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排序方式: 共有755条查询结果,搜索用时 15 毫秒
1.
贝克曼Allegra^TM 21R型超高速离心机开机后,操作面板上出现错误代码“28”,离心机不旋转。离心机的电机采用无刷感应驱动,由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2,并更换已烧毁的栅极电阻后。开机试验,仪器恢复正常。 相似文献
2.
We demonstrate the potential of femtosecond two-color pulse interferometry for in vitro optical glucose monitoring, by dispersion of the group refractive index in a glucose solution sample with respect to a red-color
light and a blue-color light. By comparison with femtosecond one-color pulse interferometry, the basic performance of the
present system with regard to sensitivity, quantitativeness, and tolerance to surrounding disturbances, is evaluated. The
resulting accuracy and precision of glucose determination are 77 and 118mg/dl for 10-mm-sample-thickness, respectively. This
near-common-path configuration of the two-color pulse light provides good stability to fluctuations of sample temperature,
which is important in clinical applications. Considering the performance of femtosecond two-color pulse interferometry as
an optical glucose sensor, a suitable measurement site for in vivo optical glucose monitoring is discussed. 相似文献
3.
用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Qbd)和击穿电压(Voltage to Breakdown, Vbd). 研究结果表明,低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小,而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大,击穿电压测试值也发现与击穿电量
关键词:
薄氧
可靠性
击穿电压
击穿电量 相似文献
4.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献
5.
6.
The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si3N4/SiO2 stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 1015 cm?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O2+ and Cs+ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O2+ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As+‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs+ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O2+ primary ions was found to be effective, and 0.25 keV O2+ at normal incidence provided a more reliable result than Cs+ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献
7.
Wentian Li 《Journal of statistical physics》1992,68(5-6):829-882
Dynamical systems with nonlocal connections have potential applications to economic and biological systems. This paper studies the dynamics of nonlocal cellular automata. In particular, all two-state, three-input nonlocal cellular automata are classified according to the dynamical behavior starting from random initial configurations and random wirings, although it is observed that sometimes a rule can have different dynamical behaviors with different wirings. The nonlocal cellular automata rule space is studied using a mean-field parametrization which is ideal for the situation of random wiring. Nonlocal cellular automata can be considered as computers carrying out computation at the level of each component. Their computational abilities are studied from the point of view of whether they contain many basic logical gates. In particular, I ask the question of whether a three-input cellular automaton rule contains the three fundamental logical gates: two-input rules AND and OR, and one-input rule NOT. A particularly interesting edge-of-chaos nonlocal cellular automaton, the rule 184, is studied in detail. It is a system of coupled selectors or multiplexers. It is also part of the Fredkin's gate—a proposed fundamental gate for conservative computations. This rule exhibits irregular fluctuations of density, large coherent structures, and long transient times. 相似文献
8.
9.
A scheme is proposed to controll the decoherence of
three-level rf-SQUID qubit with asymmetric potential by designing an
external electric circuit for superconductive flux qubit. The
results show that it may not only raise the gate speed but also extend
decoherence time for a three-level structure. 相似文献
10.
利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案. 相似文献