129Xeq+轰击N型和P型Si表面时的电子发射产额研究

在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中,通过改变入射离子的电荷态,研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时,N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%;对于具有相同入射动能的Xeq+离子,两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外,还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额,得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.     

紫外波长下混合表面等离子体纳米激光器

设计了一种带有金属脊和氟化镁夹层的紫外混合表面等离子体纳米激光器。在COMSOL Multiphysics软件的基础上,使用有限元法分析了所设计激光器结构的电场分布、模式特性、品质因数和增益阈值。结果表明：在工作波长为390 nm的紫外波段,通过最优参数设计,其光场约束可达到较好的深亚波长水平,同时保持高的品质因数、低的损耗和阈值。与平坦金属层结构相比,在相同的参数下,所设计的结构具有更强的光场限制能力和更强的微腔束缚能力,有潜力使纳米设备趋于小型化和集成化。     

真空环境中紫外脉冲激光对熔石英抗损伤能力的影响

在10-3Pa的高真空环境下,利用355nm的紫外脉冲激光以低于石英基片零概率损伤阈值的能量密度对其进行重复多次的全口径扫描,目的是为了研究石英基片在接受不同剂量的紫外激光辐照后其抗损伤能力的变化和原因.通过辐照过程中损伤点的扩展程度以及辐照后的抗损伤测量表明,高真空环境下紫外脉冲激光辐照后的石英基片抗损伤能力明显降低,降低的幅度更多的与其接受激光辐照的次数有关,辐照能量密度的影响相对较小;通过荧光及X射线光电子能谱(XPS)检测发现,紫外脉冲激光辐照后石英基片表面氧缺位的增加是导致其抗损伤能力下降的主要原因,其程度也直接与接受辐照的紫外脉冲激光剂量相关.     

衬底加温和后续热退火法形成纳米硅晶粒成核势垒的比较

在真空环境中,采用脉冲激光烧蚀技术,分别在衬底加温和室温条件下沉积制备了纳米Si薄膜.对在室温条件下制备得到的非晶Si薄膜,采用后续热退火实现其晶化.通过扫描电子显微镜、Raman散射仪和X射线衍射仪对制备的薄膜形貌、晶态成分进行表征,得到两种情况下纳米Si晶粒形成的阈值温度分别为700 ℃和850 ℃,通过定量计算比较了两种情况下晶粒成核势垒的大小,并从能量角度对阈值温度的差别进行了理论分析.     

Vector meson rescattering effect in understanding the threshold enhancement observed in J/ψ→γp

We propose one possible mechanism,i.e.,the vector meson （VV） rescattering effects,to interpret the near threshold narrow enhancement observed in J/ψ → γpp.The estimate indicates that these effects can give sizeable contributions to this channel,and a destructive interference between different rescattering amplitudes is required to reproduce the line shape of the data.     

Sc2O3替代层在532 nm高反膜中的应用

 将Sc₂O₃替代层引入到532 nm高反膜(HfO2/SiO2)n中,利用Sc₂O₃在盐酸中具有较好的溶解性这个特点,把膜层与基片脱离,以方便基片返修,缩短返修周期,降低成本。能量色散谱元素测试表明,脱离后Sc元素残留率为0。用Lamada900分光光度计、WykoNT1100轮廓仪和ZYGO干涉仪分别表征了替代层引入对高反膜的光谱、表面粗糙度和应力的影响,并测试了膜系在532 nm的激光损伤阈值的变化,结果表明Sc₂O₃替代层的引入对高反膜的性能几乎没有负面影响。     

Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

This paper studies the degradation of device parameters and that of stress induced leakage current (SILC) of thin tunnel gate oxide under channel hot electron (CHE) stress at high temperature by using n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with 1.4-nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. Based on the experimental results, it is found that there is a linear correlation between SILC degradation and V_h degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.     

Azimuthal dependence of the two-photon absorption coefficient for CdP2 crystals with tetragonal syngony

We studied the two-photon absorption coefficient (β) for cadmium diphosphide (CdP₂) single crystals in the tetragonal modification vs. the polarization azimuth (φ) of the incident light for intensities close to the optical breakdown (or optical damage) threshold for the crystal (11 MW/cm²). We have established that the value of β_max = 0.16 cm/MW is reached for φ = 0, i.e., for the ordinary wave. At the lasing frequency of a ruby laser, β_⊥/β_|| = 2.13, which suggests anisotropy of the two-photon absorption in the studied crystals. These dependences are needed for design and fabrication of quantum electronics and nonlinear optics elements whose operation is based on the use of the two-photon absorption effect for high radiation fluxes. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 117–121, January–February, 2009.     

平顶激光束诱导薄膜损伤阈值测量系统

为了满足快速、精确、定量地测量薄膜激光损伤阈值的要求,设计了平顶激光束诱导薄膜损伤阈值测量系统.介绍了损伤阈值测量的原理和方法,提出二分查找与顺序查找相结合的能量密度查找方式;根据分光镜的分光比及能量探测器示值求解辐照激光能量,用CCD成像法精密测量了作用在薄膜表面的激光光斑面积;基于小波变换法,通过图像处理精确识别了薄膜的损伤;建立能量密度与损伤几率坐标并进行最小二乘法拟合,对损伤阈值进行了标定.对45°高反射膜分别进行了高斯光束辐照和平顶光束辐照的测量实验,结果表明:高斯光束辐照测量的损伤阈值为9.95J/cm~2,平顶光束辐照测量的损伤阈值为13.98J/cm~2,平顶光束诱导比高斯光束诱导的损伤阈值高40.5%.     

Mie散射激光雷达回波信号小波去噪方法

针对强背景光下,Mie散射激光雷达回波信号所含噪声的特点,提出小波滤波消噪方法.该方法通过小波变换分离出背景光的直流部分,并利用小波软阈值消除来自背景光的白噪声和探测系统的电噪声.为了验证该方法的有效性,提取并反演了Mie散射激光雷达系统实际探测得到的大气回波信号.反演结果显示有效探测距离从2.5km提高到5km,表明该方法能够在白天背景下有效降低Mie散射激光雷达回波信号中的电噪声和背景光的噪声污染.