半无限规划与方向导数

本文对半无限凸规划提出一个用方向导数表述的对偶问题，其对偶间隙为零．     

Reflection from 1D quasi-periodical structures

A theoretical investigation of 1D stationary and transient quasi-periodical dielectric structures is presented. A new approach for solving the problem of field interaction with such structures common for both stationary and transient cases, based on integral equations for the fields in transient media, is proposed. Some special cases of quasi-periodical structures with doubled quasi-periodicity are investigated numerically, showing that an additional complexity of the structure allows to obtain good filtering properties with a small number of quasi-periods. Transient structures with the same spatial dependencies, but with a time-dependent permittivity were also investigated.     

强流RFQ的稳定性设计研究

对强流RFQ耦合间隙的确定、二极模稳定杆的设计进行了详细的研究和讨论.利用现有的RFQ冷模,进行了本征模频率的测量、场分布的调试和测量、二极模稳定杆的试验.并通过与模拟结果的比较,验证了模拟程序在RFQ腔体设计中的可靠性.同时,对影响RFQ稳定性设计的物理进行了有益的探讨.     

光子晶体中四能级系统的量子相干效应

研究了处于光子带隙材料中的四能级原子系统的电磁感应透明、自发辐射和光子开关效应，分析了其稳态与瞬态特性, 发现特殊的模密度能够导致反常的吸收、色散、自发辐射及瞬态无反转增益, 并可以通过外加调制场进行控制.详细讨论了特殊频率处模密度的变化对透明窗口和光子开关效应的影响. 关键词： 光子带隙材料 电磁感应透明 模密度 光子开关     

Flexural vibration band gaps in a thin plate containing a periodic array of hemmed discs

Using a periodic expansion by means of the Bloch theorem, the flexural vibration band gaps are studied in a thin plate with two-dimensional ternary locally resonant structures, i.e. a thin epoxy plate containing a periodic square array of lead discs hemmed around by rubber. The full band gaps of flexural vibration in the thin plate are obtained within which sound and vibration will be forbidden. The numerical results are used to show how the width of the first full band gap depends on the radius ratio of lead disc to hemmed disc, filling fraction, lattice constant (distance between the centers of the nearest lead discs) and thickness of the thin plate. It is observed that the gap width can be changed a lot by modulating these physical parameters.     

光子晶体的原理与应用

光子晶体是一种在微米、亚微米等光波长量级上折射率呈现周期性变化的介质材料，它使某些频率范围内的光子态密度大大降低．甚至完全形成光子禁带．本文介绍了光子晶体的原理、制备及应用．     

Deriving Energy-Gap of Some Nonlinear Hamiltonians by Invariant Eigen-operator Method

By virtue of the invariant eigen-operator method we search for the invariant eigen-operators for some Hamiltonians describing nonlinear processes in particle physics. In this way the energy-gap of the Hamiltonians can be naturally obtained. The characteristic polynomial theory has been fully employed in our derivation.     

Two-Step Structure Phase Transition,Dielectric Anomalies,and Thermochromic Luminescence Behavior in a Direct Band Gap 2D Corrugated Layer Lead Chloride Hybrid of [(CH3)4N]4Pb3Cl10

A direct band gap 2D corrugated layer lead chloride hybrid, [(CH₃)₄N]₄Pb₃Cl₁₀ ( 1 ), shows analogous topology to the {Mg₃F₁₀⁴⁻}_∞ layer in Cs₄Mg₃F₁₀, and with the (CH₃)₄N⁺ cations locating in the inorganic layer voids and between the interlayers. Two reversible structural phase transitions occur in 1 at 225/210 K and 328/325 K upon heating/cooling, respectively. On going from the low- to intermediate-temperature phase, the space group changes from P2₁/c to Cmca, and the crystallographic axis perpendicular to the layers is doubled with the order–disorder transformation of (CH₃)₄N ⁺ cations between the interlayers. The intermediate- and high-temperature phases are isomorphic with similar cell parameters and packing structure; their main difference concerns the disorder degree of the (CH₃)₄N ⁺ cations between the interlayers. The two-step structural phase transitions lead to dielectric anomalies around the corresponding T_c. Interestingly, 1 shows multiband emission, originating from the recombination of exciton and emission of defects. Moreover, 1 exhibits divergent thermochromic luminescent features around the T_c on the intermediate to low temperature transition.     

Controlling the stability and the electronic structure of transition metal dichalcogenide single layer under chemical doping

By means of ab initio calculation based on density-functional theory (DFT), we have investigated the electronic and optical properties of single layer MoSe₂ under chemical doping by various groups, such as ?H, ?OH, ?NH₂ and ?CH₃. This work is generalized for all polymorph 1H, 1T, 1T′ and the new investigated phase 1T″. We found that all those functional groups (FG) bonded covalently to the chalcogen atom (Se). The evaluation of adsorption energy shows that the hydrogen atom binds more strongly than other functional groups in particular with the T phase. Furthermore, the attachment of functional groups to T-MoSe₂ leads to dramatic changes to the structure stability and the optoelectronic properties of the material by tuning its band gap from metallic to a semiconductor. Also, we found that the band gap is strongly depending on the type and the densities of dopants.