Mo/GaAs Schottky barriers prepared by d.c. sputtering

Summary Mo/GaAs Schottky barriers have been prepared by d.c. sputtering, for different values of the sputtering voltage. Current-voltage and capacitance-voltage measurements show that these barriers can have very good properties (near one ideality factor, very low inverse saturation current) if suitable preparation conditions are chosen. A detailed study of the current-voltage characteristics as a function of the temperature allows us to analyse the carrier transport mechanisms and to correlate them to the preparation conditions. The experimental results show that the behaviour of the Mo/GaAs Schottky barriers, prepared by d.c. sputtering, can be successfully explained on the basis of the unified defect model proposed for the GaAs schottky barriers.

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Riassunto In questo lavoro vengono presentati risultati concernenti barriere Schottky Mo/GaAs preparate mediante ?sputtering? in continua, per diversi valori delle tensioni di ?sputtering?. Le misure di caratteristiche corrente-tensione e capacità-tensione mostrano che è possibile ottenere barriere con buone caratteristiche elettriche (fattore di idealità prossimo ad uno, corrente di saturazione inversa molto bassa), purché siano scelte le giuste condizioni di deposizione. è stato anche condotto uno studio dettagliato delle ricavare informazioni sul meccanismo di trasporto dei portatori di carica. I risultati sperimentali mostrano che il comportamento di questo tipo di barriere è perfettamente spiegabile nell'ambito del modello unificato dei difetti nelle barriere Schottky nel GaAs.

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Резюме Барьеры Шоттки Mo/GaAs приготовлены с помощью распыления при различных значениях напряЗения распыления. Измерения зависимостей тока от напряЗения и емкости от напряЗения показывают, что зти барьеры могут иметь очень хорощие свойства, если выбираются соответствующие условия приготовления. Подробное исследование вольт-амперных характеристик в зависимости от температуры позволяет проанализировать механизмы переноса заряда и связать их с усломиями приготовления. Зкспериментальые результаты показывают, что поведение барьеров Шоттки Mo/GaAs, приготовленных с помощьюDC распыления, моЗно успешно объяснить на основе единой модели дефектов, предлоЗенной для барьеров Шоттки GaAs.

     

Bonding of a viscoelastic periodic rough surface to a rigid layer

A theoretical analysis is performed for the study of the bonding of a viscoelastic rough surface to a rigid substrate. The mechanics of contact and adhesion are studied with the Dugdale–Barenblatt model for surface interaction. Exact solutions are obtained for arbitrary surface profiles and loading histories. Detailed solutions are given for a power‐law viscoelastic material. This solution is used to determine the time for the self‐bonding of surfaces (solid sintering under zero load). The time to self‐bonding is shown to be extremely sensitive to the aspect ratio of the asperities. A closed form expression is derived for the time needed to achieve full contact when the surfaces are compressed with a load that increases linearly with time. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 545–561, 2002; DOI 10.1002/polb.10113     

浅谈从保守力做功到势能概念的引入

通过保守力做功到势能概念的引入方法的介绍，并从保守力做功与势能的定量关系出发对势能的定义及特点进行了讨论．     

Physisorption on a metal surface probed by surface state resonant second harmonic generation

Second harmonic generation from a Ag(1 1 0) surface, resonantly enhanced by the surface state transition at 1.74 eV, is found to be greatly affected by submonolayer adsorption. The physisorption of water or methanol causes a monotonic, exponential-like decay of the SH intensity that can be described by a model treating the adsorbate as a delocalized, weak perturbation in the resonantly enhanced SHG. On the other hand weak chemisorption of aniline generates a complex response in the SH intensity that eludes the predictability of the model. Analysis of the SH intensity has determined that water or methanol adsorption causes an upward shift in the minimum energies of the pair of surface states on Ag(1 1 0) and an increase in the transition linewidth. The sensitive response of the surface states to the presence of adsorbates provides a basis for SHG resonantly enhanced by surface state transition as a highly sensitive probe of submonolayer coverage.     

Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study

An electron spectroscopic investigation (photoemission and X-ray induced Auger emission) of the near surface region of undoped CVD polycrystalline diamond is presented. The focus is on compositional and structural changes brought about by desorption processes (either photon or thermally induced) and on the associated changes in the material’s properties. Photon and low temperature induced desorption of O containing species, resulting in a clean H terminated diamond surface, is found to decrease the diamond surface conductivity (SC) and to lower the vacuum energy. Electron emission is highly favoured from such a surface, as witnessed by its negative electron affinity (NEA). H desorption at T ≈ 900 °C leads to surface reconstruction and causes both the vacuum energy to rise and the electron energy levels to bend downwards. As a result, the diamond electron affinity is driven from negative to positive. At T = 1050 °C, the first stages of a graphitization process that propagates from the surface inwards are revealed by an increasing conductivity in the film surface region, though still not by the development of graphitic features in the spectra.     

自适应多重网格法与超松弛法的比较

多重网格法(Multiple Grid Method,简称M-G方法)是近年来出现的快速方法之一,本文在M-G方法中采用自适应控制层间转换的技术,并将自适应M-G方法与G-S迭代方法及SOR迭代方,法进行了比较。其计算结果表明,自适应M-G方法的计算量比G-S迭代及SOR迭代少得多,当M-G方法所用层数为4-6层,这种优越性就更加明显,且自适应M-G方法中选取控制参数有很大的灵活性。     

Impact‐specific essential work of fracture of maleic anhydride‐compatibilized polypropylene/elastomer blends and their composites

Charpy drop‐weight‐impact and essential work of fracture (EWF) characteristics of maleic anhydride (MA)‐compatibilized styrene–ethylene butylene–styrene (SEBS)/polypropylene (PP) blends and their composites reinforced with short glass fibers (SGFs) were investigated. MA was grafted to either SEBS copolymer (SEBS‐g‐MA) or PP (PP‐g‐MA). The mPP blend was prepared by the compounding of 95% PP and 5% PP‐g‐MA. Drop‐weight‐impact results revealed that the mPP specimen had an extremely low impact strength. The incorporation of SEBS or SEBS‐g‐MA elastomers into mPP improved its impact strength dramatically. Similarly, the addition of SEBS was beneficial for enhancing the impact strength of the SGF/SEBS/mPP and SGF/SEBS‐g‐MA/mPP hybrids. A scanning electron microscopy examination of the fractured surfaces of impact specimens revealed that the glass‐fiber surfaces of the SGF/SEBS/mPP and SGF/SEBS‐g‐MA/mPP hybrids were sheathed completely with deformed matrix material. This was due to strong interfacial bonding between the phase components of the hybrids associated with the MA addition. Impact EWF tests were carried out on single‐edge‐notched‐bending specimens at 3 m s^?1. The results showed that pure PP, mPP, and the composites only exhibited specific essential work. The nonessential work was absent in these specimens under a high‐impact‐rate loading condition. The addition of SEBS or SEBS‐g‐MA elastomer to mPP increased both the specific essential and nonessential work of fracture. This implied that elastomer particles contributed to the dissipation of energy at the fracture surface and in the outer plastic zone at a high impact speed of 3 m s^?1. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 1881–1892, 2002     

A new proof of finite moment conditions for GI/G/1 busy periods

A generalization of the GI/G/1 queue is considered where the service time of the nth customer and the inter-arrival time between arrivalsn andn+1 may be dependent random variables. New proofs are obtained of finite moment conditions for busy periods and the ladder epochs of a corresponding random walk. The method of proof, which is much different from the usual ones, directly relates busy period moments to virtual and actual delay moments.