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1.
Giuseppe Coppola Andrea Irace Giovanni Breglio Mario Iodice Luigi Zeni Antonello Cutolo Pasqualina M. Sarro 《Optics and Lasers in Engineering》2003,39(3):317-332
In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices. 相似文献
2.
3.
I. A. Anoshko V. S. Ermachenko L. E. Sandrigailo 《Journal of Applied Spectroscopy》2007,74(1):102-106
We present the results of a spectroscopic study of a nonequilibrium plasma in a Hall accelerator, in particular for such an
important parameter as the electron temperature. For the studied conditions, we used the semicoronal equilibrium model, which
relates the intensity ratios for two successive ionization steps for the same element.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 93–96, January–February, 2007. 相似文献
4.
5.
X.X. Guo 《Surface science》2004,549(3):211-216
We studied parallel conductivities of pure BaF2 films with thicknesses ranging from 35 to 300 nm, epitaxially grown on Al2O3(0 1 2) substrates by molecular beam epitaxy technique. The overall conductivities of the films are found to increase with decreasing thickness. The detailed investigation of the overall conductance as a function of the thickness permits the deconvolution of bulk and boundary effects, the latter being attributed to distinct space charge effects in the interface between BaF2 film and Al2O3 substrate. The (extrinsic) Debye length (λ) is estimated to be about 8 nm at T=593 K, which corresponds to an impurity content of 1018/cm3 (singly ionized dopant assumed). This is consistent with the fact that we observed a constant boundary contribution for all investigated films (film thickness >4λ). It is also consistent with the Debye length observed in a previous report on CaF2/BaF2 heterolayers fabricated by the same technique, in which the low temperature enhancement was also attributed to space charges in BaF2 [Nature 408 (2000) 946]. Only at low temperatures (below 370 °C), the conductance seems to be influenced by strain effect. 相似文献
6.
在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍Gd的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化. 相似文献
7.
A. F. G. Monte M. A. G. Soler S. W. da Silva B. B. D. Rodrigues P. C. Morais A. A. Quivy J. R. Leite 《Physica E: Low-dimensional Systems and Nanostructures》2004,23(3-4):466
We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In0.10Ga0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle. 相似文献
8.
Taking both the heterogeneous catalytic processes, including the surface formation of particles with excited internal degrees of freedom, and the processes of multicomponent diffusion and heat transfer in the MESOX apparatus fully into account makes it possible to obtain a recombination coefficient and an accommodation coefficient of the oxygen-atoms-on-quartz recombination energy which are in good agreement with the experimental data. The heterogeneous catalysis model constructed can be used effectively for predicting the heat fluxes to the surface of reentry vehicles on their entry into the Earth’s atmosphere. 相似文献
9.
本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。 相似文献
10.
After describing simplified equations exspressing the temparature dependency of the viscosity of carrier gases (helium, nitrogen and hydrogen ) relative to a base value, absolute relationships based on the kinetic theory of gases are discussed. Comparative data obtained using various calculation methods are given and are compared to measured values. Based on the kinetic relationshipsm, of viscosity. Finally, the influence of pressure on the viscosity is also briefly discussed. As a supplement, Viscosity data are tabulated for the three gases in the range of 0°C to 400°C in increments of 2 K, calculated using the kinetic relationships. 相似文献