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441.
The supremum metric D between fuzzy subsets of a metric space is the supremum of the Hausdorff distances of the corresponding level sets. In this paper some new criteria of compactness with respect to the distance D are given; they concern arbitrary fuzzy sets (see Theorem 7), fuzzy sets having no proper local maximum points (see Theorem 12) and, finally, fuzzy sets with convex sendograph (see Theorem 13). In order to compare results with a previous characterization of compactness of Diamond–Kloeden, the criteria will be expressed by equi-(left/right)-continuity. In the proofs a first author's purely topological criterion of D  -compactness and a variational convergence (called ΓΓ-convergence) which was introduced by De Giorgi and Franzoni, are fundamental.  相似文献   
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444.
From Chebyshev’s method, new third-order multipoint iterations are constructed with their efficiency close to that of Newton’s method and the same region of accessibility.  相似文献   
445.
We introduce the notion of the (one-parameter subgroup) γγ-condition for a map ff from a Lie group to its Lie algebra and establish αα-theory and γγ-theory for Newton’s method for a map ff satisfying this condition. Applications to analytic maps are provided, and Smale’s αα-theory and γγ-theory are extended and developed. Examples arising from initial value problems on Lie group are presented to illustrate applications of our results.  相似文献   
446.
Based on ab initio   electronic structure calculations by self-interaction-corrected local-density-approximation (SIC-LDA) with the Korringa–Kohn–Rostoker coherent potential approximation (KKR-CPA), we propose a materials design for high efficiency photovoltaic solar cells (PVSCs). It is shown that (i) the concentration dependence of the mixing energy of CuIn1−xGaxSe2CuIn1xGaxSe2 shows upward convexity, thus this system favors phase separation. Due to the type II band alignment between CuInSe2CuInSe2 and CuGaSe2CuGaSe2, efficient electron–hole separation is realized in decomposed phase of this system. (ii) CuIn1−xZn0.5xSn0.5xSe2CuIn1xZn0.5xSn0.5xSe2 has a direct band gap and no impurity state appears in the gap. Therefore, cost reduction is possible by using Zn and Sn instead of In. (iii) n-type CuAl1−xSnxS2CuAl1xSnxS2 and p-type Cu1−xVCuxAlS2Cu1xVCuxAlS2 have negative activation energy for doped impurities and are expected to be low-resistive transparent conducting sulfides, which should be useful for CuInSe2CuInSe2-based PVSCs.  相似文献   
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