High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

First principle calculations study of AlN surface terminal structure evolution under different conditions

The surface structure and properties of aluminum nitride (AlN) play an important role in many applications. Using the first principle calculations method, we analyzed the surface terminal structure of AlN and its evolution under different conditions by determining the surface energy, adsorption energy, and evaporation energy of the Al and N terminals on the AlN(0001) surface. Our results show that the reason why the N terminal is less stable than the Al terminal is not only because of its high surface energy but also because its adsorption performance is extremely sensitive to the adsorption position. The surface N atoms combine to form N₂ molecules that escape during the evaporation process at high temperature. After surface N atoms escape, the AlN surface structure reconstitutes to form a hexagonal closest packing (HCP)–like structure, and the energy barrier for the reconstructing process is 3.2 eV. This shows that the structure and form of the AlN(0001) terminals depend on the environmental conditions.     

气相生长氮化铝单晶的新方法

通过在钨坩埚盖开小孔的方法改变氮化铝结晶衬底上的温度场分布,在开孔处形成局部低温区;由于孔的几何尺寸的限制和氮化铝晶体生长的各向异性,开孔处的氮化铝晶体单晶化;随后,开孔处的单晶起籽晶的作用,逐渐长成较大尺寸、较高质量的氮化铝单晶.目前用该方法已经制备出直径大于2mm的氮化铝单晶体.     

Structure evolution and mechanical properties enhancement of Al/AlN multilayer

A set of Al/AlN multilayers with various modulation periods were prepared using DC magnetron sputtering method. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the films was investigated with grazing angle X-ray diffraction (GAXRD). LAXRD results indicate that well-defined multilayer modulation structures are formed for the relatively larger modulation periods. However, the loss of mutilayered structure is detected in the multilayer with low modulation period. A very wide amorphous peak is observed in multilayer with modulation period of 4 nm. The multilayers show obvious crystallization at larger modulation periods, however, the diffraction peaks are much wider than the Al single layer because of the interruption of the continuous columnar grain growth by alternating deposition processes. Nanoindentation experiments were performed to study the mechanical properties as a function of multilayer modulation period. It is found that the hardness of the multilayers is greater than the hardness calculated from rule of mixtures. With the modulation periods adjusted, the multilayers are even harder than its hard component (AlN). A maximum hardness of 24.9 GPa, about 1.9 times larger than its hard component (AlN) and 3.7 times larger than the hardness calculated from the rule of mixtures, is found at the multilayer with modulation period of 16 nm. The wear test results show that the multilayers possess lower and stable friction coefficient, and superior wear properties.     

A general solution to the Schrödinger–Poisson equation for a charged hard wall: Application to potential profile of an AlN/GaN barrier structure

A general, system-independent, formulation of the parabolic Schrödinger–Poisson equation is presented for a charged hard wall in the limit of complete screening by the ground state. It is solved numerically using iteration and asymptotic boundary conditions. The solution gives a simple relation between the band bending and sheet charge density at an interface. Approximative analytical expressions for the potential profile and wave function are developed based on properties of the exact solution. Specific tests of the validity of the assumptions leading to the general solution are made. The assumption of complete screening by the ground state is found be a limitation; however, the general solution provides a fair approximate account of the potential profile when the bulk is doped. The general solution is further used in a simple model for the potential profile of an AlN/GaN barrier structure. The result compares well with the solution of the full Schrödinger–Poisson equation.     

AlN纳米线宏观阵列的制备

借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线 关键词： AlN纳米线阵列 模板法 CVD法 SEM