剩余格与正则剩余格的特征定理

本文进一步研究了具有广泛应用的一类模糊逻辑代数系统——剩余格，并引入了正则剩余格的概念，对剩余格与正则剩余格的定义进行了讨论，给出了剩余格与正则剩余格的特征定理，其中包含剩余格与正则剩余格的等式特征，从而这两个格类都构成簇．本文还讨论了剩余格与正则剩余格公理系统的独立性，以及它们与相近代数结构的关系．     

幂格

本文引入了幂格的概念并讨论了其相关性质。     

加权测度下Banach 格值鞅的原子分解

本文讨论加权情形下Banach 格值鞅的原子分解并借助于原子分解研究Banach 格值鞅空间的内插理论.     

关于格的卡氏积的特征多项式和几何性

利用格L_i(i=1,2)的性质研究了它们的卡氏积L=L_1×L_2的性质,得到了L的秩函数、Mbius函数和特征多项式,并且由L_i的几何性证明了L的几何性.     

A Hierarchy of Integrable Lattice Soliton Equations and New Integrable Symplectic Map

Starting from a discrete spectral problem, a hierarchy of integrable lattice soliton equations is derived. It is shown that the hierarchy is completely integrable in the Liouville sense and possesses discrete bi-Hamiltonian structure. A new integrable symplectic map and finite-dimensional integrable systems are given by nonlinearization method. The binary Bargmann constraint gives rise to a Bäcklund transformation for the resulting integrable lattice equations. At last, conservation laws of the hierarchy are presented.     

A Solvable Decorated Ising Lattice Model

A decorated lattice is suggested and the Ising model on it with three kinds of interactions K₁, K₂, and K₃ is studied. Using an equivalent transformation, the square decorated Ising lattice is transformed into a regular square Ising lattice with nearest-neighbor, next-nearest-neighbor, and four-spin interactions, and the critical fixed point is found at K₁=0.5769, K₂=-0.0671, and K₃=0.3428, which determines the critical temperature of the system. It is also found that this system and the regular square Ising lattice, and the eight-vertex model belong to the same universality class.     

MgxZn1-xO结构性质

采用第一性原理计算模拟了不同组分的Mg_xZn_1-xO半导体混晶的晶格常数、总能、结构,以及禁带宽度的变化。计算结果显示,随着Mg组分的增加,晶格常数逐渐减小,晶体逐渐偏离纤锌矿结构。对各种不同的Mg原子排列情况进行比较认为,Mg_xZn_1-xO的结构随组分x的增大,发生从纤锌矿到岩盐矿的结构相变的可能性高于发生相分离。另一方面,禁带宽度随组分增大主要由价带顶的移动所致。进一步分析Mg原子各种电子态对价带的影响表明,Mg对价带顶附近能带的贡献依次来自p、d、s态电子。随着组分x的增加,p态电子在价带顶附近的密度明显提高,说明sp轨道杂化不但对晶体的几何结构产生影响,而且对其电子结构也起重要作用。     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

光诱导准一维光子晶格中离散空间光孤子的相互作用

基于分步束传播法数值分析了离散空间光孤子在准一维光诱 导光子晶格中的相干与非相干相互作用过程. 结果表明: 对于相干孤子, 同相时相互吸引, 反相时相互排斥. 然而, 由于非线性响应的各向异性, 横向排布的非相干孤子会因间隔波导数目的增加而由相互吸引变为相互排斥. 并且, 沿对角方向排布的两个非相干孤子在孤子相 互作用力和布拉格反射的共同影响下, 会呈现出"钟摆式"振荡传输现象. 研究结果有助于进一步理解非线性各向异性对离散孤子相互作用的影响机制, 并为后续实验研究提供理论参考.     

有横向耦合的束流系统的匹配问题

分析了不同起始情况的束流通过有横向耦合的束流系统后发射度的变化，给出了束流有效发射度的边界方程式及匹配条件．