APPROXIMATING ANALYSIS OF A KIND OF REPAIRABLE STANDBY SYSTEMS

ＬＩＷＥＩ（李伟）；ＣＡＯＪＩＮＨＵＡ（曹晋华）（ＩｎｓｔｉｔｕｔｅｏｆＡｐｐｌｉｅｄＭａｔｈｅｍａｔｉｃｓ，ｔｈｅＣｈｉｎｅｓｅＡｃａｄｅｍｙｏｆＳｃｉｅｎｃｅｓ，Ｂｅｉｊｉｎｇ１０００８０，ＣｈｉｎａａｎｄＡｓｉａ－ＰａｃｉｆｉｃＯｐｅｒａｔｉｏ...     

A nonparametric approach for selecting the most reliable population

In this paper, we present a nonparametric method for selecting the most reliable population in reliability life testing. We propose a new statistic,the transitional order statistic, and give a natural selection rule based on this statistic. Under the proposed selection rule, the probability of correct selection is calculated by defining a nonlinear indifference zone under the least favorable configuration. Finally, we present an example to illustrate the selection procedure and validate the results.     

Lifetime distribution and estimation problems of consecutive-k-out-of-n:F systems

Explicit formula is given for the lifetime distribution of a consecutive-k-out-of-n:F system. It is given as a linear combination of distributions of order statistics of the lifetimes of n components. We assume that the lifetimes are independent and identically distributed. The results should make it possible to treat the parametric estimation problems based on the observations of the lifetimes of the system. In fact, we take up, as some examples, the cases where the lifetimes of the components follow the exponential, the Weibull, and the Pareto distributions, and obtain feasible estimators by moment method. In particular, it is shown that the moment estimator is quite good for the exponential case in the sense that the asymptotic efficiency is close to one.This research was partially supported by the ISM Cooperative Research Program (94-ISM-CRP-5).     

分光计调整方法的改进及白光色散研究

普通物理实验中使用分光计观察白光散射,测量三棱镜顶角,最小偏向角等。但在测量前需借助三棱镜调整分光计,有人通过理论分析发现传统的调节方法存在误调和误差,并提出了改进的实验调整方法。本文我们通过实验来验证该方法是否可行,并在实验中发现了其它的问题。     

大学物理实验教学仪器的改进

通过仪器电路改进、程序编写等工作,成功改进了数字电流表。改进后的电流表具有量程自动切换功能,实现了对原有数字电流表的量程保护。经实验测试表明,改进后电流表运行稳定,测试结果正确。     

电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究

随着半导体技术的进步, 集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域, 使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战. 进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估. 参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取, 对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究. 通过试验对比, 定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响, 得出了氧化物陷阱电荷和界面态随着时间参数的变化, 在不同阶段对器件参数的影响. 结果表明, 总剂量效应与电应力的共同作用将加剧器件敏感参数的退化, 二者的共同作用远大于单一影响因子.     

氯化锌修饰蓝光量子点发光二极管EI北大核心CSCD

采用氯化锌(ZnCl_(2))修饰镉基CdSe/ZnS蓝光量子点(B-QD)薄膜,发现与量子点表面结合力更强的ZnCl_(2)能够部分取代量子点长链配体油酸,有效钝化量子点表面缺陷,提高薄膜的荧光量子效率(PLQY)。此外,由于ZnCl_(2)具有偶极作用,使量子点真空能级提高0.2 eV,一方面可改善电子和空穴载流子注入平衡,另一方面可有效降低发光器件的启亮电压,提高器件的发光寿命。这种无机配体修饰量子点薄膜的方法可能为解决蓝光量子点发光二极管(B-QLEDs)因空穴注入困难和量子点表面缺陷导致器件性能不高的问题提供一个有效思路。     

直接辐射式扬声器系统的低频效率计算公式*

效率是扬声器系统的重要性能指标,然而常用的标称效率在低频范围并不适用。本文研究直接辐射式扬声器系统的低频效率,推导了基于TS参数的低频效率计算公式。针对封闭式扬声器系统和倒相式扬声器系统,开展实验验证,结果表明本文提出的计算公式得到的低频效率与实验测量得到的低频效率较为相符。进一步对比分析低频效率和标称效率,结果表明低频效率能够适用于低频,能准确地展示扬声器系统参数对效率的影响。利用本文提出的计算公式,有助于进一步优化提升扬声器系统的低频效率。     

Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

HL-2A装置的约束改善和边界净输入功率分析

在HL-2A装置孔栏位形放电的等离子体实验中,电子回旋辅助加热期间观察到了等离子体约束改善的现象,并对等离子体从低约束模式(L模)向约束改善模式转换时的等离子体线平均电子密度、等离子体储能、分界面内辐射功率、能量约束时间、H_α辐射等进行了研究。同时,分析了电子密度和等离子体辐射功率的空间分布随时间的演化。对改善约束的相关功率(辅助加热、欧姆加热功率和损失功率)进行了分析,并研究了等离子体约束改善转换时的边界净输入功率(阈值)与电子线平均密度和环向磁场的关系。