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91.
By means of cocycle techniques in a recent paper, the global dynamics of mean field-boson couplings has been studied. Here, by restricting to the bosonic system the infinite time limit (t ) for very general initial states, one obtains time-asymptotic states on the bosonicC *-Weyl algebra, in which one partially rediscovers the collective ordering of the infinite mean field lattice.  相似文献   
92.
We perform first-principles spin polarized calculations of the electronic structure of Ti-doped in ZnO. Ferromagnetism in Ti-doped ZnO is identified, which is in agreement with recent experimental and calculated results. A net magnetic moment of 0.715μB is found per Ti. At a Ti concentration of 12.5%, total energy calculations show that the ferromagnetic state is 68 meV lower than the antiferromagnetic state. The electronic states near Fermi energy are dominated by strong hybridization between O 2p and Ti 3d, which is just the origin of impurity band in Ti-doped ZnO and also implies that the Ti-O bond is quite covalent instead of purely ionic. Since there is no magnetic element in this compound, Ti-doped ZnO appears to be an unambiguous dilute magnetic semiconductor.  相似文献   
93.
The present work aims to correlate, in time, macroscale and microscale phenomenological evolutions of the microstructure of Fe and FeZn alloys processed by mechanical milling (MM) and alloying (MA), respectively. Powders were characterized for particle size distribution (PSD), particle morphology (optical microscopy, OM, scanning electron microscopy, SEM), microhardness, crystallite size, differential scanning calometry (DSC) and transmission electron microscopy (TEM). Two macroscopic regimes of PSD behavior were distinguished: the first one dominated by the cold welding process; and, the other where both fracture and agglomeration play a significant role. Solid solubilization of Zn on bcc Fe was found to reduce the final microhardness as well as increase the lattice parameter and is very well predicted by Miedema's thermodynamical approach. Microhardness and solid solution formation kinetics were correlated in time and both could be precisely described by a logistic function. After 5 h of planetary milling, microhardness and the lattice parameter become stable as well as the PSD and particle morphology, indicating that the system has already reached steady state. Indeed, this condition can be monitored by both macroscopic and microscopic parameters. Prior to an homogeneous powder, DSC results suggest an endothermic solid-state amorphization reaction for samples processed for up to 1 h as a result of the formation of clean Fe/Zn interfaces during MA.  相似文献   
94.
Zinc oxide (ZnO) films were deposited on glass substrates by the sol-gel dip coating method using acrylamide route. The films were characterized by X-ray diffraction studies which indicated wurtzite structure. Optical absorption measurements indicated band gap in the range 3.17-3.32 eV. XPS studies indicated the formation of ZnO. The resistivity of the films were in the range 1000-10,000 ohm cm.  相似文献   
95.
Nanoparticulate TiO2 is of interest for a variety of technological applications, including optically transparent UV-filters and photocatalysts for the destruction of chemical waste. The successful use of nanoparticulate TiO2 in such applications requires an understanding of how the synthesis conditions effect the optical and photocatalytic properties. In this study, we have investigated the effect of heat treatment temperature on the properties of nanoparticulate TiO2 powders that were synthesised by solid-state chemical reaction of anhydrous TiOSO4 with Na2CO3. It was found that the photocatalytic activity increased with the heat treatment temperature up to a maximum at 600 °C and thereafter declined. In contrast, the optical transparency decreased monotonically with the heat treatment temperature. These results indicate that solid-state chemical reaction can be used to prepare powders of nanoparticulate TiO2 with properties that are optimised for use as either optically transparent UV-filters or photocatalysts.  相似文献   
96.
运动目标的检测及跟踪技术广泛应用于军事与民用领域。传统基于PC的目标跟踪系统不能满足对体积、功耗及便携性的需求,基于ARM处理器S3C2440A和嵌入式Linux操作系统构建了一个比较完整、实用的目标跟踪系统。该系统利用摄像头采集运动目标图像,处理器进行数字图像处理,LCD显示跟踪目标。阐述了实现原理及图像获取、目标检测、图像分割和目标跟踪算法程序流程。通过实际测试,该系统能满足对低速运动目标的检测、识别和跟踪,且具有较好的实时性和稳定性。  相似文献   
97.
利用玻璃平行平板构成简单的横向剪切干涉仪可以观察到单薄透镜形成的准直光束的剪切干涉条纹,由干涉条纹分布求出对应的几何像差和离焦量.用焦距为190 mm的单薄透镜做实验,实验结果与计算机模拟结果符合,说明可以从剪切干涉条纹的分布求出透镜的轴向调整误差和初级球差.  相似文献   
98.
介绍了对HL-2A装置中平面边缘等离子体的单探针测量。单探针是安装在可径向移动、并可绕轴旋 转360o的传动杆上的。在1MHz的快速采样频率下,测量了主等离子体边缘的温度、密度、悬浮电位、空间电位、极 向等离子体流速的径向分布。测量的结果表明,利用单探针测量的主等离子体边缘参数与朗缪尔四探针测量结果 基本一致。  相似文献   
99.
Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr2O3 using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and bc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr2O3). A second phase, namely θ-(Al,Cr)2O3, was revealed by XRD in the sample containing 9.60 wt% Cr2O3. The structure of mullites was refined by the Rietveld method, location of Cr3+ was performed by the EPR spectroscopy. At low chromium doping level (Cr2O3 content less than ∼5 wt%) Cr3+ ions were substituted for Al3+ in the AlO6 octahedra of the mullite structure (M1 site). For higher doping level, Cr3+ ions were additionally substituted for Al3+ in the AlO6 octahedra of the second phase [θ-(Al,Cr)2O3 at 1400 °C, or α-(Al,Cr)2O3 at 1600 °C] which segregated in the system. Substitution of Cr3+ for Al3+ on M1 site in the mullite structure resulted in increase of average distances in (M1)O6 octahedron and decrease of average distances in T*O4 tetrahedron, while average distances in TO4 tetrahedron stayed almost constant.  相似文献   
100.
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes.  相似文献   
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