Novel pattern formation in the collapse process of floating monolayer at the air-water interface

We have observed a remarkable two-armed spiral in the collapse process of a floating monolayer at the air-water interface by phase contrast microscopy. This demonstrates that the floating monolayer as a form of soft condensed matter reorganizes itself due to a certain kind of macroscopic or collective behavior of molecules as it collapses. This pattern formation is caused by the breakdown of a critical dynamical balance between the deformation of solid domain and the applied surface pressure. The fragility as well as the flexibility of the floating monolayer can be associated with the observed pattern growth. There are also observed interesting, periodically arranged collections of molecules in numerous collapsed regions. Received: 8 July 1997 / Accepted: 4 November 1997     

(p,n)和(p,2n)反应激发函数的系统学研究

从普朗克(Planck)黑体辐射公式和实验测量数据出发,采用唯象的方法提出了包含两个可调参量,入射质子能量从阈能到150MeV,靶核质量数在44相似文献   

Evanescent modes are not necessarily Einstein causal

Previously, experiments with microwave signals have shown that evanescent modes can travel faster than light. Several theoretical investigations have proven that in the case of signals with unlimitedly high frequency components, such superluminal velocities do not violate Einstein causality, thus group, signal, and energy velocities are c where c is the vacuum velocity of light. In this letter I shall show that frequency band limitation is a fundamental property of signals and that such signals containing only evanescent modes can violate Einstein causality. Received: 12 December 1998 / Accepted: 14 December 1998     

Bias and temperature dependence of the noise in a single electron transistor

Models generalizing the su (2) XX spin-chain were recently introduced. These XXC models also have an underlying su (2) structure. Their construction method is shown to generalize to the chains based on the fundamental representations of the A_m Lie algebras. Integrability of the new models is shown in the context of the quantum inverse scattering method. Their R-matrix is found and shown to yield a representation of the Hecke algebra. The diagonalization of the transfer matrices is carried out using the algebraic Bethe Ansatz. I comment on eventual generalizations and possible links to reaction-diffusion processes. Received: 24 June 1998 / Received in final form: 8 September 1998 / Accepted: 10 September 1998     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

计算机控制光学表面成形中大规模驻留时间求解

采用基于稀疏矩阵的大规模非负最小二乘法,对大口径、微浮雕结构光学元件加工中的驻留时间进行了分析与求解,并对该算法开展了正则化研究。仿真结果表明:与传统非负最小二乘法相比,基于稀疏矩阵的大规模非负最小二乘法精度高、效率快。采用该算法仿真加工平均振幅为1.177 6倍波长的大口径、微浮雕结构光学元件,误差面形均方根收敛至0.067倍波长。     

应用于地形匹配导航的激光高度计设计

为解决基于雷达高度表探测的地形匹配导航系统探测精度不高、易受电子干扰影响而失效、且在跨海飞行时无法导航的难题,设计了一种激光高度计来代替雷达高度表进行地形探测。采用二极管泵浦固体激光器技术设计激光发射装置,输出近红外/蓝绿双波长激光,既可以测量陆地地形高度,又可以穿透海水探测海底地形;并根据激光高度计拟达到的性能指标选择合适的光电探测器,优化设计了光学系统、扫描系统和信号处理系统。所设计的激光高度计具有体积小、重量轻、高重频、探测灵敏度高、抗电磁干扰能力强等特点。     

电场极化方向对自由空间电场测量的影响

介绍了自主研制的脉冲电场原始波形测量系统的模块组成与基本工作原理。针对在未知被测电场方向及复杂的电场环境下垂直干扰电场对自由空间电场测量产生的影响,通过建立自由空间电场测量系统前端的简化模型,对不同尺寸天线与屏蔽盒进行仿真计算。仿真计算结果与理论分析基本一致,结果表明：干扰电场响应信号与待测电场响应信号相差2个数量级以上,干扰电场的影响可忽略不计。     

快前沿直线脉冲变压器单级模块开关触发时延分散性实验研究

针对12支路并联的快前沿直线脉冲变压器单级模块,给出了模块的电路结构和关键器件参数,实验获得了12只多间隙气体开关的自击穿特性和触发特性。同时,还给出了快前沿直线脉冲变压器模块输出电流的初步实验结果,工作电压150 kV时,次级短路放电电流幅值为235 kA,电流前沿88.2 ns（10%~90%）。次级带0.58 负载情况下,输出电流幅值114.5 kA,电流前沿88.9 ns（10%~90%）。利用微分环测量了12只开关的触发时延分散性,结果表明100次实验开关触发时延分散性近似符合正态分布,开关触发时延分散性对输出电流的影响不大,电流幅值和前沿的标准偏差分别小于2.0%,4.0%,电流波形的畸变主要以平顶为主。     

P‐type tin‐oxide thin film transistors for blue‐light detection application

We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

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