Spin transport in a chain of polygonal quantum rings with Dresselhaus spin-orbit coupling

Using a transfer matrix method, we investigate spin transport through a chain of polygonal rings with Dresselhaus spin-orbit coupling(DSOC). The spin conductance is dependent on the number of sides in the polygons. When DSOC is considered in a chain which also has Rashba spin-orbit coupling(RSOC) of the same magnitude, the total conductance is the same as that for the same chain with no SOC. However, when the two types of SOC have different values, there results a unique anisotropic conductance.     

考虑停靠站影响的公交运输系统模型

受停靠站影响,公共交通系统运行过程中容易产生集簇现象.本文细致地考虑了公交停靠站长度和停靠站在线路上的分布情况,构建了一个新的公交运输系统元胞自动机模型.数值模拟结果表明,在引入停靠站长度和停靠站分布两种因素后,模型在微观层面上更清晰地刻画了车辆在公交线路上的时空分布,再现了公交运行中的集簇现象,定量地评价了停靠站分布对车辆平均速度的影响.本研究对进一步认识集簇现象的形成机理和优化停靠站设计具有指导意义.     

Sr3YCo4-xMgxO10.5+δ(0≤x≤0.04)多晶的制备和热电输运性质研究

采用固相反应法制备Sr3YCo4-xMgxO10.5+δ(0≤x≤0.04)系列多晶,研究了Mg掺杂对体系结构、电输运和热电性质的影响.结果表明系列多晶为四方晶系,由于掺入的Mg2+(0.066 nm)部分替代了Co3+/4+(0.053 nm/0.061 nm),使晶格膨胀;多晶热电势在340~830 K随温度升高而下降,且Mg掺杂对热电势影响不大,表明Mg掺杂对体系载流子浓度影响不大;多晶电阻率在100~300 K随温度升高而降低,且随着掺杂量增加电阻率降低,结合扫描电镜观察到多晶的气孔数目减少、晶粒连接紧密和热电势的结果认为Mg掺杂对体系电输运性质的影响机制主要是使气孔、晶界散射作用减弱、载流子迁移率变大,而Mg掺杂对载流子浓度的影响是次要的.     

三角形石墨烯量子点阵列的磁电子学特性和磁输运性质

基于密度泛函理论的第一性原理计算方法,研究了三角形石墨烯纳米片用不同连接方式拼接而成的四种一维量子点阵列(1D QDAs)的磁电子学性质和磁输运性质.结合能计算表明所有1D QDAs是非常稳定的.特别是研究发现1D QDAs的电子和磁性质不仅依赖于磁性态,也明显依赖于连接方式,如在无磁态时,不同量子点阵列(QDAs)可为金属或窄带隙半导体.在铁磁态时,不同QDAs能为半金属(half-metal)或带隙不同的双极化磁性半导体.而在反铁磁态时,不同QDAs为带隙不等的半导体.这些结果意味着连接方式对有效调控纳米结构电子和磁性质扮演重要的角色.1D QDAs呈现的半金属或双极化磁性半导体性质对于发展磁器件是非常重要的,而这些性质未曾在本征石墨烯纳米带中出现.同时,我们也研究了一种阵列的磁器件特性,发现其拥有完美的(100%)单或双自旋过滤效应,尤其是呈现超过109%的巨磁阻效应.     

基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件

采用旋涂工艺将PbSe三维自组装超晶格镶嵌在两层聚合物PVP中,制备了基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件,器件结构为ITO/PVP/PbSe三维自组装超晶格/PVP/Al,研究了其电学性能和记忆效应。与参比器件ITO/PVP/Al相比,器件ITO/PVP/PbSe三维自组装超晶格/PVP/Al的电流-电压特性呈现出非常明显的电双稳特性和非易失记忆行为,在相同的电压下同时具有两种不同的导电状态：低电导的关态和高电导的开态。当PVP与PbSe超晶格的质量比为1：1时,器件性能最好,其最大电流开关比为7×10⁴,经过10⁴ s仍几乎无衰减。通过对电流-电压曲线拟合,利用不同的导电模型对器件的载流子传输机制进行了解释。结果表明,PbSe三维自组装超晶格作为电荷陷阱,可以俘获、储存及释放电荷,对器件的电双稳性能能起决定性作用。     

超热电子在稠密等离子体中输运的混合粒子模拟方法

相对论激光等离子体相互作用以及所产生的带电粒子束在高密度等离子体中的输运行为非常重要.该物理问题的数值模拟研究仍面临技术挑战.本文介绍一种粒子/流体混合模拟方法.该方法中超热电子采用动力学方法描述,背景冷的稠密等离子体采用简化的流体方程描述,适合于超热电子密度远小于背景电子密度,超热电子能量远大于背景电子温度.我们的三维并行混合模拟程序HEETS的模拟结果表明：背景材料的电离和电阻率模型至关重要,将严重影响高能电子输运过程的模拟.     

Dynamical temperature and generalized heat-conduction equation

By means of a dynamical non-equilibrium temperature we derive a generalized heat-conduction equation which accounts for non-local, non-linear, and relaxation effects. The dynamical temperature is also capable to reproduce several enhanced heat equations recently proposed in literature. The heat flux is supposed to be proportional to the gradient of the dynamical temperature, and the material functions are allowed to depend on temperature. It is also pointed out that the heat flux cannot assume arbitrary values, but it is limited from above by a maximum value which ensures that the thermal conductivity remains positive.     

Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Silicon junctionless nanowire transistor(JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing(SS),and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional(1D) subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm~2·V~(-1)·s~(-1),implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning.