Nanocrystalline ceramic films for efficient conversion of light into electricity

Transparent nanocrystalline films of oxide semiconductors such as TiO₂ and Fe₂O₃ have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO₂ films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.     

小间隙高放大多丝室及其放电机制

对以强猝灭气体工作的小间隙多丝室及其放电机制进行了研究,实验表明,因为工作在饱和模式区,这种室同时具有很高的气体放大和相当快的时间特性.文中探讨了放电机制,雪崩中空间电荷效应以及电离光子的产生和作用是重要的因素,而其中后一因素又受到强猝灭气体的抑制.     

光子晶体的原理与应用

光子晶体是一种在微米、亚微米等光波长量级上折射率呈现周期性变化的介质材料，它使某些频率范围内的光子态密度大大降低．甚至完全形成光子禁带．本文介绍了光子晶体的原理、制备及应用．     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields

We present a theoretical and experimental study of electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields. Results are based on an 8-band Pidgeon–Brown model generalized to include finite k_z effects and s(p)–d exchange interaction between itinerant carriers and Mn d-electrons. The e-active transitions in the valence band in p-doped samples take place due to the nature of multiple valence bands (heavy and light holes). We have calculated the absorption spectra in high magnetic fields and identified optical transitions which contribute to the cyclotron resonance for both e-active and h-active polarizations. Calculations show agreement with experimental results.     

Power scaling of printed-circuit-board preionized TEA CO2 laser up to 3.6 kW

A high average power, high-repetition-rate TEA CO₂ laser employing printed-circuit-board preionizer is described. The power scaling of this preionization configuration has been demonstrated. The average output power reaches 3.6 kW at pulse repetition rate of 180 pps. Furthermore, the scaling-up ability of the rotating spark gap as high-voltage switch for high-average-power gas laser has been validated.     

半导体与超晶格的数学模型及其分析Ⅰ:模型

本文论及半导体与超晶格的数学模型方法的一些新近发展动态。介绍了半导体与超晶格的一些背景材料并给出了半导体宏观模型间的层次框架。超晶格中载流子传输的SHE扩散模型也被观察。     

The design of molecules containing planar tetracoordinate carbon

A novel preference for planar tetracoordination was observed over the conventional tetrahedral arrangement in a new series of C₅H₂, C₅H₄, C₅H₄^1+/2+ and related compounds. The stability of these molecules is assessed with the ring-opening barriers, HOMO-LUMO gap, singlet-triplet energy differences and nucleus independent chemical shift values.     

强流RFQ的稳定性设计研究

对强流RFQ耦合间隙的确定、二极模稳定杆的设计进行了详细的研究和讨论.利用现有的RFQ冷模,进行了本征模频率的测量、场分布的调试和测量、二极模稳定杆的试验.并通过与模拟结果的比较,验证了模拟程序在RFQ腔体设计中的可靠性.同时,对影响RFQ稳定性设计的物理进行了有益的探讨.