Theory of Almost Algebraic Poincaré Complexes and Local Combinatorial Hirzebruch Formula

We develop a theory of almost algebraic Poincaré complexes to write an analog of the Hirzebruch formula with nonflat coefficients for combinatorial manifolds.     

Reduced percolation thresholds of immiscible conductive blends

The DC conductivity of polymer blends composed of poly(ethylene‐co‐vinyl acetate) (EVA) and high density polyethylene (HDPE), where a conductive carbon black (CB) had been preferentially blended into the HDPE, were investigated to establish the percolation characteristics. The blends exhibited reduced percolation thresholds and enhanced conductivities above that of the individually carbon filled HDPE and EVA. The percolation threshold of the EVA/HDPE/CB composites was between 3.6 and 4.2 wt % carbon black, where the volume resistivity changed by 8 orders of magnitude. This threshold is at a significantly lower carbon content than the individually filled HDPE or EVA. At a carbon black loading of 4.8 wt %, the EVA/HDPE/CB composite exhibits a volume resistivity which is approximately 14 and 11 orders of magnitude lower than the HDPE/CB and EVA/CB systems, respectively, at the same level of incorporated carbon black. The dielectric response of the ternary composites, at a temperature of 23°C and frequency of 1 kHz, exhibited an abrupt increase of ca. 252% at a carbon concentration of 4.8 wt %, suggesting that the percolation threshold is somewhat higher than the range predicted from DC conductivity measurements. Percolating composites with increasing levels of carbon black exhibit significantly greater relative permittivity and dielectric loss factors, with the composite containing 6 wt % of carbon black having a value of ϵ′ ≈ 79 and ϵ″ ≈ 14. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 1899–1910, 1999     

溶液连续过滤快速生长KDP晶体及其品质分析

设计溶液实时连续过滤装置用于降温法快速生长KDP晶体.采用高亮度激光照射分析对比晶体内部的散射点密度,以同步辐射为光源的X射线形貌成像技术探测晶体内部的生长缺陷,并测定晶体三倍频激光(355 nm)的损伤阈值.实验结果显示,溶液连续过滤法生长的KDP晶体中包裹体和位错的密度明显降低,晶体的激光损伤阈值提高了30%.     

Structural,optical, thermal and mechanical characterization of an organic nonlinear optical material: 4-methyl-3-nitrobenzoic acid single crystal

Organic single crystals of 4-methyl-3-nitrobenzoic acid (4M3N) have been grown by slow evaporation solution growth technique at room temperature. The single crystal X-ray diffraction study reveals that 4M3N crystallizes in monoclinic system with space group P21/n. The crystalline perfection of the crystal was analyzed by high resolution X-ray diffraction (HRXRD) measurements. The functional groups present in 4M3N have been identified from FT-IR and FT-Raman spectra. The lower cut-off wavelength of 4M3N is found to be 404 nm and the optical band gap is calculated as 2.91 eV. The refractive index shows normal behavior with wavelength. The physio chemical changes, decomposition and stability of the 4M3N compound were established by TG-DTA studies. Vickers microhardness measurement concludes that 4M3N belongs to soft material (n=2.5) category. The LDT value is found to be higher than that of KDP and some of the important organic NLO materials. The third order nonlinear refractive index and nonlinear absorption coefficient of the 4M3N have been measured by Z-scan studies. The imaginary and real parts of the third-order susceptibility values were determined as Im χ³=9.129×10⁻¹¹ esu and Re χ³=1.4034×10⁻⁹ esu respectively. The dislocation density was calculated to be 3.0448×10⁶ cm⁻² which indicates the quality of the crystal.     

微波大气击穿阈值的理论研究

本文通过对使用有效场强(或均方根场强)得到的微波大气击穿阈值表达式进行讨论, 指出其推导中所做的假设及这些假设应用到微波大气击穿过程中存在的问题. 然后分别使用解析理论和数值模拟对微波大气击穿过程中的有效电子温度变化过程和击穿阈值进行研究, 并将其与直流电场进行比较. 分析发现在高气压下, 电子能量转移频率高, 有效电子温度随电场大幅振荡, 由于电离频率随有效电子温度的增长率大于电子能量损失随有效电子温度的增长率, 因此在高气压时, 微波大气击穿阈值低于使用有效场强的击穿阈值. 通过大量分析, 给出了理论推导和数值模拟得到的微波大气击穿阈值拟合表达式.     

高功率微波脉冲大气传输的一些规律

 推导了高功率微波（HPM）脉冲大气击穿阈值功率公式，估计了脉冲从地面向上传输的潜行时间。数值模拟了HPM大气传输的物理图象和潜行时间的变化。     

基于混合大气传输模型的单脉冲高功率微波大气击穿理论与实验研究

综合考虑高功率微波强电场作用下的热致快速电子效应、碰撞频率、电离频率等充分体现高功率微波特性的参量模型,基于高功率微波混合大气传输模型,提出了单脉冲高功率微波混合大气统一非线性击穿模型,定义了单脉冲高功率微波击穿阈值.理论研究结果表明:考虑中性气体分子极化作用以及电子的碰撞热效应后,大气击穿时对应的等离子体频率明显变大;大气击穿阈值随高度的增加先逐渐减小然后增大,在30-60 km区域存在一个极小值.开展了X波段窄带高功率微波单脉冲大气击穿实验研究,得到了典型条件下的高功率微波击穿现象、波形和阈值,且与理论结果一致性较好.     

超短沟道MOSFET电势的二维半解析模型

本文根据超短沟道MOSFET的工作原理, 在绝缘栅和空间电荷区引入两个矩形源, 提出了亚阈值下电势二维分布的定解问题. 通过半解析法和谱方法相结合, 首次得到了该定解问题的二维半解析解, 解的结果是一个特殊函数, 为无穷级数表达式. 该模型的优点是避免了数值分析时的方程离散化, 表达式不含适配参数、运算量小、精度与数值解的精度相同, 可直接用于电路模拟程序. 文中计算了沟道长度是45—22 nm的MOSFET电势、表面势和阈值电压. 结果表明, 新模型与Medici数值分析结果相同. 关键词： 半解析法 电势 阈值电压 MOSFET     

Epidemic spreading on networks with vaccination

In this paper, a new susceptible-infected-susceptible (SIS) model on complex networks with imperfect vaccination is proposed. Two types of epidemic spreading patterns (the recovered individuals have or have not immunity) on scale-free networks are discussed. Both theoretical and numerical analyses are presented. The epidemic thresholds related to the vaccination rate, the vaccination-invalid rate and the vaccination success rate on scale-free networks are demonstrated, showing different results from the reported observations. This reveals that whether or not the epidemic can spread over a network under vaccination control is determined not only by the network structure but also by the medicine's effective duration. Moreover, for a given infective rate, the proportion of individuals to vaccinate can be calculated theoretically for the case that the recovered nodes have immunity. Finally, simulated results are presented to show how to control the disease prevalence.     

Sc2O3替代层在532 nm高反膜中的应用

 将Sc₂O₃替代层引入到532 nm高反膜(HfO2/SiO2)n中,利用Sc₂O₃在盐酸中具有较好的溶解性这个特点,把膜层与基片脱离,以方便基片返修,缩短返修周期,降低成本。能量色散谱元素测试表明,脱离后Sc元素残留率为0。用Lamada900分光光度计、WykoNT1100轮廓仪和ZYGO干涉仪分别表征了替代层引入对高反膜的光谱、表面粗糙度和应力的影响,并测试了膜系在532 nm的激光损伤阈值的变化,结果表明Sc₂O₃替代层的引入对高反膜的性能几乎没有负面影响。