具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

The Choquet-Deny convolution equation μ=μ*σ for probability measures on Abelian semigroups

In this note, we characterize the regular probability measures satisfying the Choquet-Deny convolution equation =* on Abelian topological semigroups for a given probability measure .     

Asymptotic behavior of energy band associated with a negative energy level

The mathematical foundation of the tight binding approximation is given. If ₀ is a negative energy level of a real potentialq, then there exists an energy band for a one-dimensional chain with period 2T of the same atoms which lies near ₀. We study this band whenT tends to infinity.On leave of absence from the Department of Physics, Leningrad State University, Leningrad, USSR.     

Stochastic flows on a countable set: Convergence in distribution

Consider a sequenceF ₁,F ₂,... of i.i.d. random transformations from a countable setV toV. Such a sequence describes a discrete-time stochastic flow onV, in which the position at timen of a particle that started at sitex isM _n(x), whereM _n =F _n F _n–1 F ₁. We give conditions on the law ofF ₁ for the sequence (M _n) to be tight, and describe the possible limiting law. an example called the block charge model is introduced. The results can be formulated as a statement about the convergence in distribution of products of infinite-dimensional random stochastic matrices. In practical terms, they describe the possible equilibria for random motions of systems of particles on a countable set, without births or deaths, where each site may be occupied by any number of particles, and all particles at a particular site move together.     

Automorphisms on a Lie group contracting modulo a compact subgroup and applications to semistable convolution semigroups

Let ( _t ) _t0 be a -semistable convolution semigroup of probability measures on a Lie groupG whose idempotent ₀ is the Haar measure on some compact subgroupK. Then all the measures ₁ are supported by theK-contraction groupC _K() of the topological automorphism ofG. We prove here the structure theoremC _K()=C()K, whereC() is the contraction group of . Then it turns out that it is sufficient to study semistable convolution semigroups on simply connected nilpotent Lie groups that have Lie algebras with a positive graduation.     

Dynamics of the current-driven Josephson junction

The irreversible macroscopic dynamics of the Josephson junction coupled to external wires acting as a current source is derived rigorously from the underlying microscopic Hamiltonian quantum mechanics. The external systems are treated in the singular coupling limit. The use of this limit is explicitly justified via an interpretation of the singular coupling limit in terms of the relative magnitudes of system, reservoir, and coupling energies. The qualitative behavior of the macroscopic dynamical equations is shown to depend sensitively and crucially on the interaction between the wires and the superconductors and on the size of the wires: the dc Josephson effect only happens when one lets Cooper pairs be driven into the junction by collective (i.e., small) reservoirs.     

泡沫铅对VRLA电池负极活性物质结构及性能影响

0引言随着36V/42V汽车电源系统的提出,新一轮汽车用电池的竞争不断加剧。从目前情况看,铅酸电池由于具有成本低廉,使用可靠,原材料来源丰富,铅回收率可高达98%等优点,因此成为电动车电源最实际的选择之一[1]。但作为电动车用电池,需要克服其比能量低、充电接受能力差和负极硫酸盐化等缺点。为此各国科学家开展了大量的研究工作。最近报道用铸造多孔体作为敞口铅酸电池的集流体,它的比表面积为14cm2·cm-3,正极活性物质利用率上升到50%,远高于传统的铸造板栅[2]。在铅酸电池集流体研究领域里另一个重大进步,就是以R V C(R etic-ulated V i…     

Structural and electrochemical studies of annealed LiNiVO4 thin films

We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd.     

Kinetic model of a DC oxygen glow discharge

A simple kinetic model predicting the concentration of oxygen atoms, metastable singlet molecules O₂(a ¹) and negative ions O — in the positive column of a DC glow discharge is developed. The calculated O and O₂(a ¹) concentrations are compared to previously reported measurements for pressuresp=0.2–2 Torr and discharge currentsI=10–80 mA. The electron density calculated from the continuity equationj=n _e e v _d agrees well with experiment. The rate coefficients for electron impact processes used in the balance equations of O, O₂(a ¹), and O^– were taken from the literature as a function of the reduced electric fieldE/N forE/N=40–80 Td. A reasonable agreement is obtained between the model and the experiment with a set of 10 reactions for the production and destruction of the above-mentioned species     

Synthesis of photoreactive polyimide having indan structure

Polyimide containing an indan unit and alkyl moiety with a high molecular weight was prepared from 5,7‐diamino‐1,1,4,6‐tetramethylindan and 3,3′,4,4′‐benzophenone tetracarboxylic dianhydride. This polyimide was amorphous and soluble in common organic solvents, such as tetrahydrofuran, chloroform, and cyclopentanone. Thermogravimetry of the polyimide showed good thermal stability, indicating that a 10% weight loss of the polyimide was observed at 500 °C in nitrogen. The glass‐transition temperature of the polyimide was not observed by DSC measurement between room temperature and 400 °C at a heating rate of 10 °C/min (Apparatus: DSC3100 MAC Science Co., Ltd.). Transparency of the polyimide at 365 nm was 80%. The polyimide acted as a photosensitive resist of negative type by UV radiation. The resist had a sensitivity of 31 mJ/cm² and a contrast of 2.3 when it was developed with cyclopentanone at room temperature. © 2001 John Wiley & Sons, Inc. J Polym Sci Part A: Polym Chem 40: 423–428, 2002