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91.
圆柱型正交各向异性圆形薄板的非线性非对称弯曲问题(Ⅱ) 总被引:3,自引:3,他引:0
本文利用“正则摄动法”[2]研究文献[1]中由“两变量法”[3]所得到的关于Wnm,和的递推方程和递推边界条件的求解问题。求得了本问题的一致有效渐近解,最后作为实例,我们利用“混合摄动法”[4]研究了轴对称线性弯曲问题,并将所得结果与文献[5]中给出的精确解相比较,两者基本上是一致的。 相似文献
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维生素B类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱 总被引:3,自引:0,他引:3
维生素B类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱汪瑗,于秉正张煦(首都师范大学分析测试中心北京100037)(北京大学分析测试中心北京)关键词维生素B_1,维生素B_2,薄层色谱,表面增强拉曼散射,近红外付立叶变换拉曼光谱将薄层色谱(TLC)... 相似文献
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Ronny Kleinhempel Gunar Kaune Matthias Herrmann Hartmut Kupfer Walter Hoyer Frank Richter 《Mikrochimica acta》2006,156(1-2):61-67
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy
target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural,
electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition
rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency
in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition
mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222)
oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown
in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress
in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa. 相似文献
98.
Titanium dioxide (TiO2) thin films have been prepared on indium doped tin oxide (ITO) glass by sol-gel dip-coating method. Properties of the films
were determined as a function of heat-treatment by X-ray diffraction, scanning electron microscopy and photoelectrochemical
tests. The films heat-treated at higher temperatures show better crystallinity and photoresponse. The microscopic structure
on the film after heat-treatment is attributed to the incorporation of organic polymer into the precursor solution. The performance
of the electrodes treated at different temperature on photoelectrocatalytic degradation of methyl orange was investigated.
The effect of applied potential and the ability of the electrode to be repeatedly used in photoelectrocatalytic degradation
were also evaluated. 相似文献
99.
Sawada Y. Seki S. Sano M. Miyabayashi N. Ninomiya K. Iwasawa A. Tsugoshi T. Ozao R. Nishimoto Y. 《Journal of Thermal Analysis and Calorimetry》2004,77(3):751-757
Tin-doped indium oxide In2O3 (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal
analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS)
in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased
on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365
to 600°C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures
for 250 nm thick films were approx. 100-120 and 205-215°C. The 25 nm thick films evolved water vapor at much higher temperatures;
a shoulder at approx. 150-165°C and a peak at approx. 242°C were observed. The evolution temperatures increased by increasing
the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of
water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)3, formed on the surface of the nm-sized ITO particles.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
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