An infinite dimensional affine nil algebra with finite Gelfand-Kirillov dimension

The famous 1960's construction of Golod and Shafarevich yields infinite dimensional nil, but not nilpotent, algebras. However, these algebras have exponential growth. Here, we construct an infinite dimensional nil, but not locally nilpotent, algebra which has polynomially bounded growth.

     

Hilbert algebras as implicative partial semilattices

The infimum of elements a and b of a Hilbert algebra are said to be the compatible meet of a and b, if the elements a and b are compatible in a certain strict sense. The subject of the paper will be Hilbert algebras equipped with the compatible meet operation, which normally is partial. A partial lower semilattice is shown to be a reduct of such an expanded Hilbert algebra i ?both algebras have the same ?lters.An expanded Hilbert algebra is actually an implicative partial semilattice (i.e., a relative subalgebra of an implicative semilattice),and conversely.The implication in an implicative partial semilattice is characterised in terms of ?lters of the underlying partial semilattice.     

On the Decomposition of Hopf Module Coalgebra

In1969,Sweedler[1]giventhedecompositiontheoreyofcoalgebraswhicharecocommu-tative.In1975,Kaplansky[2]showedthatanycoalgebracanbeuniquelydecomposedintoadirectsumofitsindecomposablesubcoalgebras.From1978to1992,Shudo[3]andXu[4]consructuredtheindecomposabledirectsumcomponentsofacoalggebra,viadefineequivalenceralationforthesetofsimplesubcoalgebras.Asweknow,themodolecoalgebraisthennaturalgeneralizationofcoalgebra.AndittakesplayanimportentroleintheDrinfelddouble.Inthispaper,wediscussthedecompositio…     

关于循环阵列码

本文用代数观点来研究循环阵列码,证明了一般的阵列码是一些极小循环阵列码的直和,并且对极小循环阵列码给出了明确的刻画．当有限域的特征不整除群的阶时,给出了直接写出相应的多项式环的本原幂等元的方法,从而可以直接写出所有的极小循环码．     

von Neumann代数中套子代数上的Lie同构

本文给出因子von Neumann代数中的幂等算子在广义Lie积下的一个刻画; 得到因子von Neumann代数中套子代数的幂等算子在Lie积下的一个特征．作为应用, 研究了因子von Neumann代数中套子代数上的Lie同构,并证明因子von Neumann 代数中套子代数之间的Lie同构,要么是同构与广义迹之和,要么是负反同构与广义迹之和．     

TUHF代数上的Lie导子

证明了TUHF代数丁上的Lie导子L形如D l．其中D是T上的结合导子，l是从T到它的中心Z上的线性映射且零化T中的括积．     

三级近似束流光学计算程序

为了精确计算束流在离子光学系统中的传输,用Visual FORTRAN 6.5语言编写了一个计算程序,长约13000行. 此程序可以计算由三圆筒单透镜、三膜片单透镜、双元筒透镜、均匀场静电加速管、磁四极透镜、六极磁铁、静电四极透镜、偏转磁铁、螺线管透镜、ExB~正交电磁场分析器、静电偏转器、漂浮管、QWR(Quarter Wave Resonators)和SLR(Split Loop Resonators)射频加速元件等元件任意组成的离子光学系统. 粒子轨迹的计算可精确到三级近似. 粒子的分布类型也可以有多种选择. 程序具有最优化计算功能,即可以自动调整元件的参数,以实现所需要的光学条件. 各元件之后的横向和纵向相图以及系统的束流包络线以图形方式显示在屏幕上.     

Isomorphically rigid algebras

Various classes of non-associative algebras possessing the property of being rigid under abstract isomorphisms are studied. Supported by RFBR grant No. 06-01-00159a. __________ Translated from Algebra i Logika, Vol. 46, No. 4, pp. 483–502, July–August, 2007.     

Dependence of calculated electron effective attenuation lengths on transport mean free paths obtained from two atomic potentials

We report changes in electron effective attenuation lengths (EALs) resulting from use of transport mean free paths (TMFPs) obtained from the Dirac–Hartree–Fock (DHF) potential instead of the Thomas–Fermi–Dirac (TFD) potential in an algorithm used in the National Institute of Standards and Technology (NIST) Electron Effective‐Attenuation‐Length Database (SRD 82). TMFPs from the former potential are believed to be more reliable than those obtained from the latter potential. We investigated changes in the EALs for selected photoelectron and Auger‐electron lines in four elemental solids (Si, Cu, Ag, and W), for Si 2p photoelectrons of varying energy in SiO₂, and for photoelectrons excited by Al Kα X rays in four candidate gate‐dielectric materials (HfO₂, ZrO₂, HfSiO₄, and ZrSiO₄). For each material, we computed the change in the average EAL for a range of overlayer‐film thicknesses from zero to a maximum value corresponding to attenuation of the substrate signal to 10% of its original value. This EAL change was a maximum for electrons emitted normally from the surface and decreased monotonically with increasing emission angle. The maximum EAL change varied between ?4.4% and 2.6% for the three groups of materials. We found that the maximum EAL change correlated mainly with the TMFP change. We found that TMFP changes in other solids could generally lead to maximum EAL changes between ?2.6% and 1.9% for electron energies between 500 and 2000 eV. For lower energies, the maximum EAL changes could be larger for some solids. Our revised EALs for Si 2p photoelectrons in SiO₂ excited by Mg and Al Kα X rays agree within 0.5% with values reported by Seah and Spencer from a detailed analysis of SiO₂ film‐thickness measurements by XPS and other techniques. Copyright © 2006 John Wiley & Sons, Ltd.