染料掺杂光子晶体荧光带隙边缘的激射研究

利用激光全息光刻技术, 在重铬酸盐明胶 感光材料中制备了掺杂有机染料的层状光子晶体. 在532 nm纳秒脉冲激光激励下, 样品的荧光光谱表现出良好的带隙特征; 随着抽运能量的增加, 在荧光带隙带边位置获得了激射光, 并进一步研究了光子晶体的带边位置与染料荧光峰的匹配对激射的影响.带边位置越靠近染料的荧光峰, 激射阈值越低, 反之则不易产生激射.该研究为超低阈值光子晶体激光器的发展提供了思路和方法. 关键词： 全息光刻 光子晶体 荧光带隙 低阈值激射     

Color centers in irradiated MgF2

Abstract

Color centers in rutile-structured MgF₂ single crystals irradiated at 20K/360K by reactor neutrons are investigated spectroscopically at LNT. Four different types of the F-F vacancy bond in MgF₂ are possibly identified to the observed absorption bands as due to the F₂ centers; instead of previous assignments, the 300nm band to the F₂(D_2h), the 325nm band to the F₂(C₁), the 355nm band to the F₂(C_2v), and the 400nm band to the F₂(C_2h) centers.     

Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene

We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D + G bands, and located at ~3240 and ~ 4260 cm^–1, respectively. The graphene thickness and stacking geometry effects for these two modes are systematically studied. The features of the 2D' band, which arises from intravalley double resonance, are not sensitive to the variation of thickness with single Lorentzian peak and fixed linewidth. We explain it theoretically by calculating the phonon dispersion mode in k‐space and find that the flat band region of longitudinal optical phonon near Γ point is the mechanism leading to the 2D' band nonsplit. With the thickness increasing, the band position exhibits blueshift and the linewidth increases for the 2D + G band. With changing thickness and stacking geometry of graphene, the intensities of these two high‐frequency bands show obvious different evolution compared with that of G band. Copyright © 2012 John Wiley & Sons, Ltd.     

The effect of the location of stage-I fatigue crack across the persistent slip band on its growth rate – A 3D dislocation dynamics study

Abstract

A 3D dislocation dynamics study to ascertain the probable path of stage-I fatigue crack propagation across the persistent slip band (PSB) in austenitic stainless steel is presented. Cyclic plasticity and the resulting crack tip slip displacement (CTSD) are evaluated for cracks of varying length introduced at PSB-center and at two PSB-matrix interfaces. CTSD attains high value at either of the two interfaces irrespective of the proximity of crack front to the grain boundary. Further, a difference in microcrack propagation rate is also observed among the two interfaces. The present results assert microcrack propagation preferrentially along one of the two PSB-matrix interfaces rather than at the PSB-center. A pre-existing PSB dislocation structure localises the cyclic slip for crack lengths up to approximately half of the grain depth for an applied strain range of 2 × 10^?4.     

Some exact solutions of generalized Zakharov system

In this paper, we seek exact solutions of generalized Zakharov system. We use extended trial equation method to obtain exact solutions of this system. Consequently, we obtain some exact solutions including soliton solutions, rational, Jacobi elliptic and hyperbolic function solutions of this system by using extended trial equation method.     

Theory of Economic Equilibrium

Abstract

New concepts of economics such as an average demand matrix of society, strategy of a firm and consumer behaviour, and others are introduced. We give sufficient conditions for technological mapping under which there exist both the Walras equlibrium state and optimal Walras equilibrium one. We obtain the set of equations which equilibrium price vector solves. The theory of interindustry economic equilibrium is developed. The model of economy with regular interests of consumers is proposed.     

一种新型左手材料的设计和特性研究

通过对左手材料的理论分析,设计了一种宽频带左手材料结构单元.该结构单元由一个矩形闭合环和十字型结构构成的谐振器和金属线组合而成.这种新结构中的谐振器实现负磁导率,金属线实现负介电常量,经过合理的设计,可以在某一频段内使得磁导率和介电常量同时为负,即具有负的有效折射率和正的波阻抗.数值仿真结果表明:在其工作频段内存在一个通带并且在17.6～29.0 GHz频率范围内折射率实部为负,而虚部接近于零;同时在该频率范围内波阻抗实部大于零,从而说明了该左手材料具有左手特性.除此之外,相对左手带宽达到48.9％,远远优于传统的左手材料.     

基于氧气A吸收带的baseline拟合距离反演算法

目标红外被动测距的实现同气体及其波段的选取密切相关。氧气A吸收带具有独特的谱线结构,对于火箭羽流或者高温辐射体的距离探测,氧气A吸收带是最佳的距离反演通道。利用该特点,详细研究了逐线积分算法(LBLRTM),并设计了氧气A带吸收系数及标准光谱计算软件;利用A吸收带吸收光谱带外数据,采用多项式拟合方法,实现基线(baseline)拟合,进而得到带平均透过率;在不同的距离条件下,将两种带平均透过率进行对比,误差在1.9%左右,拟合精度较高,该方法为后续距离的精确反演提供了理论依据。     

锑掺杂氧化锡粉体的太赫兹透射特性

以SnCl45H2O和SbCl3为原料,采用液相化学共沉淀法制备锑掺杂氧化锡（ATO）粉体。分析了不同Sb掺杂质量分数条件下,ATO粉体的禁带宽度变化,并对材料在0.2~1.6 THz波段的透射时域和频域谱,以及吸收和屏蔽参数进行了对比分析。结果表明,ATO粉体的禁带宽度随着Sb掺杂量的增加先减小后增大;同时,ATO粉体对THz波的吸收系数随着Sb掺杂量的增加先增大后减小,当Sb掺杂质量分数为9%时,ATO的吸收系数在1.25 THz处达到最大值156.5 cm-1,屏蔽效能在1.24~1.60 THz范围内最高达到45.0 dB。     

4H-SiC肖特基二极管的电荷收集特性

针对极端环境下耐辐照半导体核探测器的研制需求,采用耐高温、耐辐照的4H碳化硅(4H-SiC)宽禁带材料制成肖特基二极管,研究了该探测器对241Am源粒子的电荷收集效率。从电容-电压曲线得出该二极管外延层净掺杂数密度为1.991015/cm3。从正向电流-电压曲线获得该二极管肖特基势垒高度为1.66 eV,理想因子为1.07,表明该探测器具备良好的热电子发射特性。在反向偏压高达700 V时,该二极管未击穿,其漏电流仅为21 nA,具有较高的击穿电压。在反向偏压为0~350 V范围内研究了该探测器对3.5 MeV 粒子电荷收集效率,在0 V时为48.7%,在150 V时为99.4%,表明该探测器具有良好的电荷收集特性。