电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

同轴线-矩形波导结散射特性的数值分析

 提出了一种数值分析同轴线-矩形波导结散射特性的模式匹配方法。采用同轴线和矩形波导的本征模函数表示电磁场分量,通过同轴线-矩形波导结截面横向场分量匹配获得波导结的散射参数,引入电场模式匹配矩阵的解析形式提高了计算效率。给出了基于模式匹配法数值仿真的各种同轴线-矩形波导结散射特性及仿真结果分析,并与3维全电磁波分析软件HFSS的仿真结果进行了比较,二者非常吻合。模式匹配法计算效率高,能广泛应用于微波毫米波元器件及系统结构的设计与优化。     

Optical simulation of in-plane-switching blue phase liquid crystal display using the finite-difference time-domain method

The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the finite-difference timedomain method,which is used to directly solve Maxwell's equations,can consider the lateral variation of the refractive index and obtain an accurate convergence effect.The simulation results show that e-rays and o-rays bend in different directions when the in-plane switching blue phase liquid crystal display is driven by the operating voltage.The finitedifference time-domain method should be used when the distribution of the liquid crystal in the liquid crystal display has a large lateral change.     

Laser cutting silicon-glass double layer wafer with laser induced thermal-crack propagation

This study was aimed at introducing the laser induced thermal-crack propagation (LITP) technology to solve the silicon-glass double layer wafer dicing problems in the packaging procedure of silicon-glass device packaged by WLCSP technology, investigating the feasibility of this idea, and studying the crack propagation process of LITP cutting double layer wafer. In this paper, the physical process of the 1064 nm laser beam interact with the double layer wafer during the cutting process was studied theoretically. A mathematical model consists the volumetric heating source and the surface heating source has been established. The temperature and stress distribution was simulated by using finite element method (FEM) analysis software ABAQUS. The extended finite element method (XFEM) was added to the simulation as the supplementary features to simulate the crack propagation process and the crack propagation profile. The silicon-glass double layer wafer cutting verification experiment under typical parameters was conducted by using the 1064 nm semiconductor laser. The crack propagation profile on the fracture surface was examined by optical microscope and explained from the stress distribution and XFEM status. It was concluded that the quality of the finished fracture surface has been greatly improved, and the experiment results were well supported by the numerical simulation results.     

The use of the high pressure hydrothermal method for tailored synthesis of zeolites without structure directing agents. Instance: Synthesis of natural zeolites with 5-1 building units

Abstract

The synthetic counterparts of natural alumosilicate zeolites containing 5-1 structural building units have been synthesized by simulating the natural hydrothermal formation conditions. Synthetic glasses of the respective zeolite composition were used as starting materials, while distilled water under hydrothermal conditions was used as pressure and reaction medium. No structure directing agents, additional solutions or sol-gel material has been employed.

The experience of former investigations on the tailored synthesis of alumosilicate zeolites showed, that 220°C is the expected temperature of maximum gain. Synthesis time was always 60 d. Synthesis pressure for mazzite (MAZ), mordenite (MOR), fer-rierite (FER), epistilbite (EPI) and dachiardite PAC) was 1 kbar while bikitaite (BIK) could only be synthesized at 2 kbar pressure.

The results of the investigations on hand show, that this process can be applied for the tailored synthesis of zeolites with completely new properties (e.g., semiconducting frameworks).     

Low temperature high-pressure crystallization and fluid phase equilibria in the systems Ar + CHF3 and N2 + CHF3

Abstract

An optical autoclave for phase studies on mixtures in the temperature range from 80 to 373 K and for pressures up to 200 MPa is described. The cell is fitted with sapphire windows and employs magnetic stirring. Measurements are performed according to the synthetical (e.g. by visual observation) or analytical method (e.g. by sampling and online gaschromatography). Results for the crystallization and fluid phase equilibria of the binary systems nitrogen + trifluoromethane and argon + trifluoromethane from 110 K to 230 K and up to 200 MPa are presented and discussed in comparison with other N₂- and CHF₃-systems.     

Simultaneous differential thermal and volume analysis at high pressure

Abstract

A method for simultaneous measurement of heat and volume changes associated with phase transformations is presented. Examples for melting, polymorphism and structural relaxation illustrate the method.     

动态法测杨氏模量实验的探索与改进

本文的主要工作有:分析了国内外杨氏模量测量的原理与方法;把测量装置由悬挂法改为支撑法,增加了实验棒的长度(原实验棒长度16 cm,新实验棒长度23 cm),扩大了数据的测量范围;移动支架置于导轨上,可直接在导轨标尺上准确读数,每隔3 mm测一次数据,数据增多;组装调试实验装置,测量了黄铜、纯铜、钛三种材料的杨氏模量并进行数据处理,将改进后实验系统测得的结果和原实验系统测得的结果以公认值进行比较,完善了改进后实验系统的教学功能。     

“拐点法”测普朗克常量误差大的应对方法

由光电效应试验中得到的伏安特性曲线,用粗略简易的"拐点法"可以很快计算出普朗克常量,但计算出的数值误差比较大,针对误差较大,通过多次的取值分析计算,最后得出可以尽可能减小误差的"拐点"的确定。     

Untersuchungen zur Ermittlung der Tiefenverteilung der primären Ionisationen in dicken Zwei-Element-Targets bei Beschuß mit Elektronen aus dem Energiebereich unterhalb 30 keV. Teil 1

Es werden methodische Untersuchungen zur Entwicklung eines Monte-Carlo-Programmes zur Berechnung der Tiefen-verteilung der primären Ionisationen auf der Grundlage der Vielfachstreutheorie von Molière beschrieben. Anhand aus-gewählter Zwei-Element-Targets wird die Leistungsfähigkeit von drei Varianten eines entsprechenden Elektronentrans-portmodells untersucht. Unter Benutzung der entwickelten Elektronentransportmodelle werden für die Elektronenstrahl-mikroanalyse interessierende Größen, wie Rückstreukoeffizient, Rückstreufaktor und Absorptionskorrektion, berechnet.