一种用于高功率微波合成的X波段双色板

在数值模拟的基础上,设计了一种用于高功率微波合成的X波段同频带双色板。微波斜45°入射时,该双色板在9 GHz到9.3 GHz内反射效率大于99%,在9.7 GHz到10 GHz内传输效率大于99%,可以用于实现两路高功率微波的同极化合成。利用电磁场全波分析软件,建立了双色板数值模型,分析了该双色板的场增强因子和功率容量问题。     

Experiments and analysis of thin tungsten slice and W/Cu brazing for primary collimator scraper in CSNS/RCS

According to the requirements for the beam collimation system of the rapid cycling synchrotron(RCS)of China Spallation Neutron Source(CSNS),the main structure of a scraper of primary collimator is made by W/Cu brazing,in which the thickness of tungsten slice is 0.17 mm.In order to get the best mechanical properties,the brazing temperature is suggested to be controlled under the recrystallization temperature of tungsten,while the recrystallization temperature is affected directly by the thickness of tungsten.Because of little research and application on the brazing of thin tungsten slice of 0.17 mm and copper,tensile tests are done to get the mechanical properties of tungsten slices which experience different brazing temperatures.In keeping the inner relationships between the mechanical properties and temperature,another experiment is done by using SEM to scan the microstructures including the size and distribution of crystals.Finally we determine the recrystallization temperature of tungsten slice of 0.17 mm,and get the best parameters of W/Cu brazing for scrapers of primary collimator in CSNS/RCS.     

环形线负载驱动变曲率反射镜技术

从薄板弹性理论出发,对可实现曲率变化的环形线负载驱动模型进行分析,给出了基于该模型的大镜厚比变曲率反射镜的形变方程.以较小的驱动力实现较大的中心形变为目标,利用MATLAB软件对不同反射镜厚度、驱动环半径下的反射镜形变情况进行模拟计算,结果表明,反射镜厚度范围在2~4 mm之间、驱动环半径数值在反射镜有效半径1/2处最佳.以此为依据,设计并研制了口径为100 mm、厚度为3 mm的铍青铜环形线负载驱动变曲率反射镜结构及原型样片,给出了变曲率反射镜整体结构前10阶的振动模态分析结果.完成装配后,反射镜原型样片的面形精度接近λ/30(λ为波长).对该结构进行极限曲率变化和面形精度保持的验证实验,通过对变曲率反射镜结构进行改进,环形线负载驱动能够实现超过30个波长(632.8 nm)的中心形变,且面形精度的变化与反射镜中心矢高的变化呈弱相关.     

Residual stress/strain analysis in thin films by X-ray diffraction

Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.

In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed.     

Nd:YAG laser synthesis of nanostructural V2O5 from vanadium oxide sols: Morphological and structural characterizations

Vanadium oxide thin films were prepared by sol-gel method, then subjected to Nd:YAG laser (CW, 1064 nm) radiation. The characteristics of the films were changed by varying the intensity of the laser radiation. The nanocrystalline films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). XRD revealed that above 102 W/cm² the original xerogel structure disappears and above 129 W/cm² the films become totally polycrystalline with an orthorhombic structure. From TEM observations, we can see that due to laser radiation, the originally fibrillar-like particles disappear and irregular shaped, layer structured V₂O₅ particles are created. From XPS spectra we can conclude that due to laser radiation the O/V ratio increased with higher intensities.     

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al₂O₃ film for the AR coating and a stack of λ/4 thick Al₂O₃/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation.     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

用于同步辐射光源的成像板粉末衍射系统

报道了我们研制的一套成像板粉末衍射装置,对其误差来源进行了详细的分析讨论,并与衍射仪进行了比较.该装置的半径为143.3mm,最大测量角度范围不160°，最大角度(2q )偏差小于0.03°,这些性能指标已被实验所证实,完全可应用于粉末衍射全谱的测量.     

薄膜法布里-珀罗滤光片中的超棱镜效应

基于薄膜法布里珀罗滤光片在其峰值波长处具有较大群延迟的特性,设计并从实验上验证了光束倾斜入射时这种结构中存在的超棱镜效应。根据光学薄膜理论中的特征矩阵法,数值模拟计算了器件的群延迟和空间色散曲线,镀制并对器件进行了测试。测试结果表明器件在透射峰值波长处因超棱镜效应引起的空间色散最大位移值达到65μm,与理论计算结果非常吻合;相对于传统的光栅和棱镜器件而言器件具有更高的空间角度色散,实际测试在784.5 nm至786.5 nm波长范围内器件的角色散达到30°/nm。     

Small-scale fracture toughness of ceramic thin films: the effects of specimen geometry,ion beam notching and high temperature on chromium nitride toughness evaluation

For the implementation of thin ceramic hard coatings into intensive application environments, the fracture toughness is a particularly important material design parameter. Characterisation of the fracture toughness of small-scale specimens has been a topic of great debate, due to size effects, plasticity, residual stress effects and the influence of ion penetration from the sample fabrication process. In this work, several different small-scale fracture toughness geometries (single-beam cantilever, double-beam cantilever and micro-pillar splitting) were compared, fabricated from a thin physical vapour-deposited ceramic film using a focused ion beam source, and then the effect of the gallium-milled notch on mode I toughness quantification investigated. It was found that notching using a focused gallium source influences small-scale toughness measurements and can lead to an overestimation of the fracture toughness values for chromium nitride (CrN) thin films. The effects of gallium ion irradiation were further studied by performing the first small-scale high-temperature toughness measurements within the scanning electron microscope, with the consequence that annealing at high temperatures allows for diffusion of the gallium to grain boundaries promoting embrittlement in small-scale CrN samples. This work highlights the sensitivity of some materials to gallium ion penetration effects, and the profound effect that it can have on fracture toughness evaluation.