扩散过程对自组织生长量子点密度影响的模拟研究

考虑六方格子衬底上的沉积粒子扩散过程,本文利用Monte Carlo方法对自组织生长岛的面密度进行了研究.模拟得到了岛的生长形貌图,结果表明生长的岛数与扩散步数成反比且存在最大23;岛覆盖率,由岛的覆盖率可估算量子点分布的最大面密度.     

Epitaxy‐like orientation of nanoscale Ag islands grown on air‐oxidized Si(110)‐(5 × 1) surfaces

Growth of Ag islands under ultra‐high vacuum condition on air‐oxidized Si(110)‐(5 × 1) surfaces has been investigated by in situ reflection high energy electron diffraction and ex situ scanning electron microscopy and cross‐sectional transmission electron microscopy. A thin oxide is formed on Si via exposure of the clean Si(110)‐(5 × 1) surface to air. The oxide layer has a short range order. Deposition of Ag at different thicknesses and at different substrate temperatures reveal that the crystalline qualities of the Ag film are almost independent of the thickness of the Ag layer and depend only on the substrate temperature. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher temperatures. For deposition at 550 °C sharp spots in the reflection high energy electron diffraction pattern corresponding to an epitaxial orientation with the underlying Si substrate are observed. The presence of a short range order on the oxidized surface apparently influences the crystallographic orientation of the Ag islands. Copyright © 2011 John Wiley & Sons, Ltd.     

Influences of misfit strains on liquid phase heteroepitaxial growth

Influences of misfit strains with different signs on liquid phase heteroepitaxial growth are studied by binary phase field crystal model. It is amazing to find that double islands are formed because of lateral and vertical separation. The morphological evolution of epitaxial layer depends on signs of misfit strains. The maximum atomic layer thickness of double islands under negative misfit strain is larger than that of under positive misfit strain at the same evolutional time, and size differences between light and dark islands is much smaller under negative misfit strain than that of under positive misfit strain. In addition, concentration field and density field approximately have similar variational law along x direction under the same misfit strain but show opposite variational trend under misfit strains with different signs. Generally, free energy of epitaxial growth systems keeps similar variational trend under misfit strains with different signs.     

Surface strain due to embedded epitaxial islands

We present a simple methodology for the evaluation of strain on the free surface above an embedded island. This work is motivated by the technological importance of self-organization of nanostructures. We first obtain the exact solution of the problem of a particle embedded in a half-space, using continuum theory. Then, we obtain a simple mathematical expression for the strain on the surface. In order to account for the influence of surface energy at the nanoscale, surface and interface stress are considered through the continuum Gurtin formulation. The results are compared with the classical approach, which typically ignores surface stress. This comparison illustrates a very dramatic (even qualitative) difference from the classical elasticity based prediction. It proves that surface stress must be taken into account when islands are small and softer than the substrate material. The procedure illustrated here should be useful to those who need usable expressions for surface strain and have no interest in solving the corresponding boundary value problem.     

托卡马克等离子体中q=2面附近的磁流体驰豫现象

本文在采用一维圆柱输运模型来摸拟托卡马克等离子体欧姆加热时,考虑了杂质辐射与磁岛演变的耦合作用。我们发现,在一定参数条件下,m/n=2/1的磁岛宽度及相应于q=2面附近的电子温度会产生驰豫振荡。本文主要讨论了出现这种驰豫现象的原因及其对增强托卡马克约束的意义。     

Electrical characterisation of local electronic properties of self-assembled semiconductor nanostructures using AFM

Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) have been used to characterise self-assembled Ge nanoislands embedded in silicon. High contrast in capacitance and in surface potential are found between areas with nanostructures and areas without any nanostructures. The local dC/dV spectroscopy shows flat band voltage shift attributed to the presence of electric charges in the nanostructures. The KPFM contrast has been correlated with the band structure offsets between the nanostructure and the matrix barrier. Effects of the charging have been measured from the dC/dV curve and discussed in terms of the wetting layer influence that contributes to the escape of the charges when percolation of charges is observed.     

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated.     

岛礁海域海洋环境噪声垂直分布和垂直指向性

依据岛礁海域复杂海底地形、海试期间航船分布和实测风速数据,应用射线声传播理论,建立岛礁海域海洋环境噪声三维模型。在海试岛礁海域深海声道条件下,采用射线3D算法,仿真计算了32元垂直测量阵所处265~885 m负声速梯度深度范围内1 kHz风关和50 Hz远处航船海洋环境噪声级垂直分布,以及50 Hz航船海洋环境噪声垂直指向性,并与实测分析进行比较。结果表明,仿真结果与海试实测数据一致性良好。在本例海底起伏、接收点周边存在众多岛礁和海底山的三维环境中,1 kHz风关海洋环境噪声级随深度分布较近于均匀;西南方向较远处航道区海域海底较平坦,航道区至接收阵为缓斜坡海底,50 Hz远处航船海洋环境噪声级随深度有所增加,其噪声垂直指向性无明显水平凹槽。文中建立的岛礁海域海洋环境噪声三维模型,可较好地表征本例岛礁复杂地形海底起伏海域的风关和航船海洋环境噪声级的垂直分布、及航船环境噪声的垂直指向性,实测和仿真的岛礁海域海洋环境噪声相关数据,可供实际应用及相关研究参考。     

Certain aspects of regularity in scalar field cosmological dynamics

We consider dynamics of the FRW Universe with a scalar field. Using Maupertuis principle we find a curvature of geodesics flow and show that zones of positive curvature exist for all considered types of scalar field potential. Usually, phase space of systems with the positive curvature contains islands of regular motion. We find these islands numerically for shallow scalar field potentials. It is shown also that beyond the physical domain the islands of regularity exist for quadratic potentials as well.