thin nano-crystalline ZrN diffusion barriers in Cu/Si contact systems

A thermally stable thin diffusion barrier in Cu/Si contacts was developed using a thin nano-crystalline ZrN film. The Cu/ZrN/Si contact system using a reactively sputtered ZrN barrier with 20 nm in thickness consisting of several to 10 nm grains tolerated annealing at 600 °C for 1 h without any Cu penetration through the barrier. This was interpreted that the scarce structural change in the prepared nano-crystalline ZrN film due to annealing was favorite for the thermal stability of thin barrier application.     

电接触热过程有限元模型在精密机电元件中的应用

本文论述了轻电可分合接触热过程有限元模型的构造，系统论述了精密机电元件电接触热过程计算模型的构造方法，并给出了小电流继电器中的一个应用实例。