InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates

We studied the formation of InAs islands in holes defined by electron-beam lithography on GaAs substrates. The islands grew selectively in the holes, with one to nine islands per hole. The number of islands depends simply on the hole diameter, filling the holes at a constant effective two-dimensional density. We define the ratio of this effective density to the density on an unpatterned control sample to be the selectivity ratio, and we find a selectivity ratio of greater than 1000 for the present samples. We estimated the lateral conduction-band coupling for closely spaced islands and conclude them to be plausible candidates for weakly coupled device building blocks.     

A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R_on,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R_on,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R_on,sp are investigated, and the optimized results with BV of 83 V and R_on,sp of 54 mOmega cdotmm² are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “R_on,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of R_on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R_on,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.     

The influence of annealing temperature on the morphology of graphene islands

We report on temperature-programmed growth of graphene islands on Ru(0001) at annealing temperatures of 700°C,800°C,and 900°C.The sizes of the islands each show a nonlinear increase with the annealing temperature.In 700°C and 800°C annealings,the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate,which is in accordance with the etching growth mode.In 900°C annealing,the islands are much larger and of lower quality,which represents the early stage of Smoluchowski ripening.A longer time annealing at 900°C brings the islands to final equilibrium with an ordered moir’e pattern.Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.     

银原子团簇在带电硅油基底表面的扩散行为

研究了银原子团簇在均匀带电硅油基底表面扩散的动力学过程.数值求解结果表明:在液体基底中心区域,电场强度大小近似与矢径r值成正比,方向与矢径r相反.在该电场的作用下,带电银原子团簇的径向速度随矢径r近似线性增加,从而求得团簇数密度随时间呈指数规律衰减,所得结果与实验事实相符.通过计算还发现银原子团簇直径在10-6m数量级范围内,其中的银原子对电子的亲和能不随团簇直径的变化而变化.     

The physical origin of the land–ocean contrast in lightning activity

New tests and older ideas are explored to understand the origin of the pronounced contrast in lightning between land and sea. The behavior of islands as miniature continents with variable area supports the traditional thermal hypothesis over the aerosol hypothesis for lightning control. The substantial land–ocean contrast in updraft strength is supported globally by TRMM (Tropical Rainfall Measuring Mission) radar comparisons of mixed phase radar reflectivity. The land–ocean updraft contrast is grossly inconsistent with the land–ocean contrast in CAPE (Convective Available Potential Energy), from the standpoint of parcel theory. This inconsistency is resolved by the scaling of buoyant parcel size with cloud base height, as suggested by earlier investigators. Strongly electrified continental convection is then favored by a larger surface Bowen ratio, and by larger, more strongly buoyant boundary layer parcels which more efficiently transform CAPE to kinetic energy of the updraft in the moist stage of conditional instability. To cite this article: E. Williams, S. Stanfill, C. R. Physique 3 (2002) 1277–1292.     

基于HMM的CpG岛位置判别

隐马尔科夫过程是20世纪70年代提出来的一种统计方法,以前主要用于语音识别,1989年Churchill将其引入计算生物学,目前HMM是生物信息学中应用比较广泛的统计方法。本文对马尔科夫过程和HMM进行了简明扼要的描述,并对其在CpG岛位置判别中的应用做了概括介绍。     

Island formation during Al deposition on 5-fold Al-Cu-Fe quasicrystalline surfaces: Kinetic Monte Carlo simulation of a disordered-bond-network lattice-gas model

Scanning tunneling microscopy experiments have previously revealed the formation of pseudomorphic starfish-shaped islands during the initial stages of Al deposition on 5-fold icosohedral Al-Cu-Fe quasicrystal surfaces. To simulate this process, we first identify appropriate 5-fold surface terminations of Al-Cu-Fe from a model for bulk structure, and construct associated potential energy surfaces for the binding of Al adatoms on these terminations. We then identify a ‘disordered-bond-network’ (DBN) connecting neighboring local adsorption sites for Al on Al-Cu-Fe, and determine site binding energies as well as activation barriers for Al adatom hopping between neighboring sites. Al-Al adsorbate interactions, which stabilize islands, are also prescribed. Then, within the framework of a DBN lattice-gas model, we simulate the deposition and diffusion of Al on Al-Cu-Fe. We explore the competition between starfish and incomplete starfish ensembles of sites (which provide traps in the form of deep potential energy wells for diffusing Al) and isolated trap sites, with regard to the heterogeneous nucleation and aggregation of Al into islands.     

Dynamics of Adsorbate Islands with Nanoscale Resolution

Surface catalytic processes produce, under certain conditions, small clusters of adsorbed atoms or groups, called islands which, after they have been formed, move as individual entities. Here we consider the catalytic reduction of NO with hydrogen on platinum. (i) Using video field ion microscopy, we observe the dynamic motion of small hydroxyl islands on the Pt(001) plane; despite changes in their morphology, the islands dimensions are confined to values corresponding to 10 to 30 Pt atoms suggesting cooperative effects to be in operation. (ii) We construct an automaton (or lattice Monte-Carlo) model on the basis of a set of elementary processes governing the microscopic dynamics. The agreement between the simulation results and the experimental observations suggests a possible mechanism for the formation and dynamics of hydroxyl islands.     

Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(1 0 0)-(2 × 1) surfaces

Scanning tunneling microscopy (STM) and high resolution cross-sectional transmission electron microscopy (XTEM) studies have been used to investigate the formation of Ge nanocrystals grown on Si(1 0 0)-(2 × 1) surfaces by molecular beam epitaxy (MBE). We observe relatively high density of Ge islands where small ‘pyramids’, small ‘domes’ and facetted ‘domes’ of various sizes co-exist in the film. As revealed from XTEM images, a large fraction of islands, especially dome-shaped Ge islands have been found to have an aspect ratio of ∼1 (diameter):1 (height). Observation of truncated-sphere-shaped Ge islands with a narrow neck contact with the wetting layer is reported.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.