Substitution Effects in Zintl Phases: Synthesis and Crystal Structure of the Novel Phases Ae3Sn4−xBi1+x (x ≤ 1; Ae = Sr,Ba) Containing Shubnikov‐Type Nets $^{2}_{\infty}\rm [Sn_{4-x}Bi_{x}]$

The compounds Ae₃Sn_4?xBi_1+x (Ae = Sr, Ba) with x < 1 have been synthesized by solid‐state reactions in welded Nb tubes at high temperature. Their structures were determined by single crystal X‐ray diffraction studies to be tetragonal; space group I4/mcm (No. 140); Z = 4, with a = 8.968(1) Å, c = 12.859(1) Å for Sr₃Sn_3.36Bi_1.64(3) ( 1 ) and a = 9.248(2), c = 13.323(3) Å for Ba₃Sn_3.16Bi_1.84(3) ( 2 ). The structure consists of two interpenetrating networks formed by a 3D Ae_6/2Bi substructure (anti‐ReO₃ type) forming the host, and layers of interconnected four‐member units [Sn_4?xBi_x] with “butterfly”‐like shape as the guest. According to the Zintl‐Klemm concept, the compounds are slightly electron deficient and will be charge balanced for x = 1. The electronic structures of Ae₃Sn_4?xBi_1+x calculated by the TB‐LMTO‐ASA method indicate that the compounds correspond to ideal semiconducting Zintl phases with a narrow band gap for x = 1 (zero‐gap semiconductor). The origin of the slight deviation from the optimal electron count for a valance compound is discussed.     

Spectroscopic evidence for a dinitrogen complex of gallium and estimation of the Ga-N2 bond strength

Matrix-isolation experiments were performed to study the interaction between Ga atoms and N2 by using Raman and UV/Vis spectroscopies for detection and analysis. It was revealed that a weak complex is formed, for which resonance Raman spectra were obtained. Several overtones were sighted, allowing a rough estimate of the Ga-N2 fragmentation energy to be made (approximately 19 kJ mol(-1)). The excitation profile obtained from the spectra at different laser wavelengths agrees with the UV/Vis spectrum and shows that the complex exhibits an electronic transition at around 410 nm. At the Ga atom, this transition can be described as a 2S<--2P or 2D<--2P excitation, which is red-shifted from its position for free Ga atoms (approximately 340 nm and 270 nm for 2S<--2P and 2D<--2P, respectively) as a result of N2 complexation. The effect of complexation involves, therefore, only slight stabilization of the 2P ground state but relatively strong stabilization of the excited (2)S state. Accordingly, for the Ga atom in its excited 2S state, the Ga-N2 bond energy can be estimated to be around 79 kJ mol(-1).     

Correlation corrected band structures of homopolypeptides v. B3LYP band structures of 19 homopolypeptides

Ab initio B3LYP crystal orbital (CO) calculations have been performed on the 19 homopolypeptides (PolyGly, PolyAla, PolySer, PolyThre, PolyLeu, PolyiLeu, PolyVal, PolyAspAc, PolyAsp, PolyGlutAc, PolyGlut, PolyHist, PolyProl, PolyCyst, PolyMeth, PolyTyr, PolyPhenAla, PolyArg, and PolyLys) in their β pleated sheet conformation. Keeping the main chain conformation fixed as in PolyGly, the side chain geometries were optimized. For the calculation 2n+1 different k points were used with n = 8 for the case of simpler and n = 10 for more complicated side chains. The basis set applied was the double ζ one of Clementi. According to the results obtained, the conduction bands are shifted upward and the valance band downward, compared with the results of previous BLYP 1 and LDA 7 CO calculations. The bandwidths are similar to the previous cases. The band edges are in many cases not at the endpoints of the first Brillouin zones, causing nonmonotonous dispersion of both the conduction bands (CB) and the valance bands (VB), respectively. The fundamental gap values due to the upward shifts of the CB and downward shifts of the VB are substantially larger than in the case of our previous DFT CO calculations (values 6.0–7.0 eV). They are very close to the gap values, which can be estimated on the basis of experimental ultraviolet (UV) spectra of some homopolypeptides and on the basis of intermediate exciton theoretical calculations (6.5–7.5 eV). These surprisingly good results for the gaps are due to the compensation of errors (LDA or BLYP gives too small and simple HF provides too large gap values) in the B3LYP method. The admixture of the exact HF exchange with a weight of 0.19 obviously compensates the self interaction error occurring in the LDA or BLYP methods. This article discusses whether/how this result could be established by other B3LYP CO calculations on simple polymer chains and on stacked systems (e.g., nucleotide base stacks). Furthermore, a comparative analysis of the ground state DFT methods, the HF method and of the optimized effective potential method could throw more light on our successful theoretical results for the gaps of the homopolypeptides. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Molecular electrochemistry of hydrofullerenes C70H36—46

Electrochemistry of a mixture of hydrofullerenes C₇₀H_36—46 composed of C₇₀H₃₆, C₇₀H₃₈, C₇₀H₄₄, and C₇₀H₄₆ (50, 20, 14, and 15%, respectively) was studied by cyclic voltammetry in THF and CH₂Cl₂ in the –43—–13 °C temperature range. Two cathodic peaks, namely, one-electron reversible (E° = –3.16 V (Fc^0/+), Fc is ferrocene) and irreversible (E _p = –3.37 V (Fc^0/+)) were observed for this mixture in THF. The irreversible broad oxidation peak (E _p = 1.22 V (Fc^0/+)) was observed in CH₂Cl₂. The reversible reduction peak (E° = –3.16 V) and irreversible oxidation peak (E _p = 1.22 V) were attributed to the most stable hydrofullerene C₇₀H₃₆. The irreversible reduction (E _p = –3.37 V) and oxidation (E _p = 1.22 V) peaks were attributed to hydrofullerenes C₇₀H_44—46 with a higher degree of hydrogenation. The values of an electrochemical gap, which is an analog of the energy gap (HOMO—LUMO), are 4.38 and 4.59 V for C₇₀H₃₆ and C₇₀H_44—46, respectively, and indicate that these hydrofullerenes are sufficiently hard molecules with low reactivity in redox reactions.     

On the validity of the Mark-Houwink relationship at very high molecular weights

Adsorption-entanglement layers have been shown to interfere with the measurement of intrinsic viscosity of high-molecular weight (M _w10⁶) atactic polystyrene solutions. Values of the intrinsic viscosity, corrected for the pressure of any such layers are reported. The Mark-Houwink relationship is thus shown to fail at high molecular weights.     

SYNTHESIS, CHARACTERIZATION AND ANTIMICROBIAL PROPERTIES OF 4-[（4-HYDROXYBENZYLIDENE） AMINO] PHENOL AND ITS POLYMER

The oxidative polycondensation reaction conditions of 4-[(4-hydroxybenzylidene)amino]phenol(4-HBAP)were studied with H_2O_2,air oxygen and NaOCl in an aqueous alkaline medium between 50 and 90℃.The structures of the obtained monomer and polymer were confirmed by FT-IR,UV-Vis,~1H-and ~(13)C-NMR and elemental analysis.The characterization was made by TG-DTA,size exclusion chromatography(SEC)and solubility tests.At the optimum reaction conditions,the yield of poly[4-(4-hydroxybenzylidene amino)phenol](P-4-HBAP)was found to be 48.3%(for H_2O_2 oxidant),80.5%(for air O_2 oxidant)and 86.4%(for NaOCl oxidant).According to the SEC analysis,the number-average molecular weight(M_n),weight-average molecular weight(M_w)and polydispersity index(PDI)values of P-4-HBAP was found to be 8950,10970 g mol~(-1) and 1.225,respectively,using H_2O_2;and 11610,15190 g mol~(-1) and 1.308 respectively, using air O_2 and 7900,9610 g mol~(-1) and 1.216,respectively,using NaOCl.According to TG-DTA analyses,P-4-HBAP was more stable than 4-HBAP against thermal decomposition.The weight loss of P-4-HBAP was found to be 49.27% at 1000℃. The highest occupied molecular orbital(HOMO)and the lowest unoccupied molecular orbital(LUMO)values calculated from electrochemical measurement.Electrochemical energy gaps(E′_g)of 4-HBAP and P-4-HBAP were found to be-5.46, -5.28;-2.26,-2.67;3.20 and 2.61 eV,respectively.According to UV-Vis measurements,optical band gap(E_g)of 4-HBAP and P-4-HBAP were found to be 3.34 and 3.01 eV,respectively.Also,antimicrobial activities of 4-HBAP and P-4-HBAP were examined against selected some bacteria.The electrical conductivity of the polymer was measured after doping with iodine.     

Separation of Semiconducting Single‐Walled Carbon Nanotubes by Using a Long‐Alkyl‐Chain Benzenediazonium Compound

We designed and synthesized 4‐dodecyloxybenzenediazonium tetrafluoroborate ( 1 ), which preferentially reacts with metallic single‐walled carbon nanotubes (SWNTs) by kinetic control. We first determined the suitable experimental conditions for the preferential reaction of 1 with individually dissolved SWNTs by monitoring the decrease in absorbance for the metallic SWNT in the range of 400–650 nm in the absorption spectrum of the SWNTs. The reacted SWNTs were thoroughly rinsed with THF to obtain THF‐insoluble SWNTs. The Raman spectrum of the THF‐insoluble SWNTs showed a strong peak near 180 cm^?1, which corresponds to a semiconducting breathing band. The metallic breathing bands (≈220 cm^?1) and Breit–Wingner–Fano (BWF) modes (1520 cm^?1) corresponding to the metallic SWNTs were much weaker than those of the pristine SWNTs. We also confirmed that metallic peaks in the range of 400–650 nm in the absorption spectrum of THF‐insoluble SWNTs that were individually dissolved in an aqueous micelle of sodium cholate were almost nondetectable. All the results indicate that the THF‐insoluble SWNTs are semiconducting.     

Synthesis,structural and electrical characterization of PbS NCs in titania sol–gel films

Nanocrystals of lead sulfide were grown in TiO₂ (titania) thin films prepared by a sol-gel process. The synthetic procedure as well as the structural, optical, and electrical properties of the films are demonstrated. The structures and morphology of PbS nanocrystals were analyzed using HRTEM, SAED, AFM, HRSEM, XRD and EDAX elemental analysis technique. When the concentration of PbS in the titania matrix is 20 mol%, PbS NCs with a diameter of 2.0 nm are created. At a higher PbS concentration (> 40 mole%) in the titania matrix, PbS NCs and PbS clusters are created not only within the TiO₂ film but also on the external surface of the TiO₂ film. By increasing the PbS concentration up to 50 mol%, PbS nanocrystals of 6–8 nm in diameter are formed within the titania film and PbS clusters with a base size of about 100 nm² and a height up to about 20 nm were self assembled on the external surface of TiO₂ film. Quantum size effect and band gap energies were obtained from shifts of the absorption edge. For electrical measurements, PbS–TiO₂ films were deposited on an ITO/glass substrate, and then covered with gold contact. The electrical properties of ITO/PbS NCs–TiO₂/Au and ITO/PbS NCs–TiO₂/PbS cluster/Au structures were studied. I–V characteristics of the one layer structure are nearly linear and symmetric, while those of the two-layer structure exhibit rectifying behavior.     

Tin colloids and metal-metal oxide films prepared by chemical liquid deposition. III

Colloids and thin metal-metal oxide films have been prepared by a method we call Chemical Liquid Deposition (CLD). The metal is evaporated to yield atoms which are solvated at liquid nitrogen temperature, and upon warming stable liquid colloidal solutions are formed. In the case of tin, the particle size of these colloids ranges between 200–500 Å. Zeta potentials were calculated by a Hückel approximation for most of these negatively charged particles. Upon solvent removal, colloidal particles coalesce to form films, which contain some residual solvent. The synthesis of colloids and films from Sn with acetone, 2-butanone, THF, ethanol, 2-propanol, DMF and DMSO is reported. FTIR, High Resolution Mass Spectrometry, Thermogravimetric Analyses (TGA) and Scanning Electron Microscopy (SEM) film characterization has been carried out. These studies indicate that solvents are incorporated into the films. The resistivity studies showed that they more behave as semiconductors than pure metals. TGA studies reveal that loss of weight occurs within 200–500°C. The films are very stable with 5–10% weight loss at 550°C. SEM reveals their surface morphology. Mössbauer gives information about oxidation states of some tin films.     

Synthesis and characterization of La4MnCu6S10

The new quaternary sulfide La₄MnCu₆S₁₀ has been synthesized by the reaction of La₂S₃, MnS, and CuS₂ at 1223 K. This compound crystallizes in a new structure type in space group of the triclinic system with one formula unit in a cell of dimensions at 153 K of a=6.6076(3) Å, b=7.3247(3) Å, c=8.7844(4) Å, α=83.457(1)°, β=74.398(1)°, γ=89.996(1)°, and V=406.61(3) Å³. The structure of La₄MnCu₆S₁₀ consists of a three-dimensional framework of interconnected LaS₇ monocapped trigonal prisms, MnS₆ octahedra, and CuS₄ tetrahedra. Band gaps of 2.49 eV in the [100] direction and 2.53 eV in the [001] direction have been derived from optical absorption measurements on a La₄MnCu₆S₁₀ single crystal.