Dynamic control of photonic bandgap mediated by vacuum-induced coherence

We theoretically examine the storage and retrieval of a light pulse in a medium comprised of four-level atoms of the V − Λ-type. The two intermediate levels are probed by a weak field and vacuum-induced coherence effects lead the system to transparency. The temporal variation of the intermediate levels' splitting is used as an external parameter which allows the transfer of the impinging field to a combination of spin coherences. An auxiliary and far-detuned control field in a standing-wave configuration is used to induce a variable photonic bandgap by cross-phase modulation. It is shown that dynamic control of such a bandgap can be used to coherently manipulate the previously stored probe pulse. We use a general scheme to take into account multiwave mixing effects and solve the combined Maxwell-Bloch equations for the relevant coherences. It is shown that the system acts as an all-optical router.     

运动目标声信号的时频特征研究

提高声被动目标定位精度需要研究运动目标在有风条件下目标声信号的特征。本文从声学波动方程出发，对无风和有常速风情况下的波动方程进行了求解，得到了运动目标声信号的延迟关系；分析了解的主要影响项，并得到了其解析信号；用解析信号对运动目标声信号的延迟特性和时频特征进行了仿真计算。     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

气侵期间环空气液两相流动研究

本文建立了描述钻井气侵期间井眼气液两相流偏微分方程组,该方程组既考虑了不同渗透率的储层与储层钻开不同厚度下的气体侵入井眼情况,也给出了这种情况下该偏微分方程组的求解方法。利用实验数据进行了模拟,揭示了环空气液两相流型与流动参数变化特征,据此,能够为安全有效地井控提供理论基础。     

量子势阱粒子群优化算法的改进研究

为提高量子势阱粒子群优化算法的优化能力, 通过分析目前量子势阱粒子群优化算法的设计过程, 提出了改进的量子势阱粒子群优化算法. 首先, 分别基于Delta势阱、谐振子和方势阱 提出了改进的量子势阱粒子群优化算法, 并提出了基于统计量均值的控制参数设计方法. 然后, 在势阱中心的设计方面, 为强调全局最优粒子的指导作用, 提出了基于自身最优粒子加权平均和动态随机变量的两种设计策略. 实验结果表明, 三种势阱粒子群优化算法性能比较接近, 都优于原算法, 且Delta势阱模型略优于其他两种.     

Density of impurity states of shallow donors in a quantum well under intense laser field

The density of donor impurity states in a square GaAs–AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.     

量子阱垒层掺杂变化对双波长LED调控作用研究

采用APSYS软件研究了InGaN/GaN量子阱垒层掺杂变化对双波长 发光二极管发光光谱的调控问题. 在不同掺杂类型和浓度下对器件电子空穴浓度分布、 载流子复合速率、 能带结构、 发光光谱进行分析, 结果表明, 调节量子阱垒层n型和p型的掺杂浓度可以精确而有效地根据需要调控发光光谱, 解决发光光谱调控难的问题. 这些现象归因于掺杂的量子阱垒层对电子空穴分布的调控作用.     

Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.