图的邻点全和可区别全染色

设f:V(G)∪E(G)→{1,2,…,k}是图G的一个正常k-全染色。令■其中N(x)={y∈V(G)|xy∈E(G)}。对任意的边uv∈E(C),若有Φ(u)≠Φ(v)成立,则称f是图G的一个邻点全和可区别k-全染色。图G的邻点全和可区别全染色中最小的颜色数k叫做G的邻点全和可区别全色数,记为f tndi∑(G)。本文确定了路、圈、星、轮、完全二部图、完全图以及树的邻点全和可区别全色数,同时猜想:简单图G(≠K2)的邻点全和可区别全色数不超过△(G)+2。     

符号圈拼接图的零度

令$\eta(\Gamma)$和$c(\Gamma)$是符号图$\Gamma$的零度和基本圈数. 一个符号圈拼接图是指每个块都是圈的连通符号图. 本文证明了对任意符号拼接图$\eta(\Gamma)\le c(\Gamma)+1$成立, 并且刻画了等号成立的极图, 推广了王登银等人(2022)在简单圈拼接图上的结果. 此外, 我们证明了任意的符号拼接图$\eta(\Gamma)\neq c(\Gamma)$, 给出了满足$\eta(\Gamma)=c(\Gamma)-1$的符号拼接图的一些性质并刻画处$\eta(\Gamma)=c(\Gamma)-1$的二部符号拼接图.     

Semiconductor Emitters in Entropy Sources for Quantum Random Number Generation

Random number generation (RNG) is needed for a myriad of applications ranging from secure communication encryption to numerical simulations to sports and games. However, generating truly random numbers can be elusive. Pseudorandom bit generation using computer algorithms provides a high random bit generation rate. Nevertheless, the reliance on predefined algorithms makes it deterministic and predictable once initial conditions are known. Relying on physical phenomena (such as measuring electrical noise or even rolling dice) can achieve a less predictable sequence of bits. Furthermore, if the physical phenomena originate from quantum effects, they can be truly random and completely unpredictable due to quantum indeterminacy. Traditionally, physical RNG is significantly slower than pseudorandom techniques. To meet the demand for high-speed RNG with perfect unpredictability, semiconductor light sources are adopted as parts of the sources of randomness, i.e., entropy sources, in quantum RNG (QRNG) systems. The high speed of their noise, the high efficiency, and the small scale of these devices make them ideal for chip-scale QRNG. Here, the applications and recent advances of QRNG are reviewed using semiconductor emitters. Finally, the performance of these emitters is compared and discuss their potential in future technologies.     

DOA estimation for uniform circular array without the source number based on beamspace transform and higher-order cumulant

Fourth-order cumulant is one of most widely used high-order cumulant for direction of arrival (DOA) estimation due to its ability of expanding the virtual array aperture as well as suppressing Gaussian noise. To address the two-dimensional (2D) DOA estimation problem, we propose a modified MUSIC scheme for uniform circular array (UCA) in this paper. Firstly, the fourth-order cumulant of UCA is considered to construct a new propagator, resulting in the elimination of a priori knowledge of the number of signals. Secondly, the UCA is transformed by beamspace transformation, reducing the time computational complexity of the algorithm since the two-dimensional grid search and singular value decomposition are avoided. And finally a low-rank recovery algorithm is adopted to improve the accuracy regarding the limited snapshots scenario. The numerical simulations validate the superiority of the proposed method.     

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提出用复数法来分析平面机构的运动，其优点在于分析问题时概念清晰，运算简便，且机构运动越复杂，优越性越明显，也为使用计算机编制程序提供方便     

STATIC STUDY OF CANTILEVER BEAM STICTION UNDER ELECTROSTATIC FORCE INFLUENCE

I. INTRODUCTION For capacitor-like microelectromechanical systems (MEMS) structure[1??6], the voltage betweenthe structure and substrate causes attractive force. The sources of the voltage can be an arti?ciallymounted device[2 , 7??9] or the temporar…     

离子束增强沉积制备Cr—N薄膜及其摩擦学性能研究

利用离子束增强沉积（ＩＢＥＤ）技术制备了Ｃｒ－Ｎ薄膜，并对不同能量氮离子轰击所制备的薄膜组成进行了Ｘ射线衍射及光电子能谱分析，测定了涂层的断裂性值，并对涂层的摩擦学性能进行了研究。结果表明：在相同试验条件下，氮离子轰击能量影响Ｃｒ－Ｎ薄膜的相组成及取向，采用低能量氮离子轰击所得到的薄膜具有较高的断裂韧性和优异的耐磨性能。     

含界面裂纹的不可压缩双金属胶接件的解析变分－守恒积分解法

本文根据平面问题的复变函数理论推导了含界面裂纹双金属胶接件满足微分方程、开裂界面边界条件与未开裂界面连续条件的应力与位移本征函数展开式，并建立了不可压缩双金属界面裂纹的复合型守恒积分及其与应力强度因子之关系，进而利用分区广义变分原理满足其余边界条件确定包含应力强度因子在内的展开式系数，得到守恒积分并求出应力强度因子．数值计算表明，沿不同回路的在恒积分具有很好的守恒性而且由这两种方法所得应力强度因子具有很好的一致性．     

聚乙烯醇及磷酸酯气相润滑下氮化硅的磨损特性研究

采用球－三盘磨损试验机在３７０℃，聚乙烯醇及磷酸三甲苯基酯气相润滑下研究了Ｓｉ３Ｎ４与Ｍ５０工具钢对磨时的磨损特性．结果表明：在气相润滑下聚乙烯醇可以有效地降低Ｓｉ３Ｎ４的磨损；在聚乙烯醇中添加少量的三甲苯基磷酸酯可以进一步降低Ｓｉ３Ｎ４的磨损．Ｘ射线光电子能谱分析发现，Ｓｉ３Ｎ４的摩擦表面形成了主要由元素碳、氧和磷组成的固体润滑膜，Ｓｉ３Ｎ４发生了氧化并生成了ＳｉＯ２和—ＳｉＮＯ等化合物，而三甲苯基磷酸酯则在摩擦过程中发生了降解．