中药质量控制的研究策略和色谱技术

综述了色谱技术作为现代高效分离分析技术在中药药效物质基础研究和中药质量控制中的重要作用。提出中药药效物质组学研究策略,以实现中药药效物质基础与作用机理研究的一体化,进而从深层次揭示和全面控制中药的内在质量。论述结果表明,现代色谱及其联用技术是中药质量研究的重要技术平台之一。     

带形域内裂纹对SH波散射问题的边界元解

采用边界元法研究含裂纹的带形域各向同性弹性体，裂纹对SH波的散射问题，推导出带形域情况下不同边界条件的各种Green函数，导出了以裂纹张开位移为未知数的边界积分方程，计算出表面散射场和总位移．算例表明，利用所提供的格林函数和边界元格式解答带形域的散射问题比较方便．     

长中半径水平井钻柱接触摩擦阻力分析

用整体钻柱静力模型和间隙元法,分析了长中半径水平井钻柱的接触非线性问题,算出了钻柱与井壁接触摩擦阻力的分布,为水平井井眼轨道设计和施工提供了重要参数。     

紧黎曼面上一类线丛截面空间的基

对于亏格g≥1的紧Riemann曲面M,本文运用Riemann-Roch定理,证明了其上线丛Lλ(M)的某类截面空间非空集,并利用Theta函数和素形式构造出这类截面空间的一组基．     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

The influence of the width of a lattice-matched Al_0.82In_0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al_0.82In_0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.     

三维不规则区域热传导问题无网格方法的数值模拟

配点型无网格法是纯无网格法,它不需要任何背景网格,效率高。本文用加权最小二乘配点方法(Weighted Least-Squares Collocation Method-WLSCM)计算不规则区域热传导问题,形函数采用径向基函数近似。通过二维具有分析解的实例表明WLSCM方法精度高,稳定性好且具有较高的计算效率。此外,将WLSCM方法应用于工程中常见的三维不规则区域热传导问题,结果表明:WLSCM方法的计算结果与FLUENT的计算结果符合很好。     

两端叠层结构的中长波量子阱红外探测器

采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原 关键词： 电压调制 同时响应 量子阱红外探测器 双波段