Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

Experimental study of light diffraction by standing ultrasonic wave with cylindrical symmetry

We report a new acousto-optic arrangement based on ultrasonic wave with cylindrical symmetry. The theory of light interaction with standing cylindrical ultrasonic wave is experimentally verified in the Fraunhofer region. A very good agreement of experimental results with numerical calculations based on the proposed theory is found. The diffraction pattern consists of ring-shaped diffraction orders which posses a fine structure. The time average light intensity of the whole zeroth diffraction order as a function of the Raman-Nath parameter is investigated. The modulation properties of presented system are examined by means of single photon counting technique. Finally, some potentially useful applications in the laser and fibre technology are suggested.     

极大单调算子的一个邻近点算法

设E是自反的Banach空间,T∶E→2E是极大单调算子.T-10≠.令x0∈E,yn=(J λnT)-1xn en,xn 1=J-1(αnJxn (1-αn)Jyn),n≥0,λn>0,αn∈[0,1],本文研究了{xn}收敛性.     

Nonlinear Time Series Analysis Since 1990:Some Personal Reflections

Abstract I reflect upon the development of nonlinear time series analysis since 1990 by focusing on five majorareas of development. These areas include the interface between nonlinear time series analysis and chaos,thenonparametric/semiparametric approach,nonlinear state space modelling,financial time series and nonlinearmodelling of panels of time series.     

Absorption Complex between Porphyrin and Phenothiazine in Reverse Micelles

Porphyrin derivatives attract much more interest in photodynamic therapy (PDT). Their importance as therapeutic drugs and targeting agents has been widely recognized1, and many of the efforts have been put towards crafting new porphyrin-based molecular entities to achieve enhanced tumor localization, better tissue penetration and increased singlet oxygen quantum yield2. The states of porphyrins in tissue models such as micelles, lipid bilayers are extensively investigated focusing more or l…     

Adhesive-free bonding of Zerodur glass to silicon

This work demonstrates anodic bonding of Zerodur glass having very low co-efficient of thermal expansion (CTE) to Si, Zerodur glass to thermally grown silicon dioxide on silicon and Pyrex glass to Ge. Bonding results, using point cathode contact and plate cathode contact configurations, are discussed. Bonding parameters, i.e. applied dc voltage, temperature and bonding time were determined. Heating and cooling rates for crack-free bonding of Zerodur glass were also determined.     

Composition spread metal thin film fabrication technique based on ion beam sputter deposition

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials.     

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.     

Preparation of activated carbons from cherry stones by activation with potassium hydroxide

Using cherry stones, the preparation of activated carbon has been undertaken in the present study by chemical activation with potassium hydroxide. A series of KOH-activated products was prepared by varying the carbonisation temperature in the 400-900 °C range. Such products were characterised texturally by gas adsorption (N₂, −196 °C), mercury porosimetry, and helium and mercury density measurements. FT-IR spectroscopy was also applied. The carbons prepared as a rule are microporous and macroporous solids. The degree of development of surface area and porosity increases with increasing carbonisation temperature. For the carbon heated at 900 °C the specific surface area (BET) is 1624 m² g⁻¹, the micropore volume is 0.67 cm³ g⁻¹, the mesopore volume is 0.28 cm³ g⁻¹, and the macropore volume is 1.84 cm³ g⁻¹.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.