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71.
In this paper, we establish the discrete approximation of continuous-state nonlinear branching processes in Lévy random environments by using tightness and convergence sequence in infinite dimensional product space via stochastic differential equations. Taking α-stable branching as an example, the conditions which are given to discretize continuous-state nonlinear branching processes in Lévy random environments are verified. © 2022 Chinese Academy of Sciences. All rights reserved.  相似文献   
72.
针对三维非稳态对流扩散反应方程,构造了一种高精度紧致有限差分格式,对空间的离散采用四阶紧致差分方法,对时间的离散采用Taylor级数展开和余项修正技术,所提格式在时间上的精度为二阶、在空间上的精度为四阶。利用Fourier稳定性分析法证明了该格式是无条件稳定的。最后给出数值算例验证了理论结果。  相似文献   
73.
In this paper, we give a brief survey of recent results on axially symmetric Navier-Stokes equations (ASNS) in the following categories: regularity criterion, Liouville property for ancient solutions, decay and vanishing of stationary solutions. Some discussions also touch on the full 3 dimensional equations. Two results, closing of the scaling gap for ASNS and vanishing of homogeneous D solutions in 3 dimensional slabs will be described in more detail.In the addendum, two new results in the 3rd category will also be presented, which are generalizations of recently published results by the author and coauthors.  相似文献   
74.
The spreading of a globally distributed damage, created in the stationary regime, is studied in a single-component irreversible reaction process, i.e., the BK model [Browne and Kleban,Phys. Rev. A 40, 1615 (1989)]. The BK model describes one variant of the A+AA2 reaction process on a lattice in contact with a reservoir of A species. The BK model has a single parameter, namely the rate of arrival of A species to the lattice (Y). The model, exhibits an irreversible phase transition between a stationary reactive state with production of A2 species and a poisoned state with the lattice fully covered by A species. The transition takes place at critical points (Y C ) which solely depend on the Euclidean dimensiond. It is found that the system is immune ford=1 andd=2, in the sense that even 100% of initial damage is healed within a finite healing period (T H ). Within the reactive regime,T H diverges when approachingY C according toT H (Y C Y), with 1.62 and 1.08 ford=1 andd=2, respectively. Ford=3 a frozen-chaotic transition is found close toY s 0.4125, i.e., well inside the reactive regime 0YY C 0.4985. Just atY S the damageD(t) heals according toD(t) t , with 0.71. For the frozen-chaotic transition atd=3 the order parameter critical exponent 0.997 is determined.  相似文献   
75.
SupposeX andY are independent and identically distributed, and independent ofU which satisfies 0U1. Recent work has centered on finding the lawsL(X) for whichX U(X+Y) where denotes equality in law. We show that this equation corresponds to a certain projective invariance property under random rotations. Implicitly or explicitly, it has been assumed that the characteristic function ofX has an expansion property near the origin. We show that solutions may be admitted in the absence of this condition when –logU has a lattice law. A continuous version of the basic problem replaces sums with a Lévy process. Instead we consider self-similar processes, showing that a solution exists only whenU is constant, and then all processes of a given order are admitted.This research was in part supported by NSERC grant A-8466.  相似文献   
76.
We derive a duality formula for two-row Macdonald functions by studying their relation with basic hypergeometric functions. We introduce two parameter vertex operators to construct a family of symmetric functions generalizing Hall-Littlewood functions. Their relation with Macdonald functions is governed by a very well-poised q-hypergeometric functions of type 43, for which we obtain linear transformation formulas in terms of the Jacobi theta function and the q-Gamma function. The transformation formulas are then used to give the duality formula and a new formula for two-row Macdonald functions in terms of the vertex operators. The Jack polynomials are also treated accordingly.  相似文献   
77.
Given a stationary stochastic continuous demand of service σ(θtω) dt with ∫ σ(ω)P(dω) < 1, we construct real stationary point processes (Tn, n ∈ Z)[Tn < Tn+1, lim±∞ Tn = ±∞] such that
Tn+1-Tn=D + ∫TnTn-1σΘtDt (n ∈ Z)
for a given constant D \2>0. These point processes correspond to a service discipline for which a single server services during the time intervals [Tn, Tn+1[ the demand of service accumulated during the proceding intervals [Tn?1, Tn[ and take a rest of fixed duration D.  相似文献   
78.
In this paper, the Nerlove-Arrow model of optimal dynamic advertising policies is generalized by assuming a general probability distribution of the forgetting time, rather than the exponential one. A control problem with integrodifferential equations of motion is defined for which the transitory and steady-state properties of the optimal advertising policy are examined. The effects of assumptions like IHR-distributions and DHR-distributions, the existence of an upper bound for the forgetting time, etc., are explained. It is shown that there are two (in the case of an exponential distribution even three) different current-value adjoint functions associated with the problem, and relations between the two (three) are established. Also provided is a sensitivity analysis.Thanks are due to G. Feichtinger and S. Jorgensen for useful discussions.  相似文献   
79.
Plasma-chemical reduction of SiCl4 in mixtures with H2 and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H2 ratio strongly affects the plasma composition as well as the deposition (r D) and etch (r E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiClx species, which are the precursors of the film growth. Chemisorption of SiClx and the reactive surface reaction SiClx+H–SiCl(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr D [SiClx][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H2 ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.  相似文献   
80.
We consider an anharmonic crystal described by variablesS x ,x d ,S x , with one-body interaction ¦S x ¦ and nearest neighbor (n.n.) two body interaction ¦S x –S y ¦. We prove that, for d bounded, , where is the correlation function for the free boundary condition Gibbs state in ,>0 and are suitable constants independent of and . This generalizes previous results obtained in the case.Research partially supported by Consiglio Nazionale delle Ricerche.  相似文献   
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