米散射理论在新型导光板中的应用

根据米散射理论,提出了新型导光板的设计思路,计算并分析了对于一定波长的入射光,不同粒径的微粒的散射特性。总结了随着微粒粒径的变化,散射效率、消光效率与背向散射效率的变化规律,分析了散射过程中的偏振度随粒子粒径几散射角变化的情况,同时模拟计算了多个微粒对同一波长的入射光经过多次散射后的概率统计结果。     

薄油层SAGD开发蒸汽腔发育和生产指标预测

通过分析现场生产数据和数值模拟结果,将薄层稠油油藏蒸汽辅助重力驱油(SAGD)生产中蒸汽腔发育分为横向扩展和向下运移两个过程,并进行简化处理预测SAGD生产指标.联合质量守恒方程、能量守恒方程和周围地层散热模型得到一个描述蒸汽腔发育的综合表达式,该方程属于典型的第二类Volterra积分函数.通过拉普拉斯变换对Volterra积分函数进行半解析求解,最终得到不同时刻蒸汽腔发育状态.为验证模型的正确性,将模型的计算结果与CMG Stars的计算结果对比,整体误差小于5%.新模型可以方便简单地预测SAGD生产中蒸汽腔发育过程和生产动态指标,从而确定SAGD生产的极限油藏参数和合理的注采参数.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

Using transient and steady-state SEA to assess potential errors in the measurement of structure-borne sound power input from machinery on coupled reception plates

Isolated reception plates provide an engineering approach to quantify the structure-borne sound power input from machinery through the measurement of the spatial-average velocity level and structural reverberation times. For applications in building acoustics there are practical and economic reasons to consider using coupled reception plates formed by solid heavyweight walls or floors that are structurally coupled to other building elements. This paper uses transient and steady-state statistical energy analysis to investigate how the errors depend upon the building structure to which the coupled reception plate is connected. It is shown that the problem is twofold. Firstly, in the low- and mid-frequency ranges, the steady-state velocity level on the coupled reception plate is increased by energy returning from other coupled plates. Secondly, the structural decays on the coupled reception plate have significant curvature due to returning energy; hence short evaluation ranges are needed to minimise the error when determining the total loss factor. This leads to a problematic situation where the coupled reception plate appears to give the correct answer due to the error in the energy cancelling out the error in the total loss factor. The latter error can be minimised using short evaluation ranges for the structural reverberation time.     

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.     

Solvent-free synthesis of oxides for CuInSe2 thin films fabrication

A low-cost non-vacuum process for fabrication of CuInSe₂ (CIS) films by solvent-free mechanochemical method and spin-coating process is described. First, highly monodisperse Cu, In oxides nanoparticles are synthesized via a facile, solvent-free route, which is the first applied in the CIS solar cells. Second, the oxide particulate precursors are deposited in a thin layer by spin-coating technique. Finally, the dry layers are sintered into CIS thin films with composition control by sequential reduction and selenization. Through X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), it is found that near stoichiometric CIS films with a micron-sized dense grains are obtained in our work. Three types of mixed nitrates are used to fabricate oxides, the influence of the degree of mixing on the CIS films have been investigated.     

In-situ strain effect on extrinsic transport of polycrystalline La0.7(Ca,Sr)0.3MnO3 films

The spin-polarised transport in ferromagnetic polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ films on piezoelectric substrate has been investigated. The systematic study involved in finding the effect of in-situ strain on extrinsic electrical transport of various thick polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ thin films. The in-situ strain in the manganite polycrystalline thin film is achieved by applying an electric field to the piezoelectric substrate 0.72 Pb(Mg_1/3Nb_2/3)O₃-0.28 PbTiO₃ (PMN-PT). A reversible strain of about 0.11% is acquired with an application of 10 kV/cm to the piezoelectric substrate. A typical drop in resistance at low magnetic fields has been found in all the polycrystalline manganite films. The effect of reversible strain versus the resultant strain gauges was discussed in all the polycrystalline films. At low temperatures, the effect of strain on low-field magnetoresistance and high-field magnetoresistance was found to be negligible. Further, the results are compared with the transport in manganite films deposited on step edge junctions.     

单色仪转角重复精度的相位板衍射准直方法测量

为准确测量上海光源软X射线谱学显微光束线采用的变包含角平面光栅单色仪的转角重复精度,提出了一种新的基于相位板衍射准直技术的测量方法.该方法将半导体激光单模光纤和相位板衍射准直技术结合起来,利用面阵CCD采集图像,通过测量光斑的位移变化确定平面镜和光栅的角度变化.实验表明.该方法可以测量掠入射情况下单色仪联动时的转角重复精度,测量精度可达士0.1",此测量精度优于同等实验条件下的商用ELCOMAT 3000自准直仪的测量精度.     

ZnO-SnO_2透明导电薄膜的制备及性能研究

采用二步成胶工艺制备ZnO-SnO_2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10~(-3) Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO_2透明导电薄膜性能优异.