Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

各向异性材料中共线刚性线夹杂的纵向剪切问题

本文研究各向异性材料中共线刚性线夹杂，（有时称作“硬裂纹”或“反裂纹”问题）的纵向剪切问题。利用复变函数方法，提出了一般问题的公式和某些实际重要问题的封闭形式解，考察了刚性线端点附近的应力分布．从本文解答的特殊情形，可以直接导出各向同性材料相应问题的公式和结果，包括某些已有的结果￣［７］．     

A rate-dependent algebraic stress model for turbulence

Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.     

TERNARY OPERATIONS AS PRIMITIVE NOTIONS FOR PLANE GEOMETRY II

We proved in the first part [1] that plane geometry over Pythagorean fields is axiomatizable by quantifier-free axioms in a language with three individual constants, one binary and three ternary operation symbols. In this paper we prove that two of these operation symbols are superfluous.     

Ab initio study of sodium intercalation into metal oxides

Using the full-potential linearized augmented plane wave (FP-LAPW) method, we have studied the effect of chemistry on the average intercalation voltage (AIV) caused by the Na ions intercalating into transition metal oxides. The effect of transition metal was systematically studied by varying M=Co, Ni and Mn in NaMO₂ and fixing the α-NaFeO₂ layered structure. The effect of the guest atoms into the host material is discussed in terms of the structural and electronic properties. Comparatively to Li intercalation, a significant electron transfer towards transition metal was found. This observation suggests that the transition metal contribute to the AIV determination and confirms the common assumption that intercalated electron reduces M⁴⁺ to M³⁺.     

Stress concentration around a circular hole in a transversely isotropic spherical shell

Analytical expressions for the stresses near a circular hole in a transversely isotropic shallow spherical shell under uniform pressure are derived. The form of the solution depends on the range of change in the compliance to transverse shear. The influence of the relative radius of the hole and the compliance to transverse shear on the stress concentration is analyzed.__________Translated from Prikladnaya Mekhanika, Vol. 40, No. 12, pp. 99–106, December 2004.     

A two step algorithm for solving a large scale semi-definite logit model

This paper proposes a two step algorithm for solving a large scale semi-definite logit model, which is appreciated as a powerful model in failure discriminant analysis. This problem has been successfully solved by a cutting plane (outer approximation) algorithm. However, it requires much more computation time than the corresponding linear logit model. A two step algorithm to be proposed in this paper is intended to reduce the amount of computation time by eliminating a certain portion of the data based on the information obtained by solving an associated linear logit model. It will be shown that this algorithm can generate a solution with almost the same quality as the solution obtained by solving the original large scale semi-definite model within a fraction of computation time.     

等厚双层涂层材料受集中力作用的平面问题理论解

界面应力的正确评价是分析薄膜涂层材料力学特性的难题之一。利用镜像点法和Dirichlet等值性原理，本文推导了等厚双层薄膜涂层材料受表面集中力作用的平面问题理论解。该显式理论解是以固定在各镜像点上的局部坐标系下的Goursat应力函数的形式给出的。对应于高阶镜像点的应力函数，可通过递推的方法，从对应于低阶镜像点的应力函数求得，而且也易于计算机编程。随着镜像点阶数的增大，它与界面的距离也越来越大，因而相对应的应力函数对界面应力的影响越来越小。最后的算例表明，只需考虑前面有限个镜像点，便可获得足够精度的解。该理论解可作为格林函数，以求解复杂问题的理论解，也可用作边界元法的基本解，提高数值计算的精度和效率。     

会聚厄米-双曲余弦高斯光束的光强分布和焦移

 基于厄米-双曲余弦高斯光束通过无光阑限制薄透镜聚焦的解析传输公式，研究了厄米-双曲余弦高斯光束聚焦区域的光强分布，并对光束的焦移进行了分析，讨论了偏心参数对光强主极大位置的影响。结果表明：TEM₁₁模厄米-双曲余弦高斯光束的相对焦移（绝对值）随偏心参数和菲涅尔数的减小而增大，菲涅尔数较大时相对焦移趋于零。TEM₂₂模光束在偏心参数小于0.54时，轴外与轴上光强极大值的比值大于1，此时光强主极大在轴外，偏心参数大于0.54时则相反；在偏心参数等于0.54时比值为1，此时光束有两个主极大，偏心参数愈大光强愈集中于轴上。使用LW法和GH法得到的TEM₂₂模光束的相对焦移（绝对值）随偏心参数和菲涅尔数的变化规律与TEM₁₁模光束一致，但相同参数下使用这两种方法得出的具体结果不同。     

Thickness decrease of a grafted polyelectrolyte membrane exposed to shear flow

The effect of the shear flow on the thickness change of a polyelectrolyte membrane grafted onto a glass substrate was directly investigated with a flow cell combined with a confocal laser scanning microscope. The membrane thickness decreased proportionally to an increase in the shear stress of the flow when the shear rate exceeded a critical value of 1 s^?1. The higher the ionic strength was of the fluid, the greater the thinning effect was. The correlation between the critical shear rate and the relaxation of the polymer in the gel membrane was examined. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2808–2815, 2003