Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.     

制导光缆中光纤寿命预期

介绍了光纤寿命预期的疲劳实验方法和筛选实验方法。采用这两种方法，利用电子万能材料试验机和光纤筛选复绕机对室温下光纤进行了疲劳性能实验。实验得出，在张力小于850g的情况下，制导光纤的寿命可以达到10年以上；光纤的韦伯参数md和疲劳参数nd的大小影响光纤寿命。实验表明，当光纤的使用状态受力较大时，或使用贮存状态相差较大时，宜选用动态方法进行寿命预期；当贮存和使用状态受力变化不大时，宜选用筛选复绕方法预期光纤寿命。制导光纤寿命模型宜选用动态疲劳模型，通信光纤可选用筛选实验模型。实验还表明，提高光纤的抗疲劳因子nd和减小光缆中光纤的应变，可以更好地保持光缆中光纤的使用寿命和可靠性。     

Preparations and photophysical properties of thermally activated delayed fluorescence materials based on N-phenyl-phenothiazine-S,S-dioxide

Four compounds (TM-1～4) based on N-(4-trifluoromethylphenyl)phenothiazine-S,S-dioxide and N-[3,5-bis(trifluoromethyl)phenyl]phenothiazine-S,S-dioxide are synthesized by Buchwald-Hartwig cross coupling reaction. The effect of different substituents in acceptors on the electronic, photophysical and electrochemical properties are studied by UV–Vis, fluorescence spectroscopy, cyclic voltammetry curves and theoretical calculations. The energy gaps (ΔE_ST) between singlet excited states (S₁) and triplet excited states (T₁) of these compounds decrease by addition of one para-substituted CF₃ or two meta-substituted CF₃ on N-phenyl in order to enhance the electron-withdrawing capability of the acceptors. Small ΔE_ST of these compounds range from 0.09 eV to 0.18 eV. TM-2～4 exhibit thermally activated delayed fluorescence (TADF) characteristics with short delayed fluorescence lifetimes (τ_d) within 0.69-1.16 μs. TM-3 emits blue light with an emission wavelength of 475 nm.     

Near infrared fluorescence and energy transfer in Ce/Nd Co-doped CaxSr1−xS

Novel near infrared (NIR) phosphors Ca_xSr_1−xS:Ce³⁺,Nd³⁺ were synthesized by a solid state reaction. The NIR emission was realized through an efficient absorption by the allowed 4f-5d transition of Ce³⁺ and efficient energy transfer to Nd³⁺ via well-matched energy levels. Ce³⁺ and Nd³⁺ content in CaS/SrS was optimized. It was found that CaS:Ce³⁺,Nd³⁺ gave much stronger NIR emission than that of SrS:Ce³⁺,Nd³⁺. Further studies on Ca_xSr_1−xS:Ce³⁺,Nd³⁺ indicated that both visible emission of Ce³⁺ and NIR emission of Nd³⁺ were observably affected by Ca/Sr ratio. The energy transfer efficiency, which can be estimated from fluorescence lifetime of Ce³⁺, increased from 52% to 74% for the Ca_xSr_1−xS:Ce³⁺,Nd³⁺ (x=0 to 1) series, accompanied with a shift of maximal emission wavelength of Ce³⁺ from 482 to 505 nm. The results showed that overlap between emission spectrum of Ce³⁺ and excitation spectrum of Nd³⁺ plays an important role in the energy transfer efficiency, and Ce³⁺ emitting in green or blue-greenish region sensitized the Nd³⁺ NIR fluorescence emission more efficiently than that in blue region.     

Highly alkoxylated PPV copolymers for PLEDs: Syntheses, optical properties and enhancement of device lifetimes

A series of solution processible light-emitting copolymers composed of tetraalkoxy-phenylenevinylene (TALK-PPV) and dialkoxy-phenylenevinylene (DALK-PPV) has been synthesized using the Gilch polymerization route. Thermal, optical and electrochemical properties of the synthesized copolymers [poly(TALKPV-co-DALKPV)s] have been investigated and compared with those of each homopolymers, poly[2-(3,7-dimethyloctyloxy)-3,5,6-trimethoxy]-1,4-phenylenevinylene] (TALK-PPV) and poly[2-(3′,7′-dimethyloctyloxy)-5-methoxy-1,4-phenylenevinylene] (DALK-PPV). The synthesized copolymers showed a high molecular weight (Mn=∼2-3.0×10⁵) and narrow polydispersity indices (∼3). Electroluminescent devices using the copolymers as the emissive layer have been fabricated with a configuration of ITO/PEDOT:PSS/polymers/Ca/Al. Interestingly the copolymer devices resulted in a more than 4-fold increase in device lifetime than the homopolymers, which might be due to the highly reduced steric hindrance of the polymer backbone by introducing DALKPV units between the adjacent highly alkoxylated TALKPV repeating units in the polymer backbone.     

合肥光源托歇克效应损失电子的探测

 束流寿命是衡量储存环性能的重要参数,直接影响着光源的正常运行。对于合肥光源（HLS）,托歇克（Touschek）寿命是影响束流寿命的重要因素。为了研究Touschek寿命,需要探测由于Touschek效应所损失的电子。介绍了束流寿命的概念,说明了Touschek效应的原理和机制,利用蒙特卡罗软件EGSnrc模拟计算了丢失电子与真空壁的相互作用,通过塑料闪烁体探测器和光电倍增管获得了由于Touschek效应丢失的电子所产生的信号,然后将信号经过放大甄别和符合处理后,用计数器测量了计数率。结果表明：由于Touschek效应而成对丢失的电子的确存在,且电子损失率随流强的降低而减小。这为下一步储存环的能量标定工作做好了前期准备。     

退火处理Fe43Co43Hf7B6Cu1非晶合金的正电子湮没研究

对熔体急冷法制备的Fe₄₃Co₄₃Hf₇B₆Cu₁非晶合金进行了200,300,400和500 ℃保温30 min的退火处理,用正电子湮没寿命谱、X射线衍射、穆斯堡尔谱等方法研究了退火后试样的结构及结构缺陷变化.结果表明,在非晶合金的制备态,正电子主要在非晶基体相空位尺寸的自由体积中湮没,湮没寿命τ₁为158.4 ps,强度I₁关键词： 43Co₄₃Hf₇B₆Cu₁非晶')" href="#">Fe₄₃Co₄₃Hf₇B₆Cu₁非晶 退火处理 正电子湮没寿命 结构与结构缺陷     

纳米Fe3 O4 颗粒的正电子湮没谱学研究

测量了磁性纳米Fe₃O₄颗粒的X射线衍射谱(XRD)、正电子湮没寿命谱(PALS)和符合多普勒展宽谱(CDBS),研究了不同压力和退火温度对磁性纳米Fe₃O₄颗粒物相、电子结构、缺陷及电子动量分布等的影响. XRD,PALS,CDBS测量结果表明:纳米Fe₃O₄颗粒的缺陷浓度随压力的增加而增大,但物相和缺陷类型并未发生变化;磁性纳米Fe₃O_{4< 关键词： 正电子 3}O₄')" href="#">Fe₃O₄ 寿命谱 多普勒展宽谱     

Tunable Fano resonances in the ballistic transmission and tunneling lifetime in a biased bilayer graphene nanostructure

Dynamics of the Dirac fermions, in particular the transmission coefficient and the resonant tunneling lifetime are studied across a bilayer graphene electrostatic double barrier structure modulated by an in plane homogeneous electric field. Asymmetric Fano type resonances are noted for the first time in the transmission spectrum of the bilayer graphene nanostructures and are found to be highly sensitive to the direction of incidence of the charge carriers and the applied homogeneous electric field. The effect of the external field on the extended and the evanescent modes is also analysed. Resonant tunneling lifetime is found to be highly anisotropic in nature. The chiral carriers are either accelerated or decelerated by the electric field depending on the energy of the quasi-bound states, the angle of incidence and the magnitude of the applied field. Effects of the external field on the localization of the chiral carriers are also discussed.     

First observation of trapped high-field seeking ultracold neutron spin states

Ultracold neutrons were stored in a volume, using a magnetic dipole field shutter. Radial confinement was provided by material walls. Low-field seeking neutrons were axially confined above the magnetic field. High-field seeking neutrons are trapped inside the magnetic field. They can systematically shift the measured neutron lifetime to lower values in experiments with magnetic confinement.