ICP-AES测定钛基复合材料中镍、钕和铁的研究

采用ICP－AES法对钛基复合材料中的合金元素镍、钕、铁的测定进行了研究，着重进行了基体元素及待测元素镍、钕、铁之间干扰试验及各元素在测定浓度范围内的线性相关性试验，进行了酸度试验，测定了钛基复合材料中3种元素的含量，得到了较好的精密度和准确度。方法简便、可靠，获得满意的分析结果。     

Stancu-Sikkema算子的点态估计

本文构造了Stancu—Sikkema算子,并利用点态光滑模研究了此算子的点态逼近正逆定理.     

ICP-AES同时测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴

采用ICP－AES法测定混合矿物素中的磷、钙、铁、铜、锌、锰、镁、钴元素含量，并对样品的溶解酸和酸用量、元素分析线的选择以及共存元素间的干扰进行了研究。该法简便、快速，精密度和准确度较好。     

几种常见光源特性的研究

本通过大学物理实验中常用光源特性的分析，说明了实验中光源使用的合理性。     

烷烃类分子对NC0（A^2∑^＋）自由基的猝灭

采用激光光解—激光诱导荧光(LP—LIF)的方法，用266nm激光光解CHBr3分子产生CH自由基，再与N2O继续反应作为NCO自由基的产生源，用438．6nm激光将电子基态X^2∏i(00^10)的NCO激励到激发态A^2∑^+(00^00)上，通过检测激发态NCO时间分辨荧光信号，测得室温(298K)下NCO(A^2∑^+)被烷烃类分子猝灭的实验结果，获得了A^2∑^+(00^00)态猝灭速率常数．实验发现，随着烷烃分子中C—H键数增加，其猝灭截面也近线性增加，但随着分子体积增大，这种增加趋缓．     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Critical Behaviour of the One—Dimensional Ferromagnetic t—J Model

The one-dimensional super-symmetric ferromagnetic t-J model is studied via the thermal Bethe ansatz.Analytic expressions of the free energy for T→O are obtained.A new critical behaviour beyond the universal class of Luttinger Liquids is found in this system.